18-LEAD D-6 PACKAGE Search Results

80041

Abstract: MIL-STD-1835 40 PIN CERDIP cerdip D16 PACKAGE DIAGRAM 80046 CERDIP 52 D2 Package diagram D22 PACKAGE DIAGRAM D50 transistor
Contextual Info: Package Diagram Ceramic Dual-In-Line Packages 16-Lead 300-Mil CerDIP D2 MIL-STD-1835 D-2 Config. A 51-80027 18-Lead (300-Mil) CerDIP D4 MIL-STD-1835 D-6 Config. A 51-80028 1 Package Diagram 20-Lead (300-Mil) CerDIP D6 MIL-STD-1835 D-8 Config. A 51-80029

MIL-STD-1835

Abstract: D22 PACKAGE DIAGRAM 40 PIN CERDIP D2 Package diagram D2 Package MIL-STD d 1835 D5011 cerdip cerdip 16 lead
Contextual Info: Package Diagram Ceramic Dual-In-Line Packages 16-Lead 300-Mil CerDIP D2 MIL-STD-1835 D-2 Config. A 18-Lead (300-Mil) CerDIP D4 MIL-STD-1835 D-6 Config. A 1 Package Diagram 20-Lead (300-Mil) CerDIP D6 MIL-STD-1835 D-8 Config. A 22–Lead (400–Mil) CerDIP D8

MIL-STD-1835

Abstract: sidebraze
Contextual Info: Package Diagrams Ceramic Dual-In-Line Packages 16-Lead 300-Mil CerDIP D2 MIL-STD-1835 D-2 Config. A 51-80027 18-Lead (300-Mil) CerDIP D4 MIL-STD-1835 D-6 Config. A 51-80028 1 Package Diagrams 20-Lead (300-Mil) CerDIP D6 MIL-STD-1835 D-8 Config. A 51-80029

GDIP1-T18

Abstract: EA MARK 18-LEAD D-6 PACKAGE
Contextual Info: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Frit Seal Packages CERDIP F18.3 MIL-STD-1835 GDIP1-T18 (D-6, CONFIGURATION A) LEAD FINISH c1 18 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE -D- -A- BASE METAL E M -Bbbb S C A-B S -C- S1 0.200

package tsop1

Abstract: 16G nand AG01000 NCE 6G memory 4g onenand
Contextual Info: One-NAND Code Information 1/2 Last Updated : August 2009 KFXXXXXXXX - XXXXXXX 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 12. Package (AG01000 PKG SPEC Reference) A : FBGA (Lead-Free, Halogen-Free) B : FBGA (Lead-Free, Halogen-Free, OSP) D : FBGA (Lead-Free)

Contextual Info: a FEATURES 18 MSPS Correlated Double Sampler CDS 6 dB to 40 dB 10-Bit Variable Gain Amplifier (VGA) Low Noise Clamp Circuits Preblanking Function 10-Bit 18 MSPS A/D Converter 3-Wire Serial Digital Interface 3 V Single Supply Operation Low Power CMOS 48-Lead LQFP Package

image processing asic

Abstract: linear CCD 512 AD9803 AD9804 AD9804JST
Contextual Info: a FEATURES 18 MSPS Correlated Double Sampler CDS 6 dB to 40 dB 10-Bit Variable Gain Amplifier (VGA) Low Noise Clamp Circuits Preblanking Function 10-Bit 18 MSPS A/D Converter 3-Wire Serial Digital Interface 3 V Single Supply Operation Low Power CMOS 48-Lead LQFP Package

Contextual Info: GaAs 1C SPDT Switch Reflective DC-18 GHz ESAlpha AS018R2-65 Features •65 ■ Broadband D C -18 GHz 0 .3 8 8 9 .8 6 m m 0 0 .0 7 0 (1 .7 8 m m 0 .1 1 5 (2 .9 2 m m ) ■ Reflective, Short ± 0.002 ■ 5 Lead Hermetic Package in IS^$ KOVAR 0 .1 6 4 (4 .1 6 m m ) {

Contextual Info: CMOS DUAL SyncFlFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1024x18 d ty IDT72805LB IDT72815LB IDT72825LB Integrated Device Technology, Inc. • Enable puts output data bus in high impedance state • High-performance submicron CMOS technology • Available in a 121-lead, 1 6 x 1 6 mm plastic Ball Grid

CDIP2-T18

Abstract: 2N18 18-LEAD D-6 PACKAGE
Contextual Info: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Metal Seal Packages SBDIP D18.3 MIL-STD-1835 CDIP2-T18 (D-6, CONFIGURATION C) LEAD FINISH c1 -A- 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S SECTION A-A

MOSFET IRF 380

Abstract: MOSFET IRF 940 MOSFET IRF 635 P916A irf 064 IRF 064 N A546 "MOSFET A5 a5 marking
Contextual Info: PD - 95019 SMPS MOSFET • IRFR3707PbF IRFU3707PbF Lead-Free www.irf.com 1 2/18/04 IRFR/U3707PbF 2 www.irf.com IRFR/U3707PbF www.irf.com 3 IRFR/U3707PbF 4 www.irf.com IRFR/U3707PbF www.irf.com 5 IRFR/U3707PbF 6 www.irf.com IRFR/U3707PbF D-Pak TO-252AA Package Outline

CA3300CE

Abstract: rca ca3300 CA3300 zener diode 1N PH 48 CA3300D CA3306 RCA Solid State CA3300DX CA3300E LS 1316
Contextual Info: Solid IMS/I State / / _ CJ 002258 ¡5 ^ ¿ 7 C- y ' • CA3300 Types RES. Linear Integrated Circuits 18-Lead D ual-ln-Llne Side-Brazed Ceramic Package D Suffix CMOS Video Speed 6-Bit Flash Analog-to-Digital Converter For Use in Low -Pow er C onsum ption, High-Speed

Contextual Info: GaAs 1C SPDT Switch Non-Reflective DC-18 GHz ESAlpha AS018M2-65 Features •65 ■ Broadband D C -18 GHz 0 .3 8 8 9 .8 6 m m 0 0 .0 7 0 (1 .7 8 m m 0 .1 1 5 (2 .9 2 m m ) ■ High Isolation, Non-Reflective ± 0.002 ■ 5 Lead Hermetic Package in IS^$ KOVAR

Contextual Info: TS2012 Filter-free stereo 2x2.8W class D audio power amplifer Features Four gains select : 6, 12, 18, 24 dB • Low current consumption ■ PSRR: 70dB typ @ 217Hz with 6dB gain. ■ Fast start-up phase: 1ms ■ Thermal shutdown protection ■ QFN20 4x4mm lead-free package

27BSC

Abstract: marking 62m
Contextual Info: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)

StR 40000

Abstract: com8116 74385 COM8136 T-7-T-33-0 H 528 ir receiver 8116 AY-5-8136 16x baud rate oscillator
Contextual Info: MICROCHIP TECHNOLOGY INC 22E D • blG32Gl 000415=1 a T ' 7 S - 3 ? 'Q i A Y 5 8 1 1 6 / 8 1 1 6 T 8 1 3 6 T Z Microchip A Y 5 8 1 3 6 / Dual Baud Rate Generator FEATURES PIN CONFIGURATIONS 18 LEAD DUAL INLINE • Single +5V power supply • On-chip crystal oscillator 8116/8136 or external

MO-047AC

Abstract: QFJ44-P-S650-1
Contextual Info: 44P0 Plastic 44pin QFJ EIAJ Package Code QFJ44-P-S650-1.27 Weight g 2.11 Lead Material Alloy 42 e1 D e JEDEC Code MO-047AC D 1 44 L b2 6 e1 E HD 40 7 39 I1 I2 e1 E E Symbol 29 17 18 28 A1 A b1 c HE Recommended Mount Pad b e e1 D y A A1 b b1 c D E e e1D e1E

Contextual Info: SbE D • BDB Qb D1! DDD1D31 74b H V C T V T B 1 0121, 10131 VTB Process Photodiodes E 6 & G VACTEC PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 18 TO-46 HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) S m all area planar silicon photodiode in a 'fla t' w indow , dual lead T O -4 6 pack­

Contextual Info: Package Number 211 - 16-Lead SOIC, .300 Wide H3>|.01 0 . 2 5 | B 1 D E T A IL 1 8 r - p [ ~ - > .0 1 0 ( . 2 5 ) © DIM INCHES MIN. MILLIMETERS MAX. MIN. MAX. A .0 9 2 6 .1043 2.35 2 .6 5 A1 .004 0.1 0 B .013 .01 18 .020 0.33 0 .3 0 0.51 0.23 0 .3 2

Contextual Info: D Package 20-Lead Side Brazed Hermetic (Reference LTC DWG # 05-08-1210) 1.010 (25.654) MAX .005 (0.127) MIN 20 19 18 17 16 15 14 13 12 11 .290 (7.366) TYP PIN NO. 1 IDENT 1 2 3 4 5 6 7 8 .485 (12.319) MAX .020 – .060 (0.508 – 1.524) 9 10 .165 (4.191)

Contextual Info: MN103SK7 Series MN103SK7N Type MN103SK7R Mask ROM Internal ROM type ROM byte 512K 1024K RAM (byte) 32K 40K Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error

Contextual Info: P a ckag e Number 219 - 18-LEAD SOIC <=>! i |- $ - |.Q 1 D . 2 5 | B 1 DE T A IL BASE PLAN E V SEATING PLANE Q g > .0 1 0 ( . 2 5 ) © DIM INCHES MIN. MILLIMETERS MAX. MIN. MAX. A .0 9 2 6 .1 0 4 3 2 .3 5 2 .6 5 A1 .0 0 4 .01 1 8 0.1 0 0 .3 0 B .0 1 3

mn103sd

Abstract: 76-P-16 UBGA257-P-1111A
Contextual Info: MN103SD0 Series MN103SD0Q MN103SFD0R Mask ROM FLASH ROM byte 768K 1024K RAM (byte) 32K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error

Contextual Info: MN103SD0 Series MN103SD0Q MN103SFD0R Mask ROM FLASH ROM byte 768K 1024K RAM (byte) 32K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error