17SEP03 Search Results

Contextual Info: 6N138/ 6N139 VISHAY Vishay Semiconductors Low Input Current, High Gain Optocoupler Features • • • • • • • • High Current Transfer Ratio, 300 % Low Input Current, 0.5 mA High Output Current, 60 mA Isolation Test Voltage, 5300 VRMS TTL Compatible Output, VOL = 0.1 V

M40Z300

Abstract: M48Z128 M48Z128V M48Z128Y SOH28
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

THE M48Z

Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE

Contextual Info: ILD610 VISHAY Vishay Semiconductors Dual Phototransistor Optocoupler Features • • • • Dual Version of SFH610 Series Isolation Test Voltage, 5300 VRMS VCEsat 0.25 ≤ 0.4 V at IF = 10 mA, IC = 2.5 mA VCEO = 70 V Agency Approvals • • • • UL File #E52744 System Code H or J

Contextual Info: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Contextual Info: BAR63V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

Si6993DQ

Abstract: Si6993DQ SPICE Device Model
Contextual Info: SPICE Device Model Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

69478-1

Abstract: spec rg 188 cable
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT E 3 1 2 RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. 0 ELECTRONICS CORPORATION. REVISIO NS AJ -DESCRIPTION-REV PER EC 0S1 4 - 0 1 4 6 - 0 3 R G - 5 8 /U , A /tk /fk 7.

Contextual Info: BAR64V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be

Contextual Info: BAR63V-05W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

M48Z512A

Abstract: M48Z512AV M48Z512AY M4Z32-BR00SH1 SOH28 M48Z51
Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of

Contextual Info: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE

M40Z300

Abstract: M48Z128 M48Z128V M48Z128Y D 4242 CP1621
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES

Contextual Info: SFH6650 VISHAY Vishay Semiconductors 0.5 A Output Current IGBT & MOSFET Driver Features • 0.5 A Minimum Peak Output Current • 20 kV/µs Minimum Common Mode Rejection CMR at Vcm = 1500 V • 1.0 V Maximum Low Level Output Voltage (VOL) Eliminates Need for Negative Gate Drive

Contextual Info: BAR63V-06W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Anode in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-06W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than

BAV21-TR

Abstract: BAV17 BAV17-TAP BAV17-TR BAV18 BAV19 BAV20 BAV21 BAV17-BAV21
Contextual Info: BAV17.BAV21 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data Case: DO-35 Glass Case Weight: approx. 300 mg Packaging Codes/Options: D7/10 K per 13" reel 52 mm tape , 20 K/box

Contextual Info: UG8AT-DT, UGF8AT-DT, UGB8AT-DT Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 50 to 200 V Forward Current 8.0 A Reverse Recovery Time 20 ns ITO-220AC UGF8AT-DT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72)

BYV29F

Abstract: UGF8 BYV29 BYV29-300 BYV29-400 BYV29B
Contextual Info: BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 300 to 400V Forward Current 8.0A Reverse Recovery Time 35ns ITO-220AC BYV29F, UGF8 Series 0.188 (4.77) 0.172 (4.36)

Contextual Info: BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 300 to 400V Forward Current 8.0A Reverse Recovery Time 35ns ITO-220AC BYV29F, UGF8 Series 0.188 (4.77) 0.172 (4.36)

Contextual Info: UG8AT-DT, UGF8AT-DT, UGB8AT-DT Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 50 to 200 V Forward Current 8.0 A Reverse Recovery Time 20 ns ITO-220AC UGF8AT-DT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72)

BA892V-04W

Abstract: BA892V-04W-GS08
Contextual Info: BA892V-04W VISHAY Vishay Semiconductors Band Switching Diodes - Dual, Series in SOT-323 Description The main purpose of the BA892V-04W is the Band Switching. Biased with a DC forward current for signals at frequencies over 100 MHz up to 3 GHz this diode behaves like a current controlled resistor and

M40Z300

Abstract: M48Z512A M48Z512AV M48Z512AY
Contextual Info: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

M48Z128

Abstract: M48Z128V M48Z128Y M40Z300
Contextual Info: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE

Contextual Info: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE