|
18VRGT324K254NA3
|
|
CTS
|
POT 250K OHM 1/20W LOGARITHMIC |
Original |
PDF
|
912.79KB |
|
|
18VRGT324K504NA3
|
|
CTS
|
POT 500K OHM 1/20W LOGARITHMIC |
Original |
PDF
|
912.79KB |
|
|
18VRGT324S254NA3
|
|
CTS
|
POT 250K OHM 1/20W LOGARITHMIC |
Original |
PDF
|
912.79KB |
|
|
18VRGT324S504NA3
|
|
CTS
|
POT 500K OHM 1/20W LOGARITHMIC |
Original |
PDF
|
912.79KB |
|
|
18VRGT732K304NB1
|
|
CTS
|
POT 300K OHM 1/10W LINEAR |
Original |
PDF
|
912.79KB |
|
|
18VRGT732K504NA3
|
|
CTS
|
POT 500K OHM 1/20W LOGARITHMIC |
Original |
PDF
|
912.79KB |
|
|
18VRGT732S304NB1
|
|
CTS
|
POT 300K OHM 1/10W LINEAR |
Original |
PDF
|
912.79KB |
|
|
18VRGT732S504NA3
|
|
CTS
|
POT 500K OHM 1/20W LOGARITHMIC |
Original |
PDF
|
912.79KB |
|
18V SOD
|
|
AK Semiconductor
|
Silicon planar Zener diodes in SOD-123 package with 500mW power dissipation, 1.8V to 75V reverse voltage range, approximately ±5% tolerance, lead-free, surface mountable, and operating temperature from -55°C to +150°C. |
Original |
PDF
|
|
|
|
CESD1006UC18VBS
|
|
CREATEK Microelectronics
|
Bidirectional ESD protection diode in DFN1006 package with 32W peak pulse power, 18V reverse stand-off voltage, low clamping voltage, 0.5pF typical junction capacitance, and compliance with IEC 61000-4-2, IEC 61000-4-4, and IEC 61000-4-5 standards. |
Original |
PDF
|
|
|
|
CESDP0201UC18VB
|
|
CREATEK Microelectronics
|
Ultra low capacitance ESD protection diode in 0201 package, rated voltage 18V, junction capacitance 0.05pF typical, clamping voltage 35V, leakage current 0.1uA, supports IEC61000-4-2 ±30kV contact and air discharge for high frequency signal line protection. |
Original |
PDF
|
|
|
|
MMBZ18VAL
|
|
Microdiode Semiconductor (MDD)
|
SOT-23, UL 94V-0, 3V-22V, 5.6V-27V, 260°C/10s, 24W @ 1.0ms, ESD >16kV, >400V, ±30kV, <5.0uA, tape/reel, 3,000pcs. |
Original |
PDF
|
|
|
|
ESDBW18VD3
|
|
JCET Group
|
Bidirectional ESD protection diode in SOD-323 package with 18V reverse standoff voltage, low capacitance of 24pF, fast response time, and 42V clamping voltage at 9A, designed for transient protection in high-speed interfaces. |
Original |
PDF
|
|
|
|
ESDBL18VD3
|
|
JCET Group
|
Bidirectional ESD protection diode in SOD-323 package with 18 V reverse standoff voltage, low capacitance of 13 pF, clamping voltage of 25.2 V at 5 A, and IEC 61000-4-2 Level 4 compliance for robust transient protection. |
Original |
PDF
|
|
|
|
|
|
MMBZ18VA
|
|
Shikues Semiconductor
|
|
Original |
PDF
|
|
|
|
CESDP0402UC18VB
|
|
CREATEK Microelectronics
|
Ultra-low capacitance ESD protection diode in 0402 package, rated voltage 18V, junction capacitance 0.05pF typical, leakage current 0.1uA, clamping voltage 35V, supports IEC61000-4-2 ±30kV contact and air discharge for high-frequency signal line protection. |
Original |
PDF
|
|
|
|
ESDBU18VA1
|
|
JCET Group
|
ESDBU18VA1 is a bidirectional ESD protection diode in a DFNWB1006-2L package, featuring 0.35 pF capacitance, 18 V reverse standoff voltage, 12 V clamping voltage at 4 A, and compliance with IEC 61000-4-2 Level 3 and JESD22-A114-B Class 3B standards. |
Original |
PDF
|
|
|
|
1.8V SOD
|
|
AK Semiconductor
|
Silicon Planar Zener Diodes in SOD-123 package, MMSZ4678W through MMSZ4717W series, with power dissipation up to 500mW, zener voltage range from 1.8V to 75V, ±5% tolerance, and operating temperature from -55°C to +150°C. |
Original |
PDF
|
|
|
|
CESD1006NC18VB
|
|
CREATEK Microelectronics
|
Bidirectional ESD protection diode in DFN1006 package with 220W peak pulse power, 18V reverse stand-off voltage, 15pF typical junction capacitance, and compliance with IEC 61000-4-2, IEC 61000-4-4, and IEC 61000-4-5 standards. |
Original |
PDF
|
|
|
|
GD32E518VET6
|
|
GigaDevice Semiconductor (Beijing) Inc
|
32-bit MCU, Cortex-M33, 180 MHz, 512 KB Flash, 128 KB SRAM, 3 ADCs, 3 DACs, multiple timers, comm interfaces, 1.71-3.63 V, -40 to +85 °C. |
Original |
PDF
|
|
|
18V SOD
