180V DC DRIVER MOTOR CONTROL MOSFET Search Results

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

DD141S0-056

Abstract: Automatic postioning controller in a computer display RJ45 datasheet 8P8C RS232 encoder diagram 512 hall 8P8C RJ45 ADuM1201 Plug-1007-01-R Minifit Jr. Minifit Jr. derating
Contextual Info: ION Digital Drive User’s Manual Performance Motion Devices, Inc. 55 Old Bedford Road Lincoln, MA 01773 Revision 1.5 December2009 NOTICE This document contains proprietary and confidential information of Performance Motion Devices, Inc., and is protected by federal copyright law. The contents of this document may not be disclosed to third parties, translated, copied,

mosfet cross reference

Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
Contextual Info: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is

180v dc driver motor control mosfet

Abstract: power amplifier for sonar driver 180v dc motor schematic sonar transformer transducer
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power amplifier for sonar

Abstract: 180v dc driver motor control mosfet EK04 sonar transformer transducer
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Contextual Info: FQB3N90 / FQI3N90 September 2000 QFET TM FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

FQB5N90TM

Contextual Info: FQB5N90 / FQI5N90 September 2000 QFET TM FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB5N90 / FQI5N90 September 2000 QFET TM FQB5N90 / FQI5N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQB2NA90 / FQI2NA90 September 2000 QFET TM FQB2NA90 / FQI2NA90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: FQB3N90 / FQI3N90 September 2000 QFET TM FQB3N90 / FQI3N90 900V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

TRANSISTOR MOTOROLA MAC 223

Abstract: MRF9282 MRF1510 triac MAC 97 AB MSB81T1 solid state 220 volt stabilizer circuit MHW8272 MRF9242 10 amp igbt 1000 volt 100 amp 1200 volt Triac
Contextual Info: NEW PRODUCT CALENDAR and KEY FOCUS PRODUCTS 3Q96 CALCPSTG/D REV 8 This quarterly folder includes information on products by the Communications, Power and Signal Technologies Group CPSTG , which comprises four organizations. These organizations are the RF Semiconductor Division, specializing in low power and high power discrete transistors, hybrid circuits for power amplifiers (modules),

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Contextual Info: PA04 • PA04A APEX MICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 8 0 0 546-APE X 8 0 0 - 5 4 6 - 2 7 3 9 FEATURES • HIGH INTERNAL DISSIPATION — 200 WATTS • HIGH VOLTAGE, HIGH CURRENT — 200V, 20A • HIGH SLEW RATE — 50V/nS • 4 WIRE CURRENT LIMIT SENSING

sonar seminar

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ncl 058

Abstract: ampli mosfet SCHEMATIC 200w power
Contextual Info: \ POW ER OPERATIONAL AM PLIFIERS ji n e y S u m . PA04 • PA04A h t t p ://WWW.APEXMICROTECH.COM 800 546-APEX (800) 5 4 6 - 2 7 39 FEATURES • • • • • • • • HIGH INTERNAL DISSIPATION — 200 WATTS HIGH VOLTAGE, HIGH CURRENT — 200V, 20A

SONAR 850 alarm

Abstract: PA17 850W
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Contextual Info: POW ER O PER A TIO NA L A M PLIFIE R S t - i'V ; . - •! - j i h h ' A a ; APEX IVIICROTECHNOLOGY CORPORATION • APPLICATIONS HOTLINE 8 00 546-APEX 800-546-2739 FEATURES • • • • • • • • Ï HIGH INTERNAL DISSIPATION — 20 0 WATTS HIGH VOLTAGE, HIGH CURRENT — 200V, 20A

power amplifier for sonar

Abstract: Audio Power Amplifier 400W library boost for C RS COMPONENTS AMPLIFIER KITS amplifier 400W 200w audio power amplifier 400w audio amplifier APEX MICROTECHNOLOGY pa04 PA04 AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
Contextual Info: 108&3
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".1-*'*&3 PA04 • PA04A 551888"1&9.*$305&$)$0.



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 M I C R O T E C H N O L O G Y FEATURES • HIGH INTERNAL DISSIPATION — 200 Watts • HIGH VOLTAGE, HIGH CURRENT — 200V, 20A • HIGH SLEW RATE — 50V/µs

Ultrasonic Transducer application notes

Abstract: sonar transformer transducer
Contextual Info: POWER OPERATIONAL AMPLIFIERS PA04 • PA04A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • • • PA04 HIGH INTERNAL DISSIPATION — 200 WATTS HIGH VOLTAGE, HIGH CURRENT — 200V, 20A

ultrasonic transducer driver circuits

Abstract: PA04 ultrasonic transducer excitation circuit ultrasonic transducer "40 kHz" "200 kHz" impedance APEX MICROTECHNOLOGY pa04 EK04 MO-127 PA04A ultrasonic transducer 150 khz ultrasonic transducer drive circuits
Contextual Info: POWER OPERATIONAL AMPLIFIERS PA04 • PA04A HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • • • PA04 HIGH INTERNAL DISSIPATION — 200 WATTS HIGH VOLTAGE, HIGH CURRENT — 200V, 20A

hitachi mosfet power amplifier audio application

Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3

ultrasonic transducer excitation circuit

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APEX MICROTECHNOLOGY pa04

Contextual Info: PA04PA04 • PA04A • PA04A PA04, PA04A Power Operational Amplifier FEATURES • • • • • • • • HIGH INTERNAL DISSIPATION — 200 WATTS HIGH VOLTAGE, HIGH CURRENT — 200V, 20A HIGH SLEW RATE — 50V/µS 4 WIRE CURRENT LIMIT SENSING LOW DISTORTION