17JUN11 Search Results
17JUN11 Datasheets Context Search
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Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT N /A By - RELEASED FOR PUBLICATION 6 5 4 3 2 - ,N /A . LOC ALL RIGHTS RESERVED. REVISIONS DIST DF AO P LTR H DESCRIPTION DATE DWN PY DE 17JUN11 REV PER ECO-1 1-01 1376 APVD D D C C B B SEE MAT' L: A ALUMINUM ALLOY 6061-T4 UR T6, |
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17JUN11 6061-T4 MIL-C-5541 | |
Contextual Info: VS-100BGQ030 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 150 °C max. operating junction temperature High frequency operation Ultralow forward voltage drop Continuous high current operation |
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VS-100BGQ030 JEDEC-JESD47 2002/95/EC VS-100BGQ030 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VS-85EPF12 Soft Recovery Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 85 A FEATURES • 150 °C max. operating junction temperature Cathode Anode • Output rectification and freewheeling inverters, choppers and converters |
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VS-85EPF12 JEDEC-JESD47 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VS-100BGQ045 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode • Ultralow forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long |
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VS-100BGQ045 JEDEC-JESD47 2002/95/EC VS-100BGQ045 11-Mar-11 | |
Contextual Info: VS-85EPF12 Soft Recovery Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 85 A FEATURES • 150 °C max. operating junction temperature Cathode Anode • Output rectification and freewheeling inverters, choppers and converters |
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VS-85EPF12 JEDEC-JESD47 2002/95/EC 11-Mar-11 | |
VS-85E
Abstract: Vishay TO-247AC Package VS-85EPF12
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VS-85EPF12 JEDEC-JESD47 2002/95/EC 11-Mar-11 VS-85E Vishay TO-247AC Package | |
GC 72 smd diodeContextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses |
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50MT060ULSTAPbF E78996 2002/95/EC 11-Mar-11 GC 72 smd diode | |
Contextual Info: VS-175BGQ045 www.vishay.com Vishay Semiconductors Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode Anode • Ultralow forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long |
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VS-175BGQ045 JEDEC-JESD47 2002/95/EC VS-175BGQ045 11-Mar-11 | |
Contextual Info: VS-100BGQ100 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 175 °C max. operating junction temperature High frequency operation Low forward voltage drop Continuous high current operation |
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VS-100BGQ100 JEDEC-JESD47 2002/95/EC VS-100BGQ100 11-Mar-11 | |
Contextual Info: VS-100BGQ100 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 175 °C max. operating junction temperature High frequency operation Low forward voltage drop Continuous high current operation |
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VS-100BGQ100 JEDEC-JESD47 2002/95/EC VS-100BGQ100 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 1693 MHz 15.0 VDC 1850 Tuning Voltage: MHz 0.5 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: -6.0 -4.0 -2.0 dBm 15 25 mA Harmonic Suppression 2 Harmonic : |
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10kHz CVCO55BE-1693-1850 17-Jun-11 | |
Contextual Info: 4 2 TH IS DRAWING IS U N P U B LIS H E D . COPYRIGHT REUEASED FOR PUBUICATION R E V IS IO N S AUU RIGHTS RESERVED. By - LTR MATERIALS: HOUSING: POLYAMIDE, U L 9 4 V - 0 , BLACK. TERMINALS: COPPER ALLOY, TIN PLATED. SCREWS: STEEL, ZINC PLATED. F2 D ESC R IPTIO N |
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17JUN11 PA664-4 | |
Contextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses |
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50MT060ULSTAPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: 150 CRZ www.vishay.com Vishay BCcomponents Aluminum Capacitors SMD Chip , Very Low Z FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing • SMD-version with base plate, lead (Pb)-free reflow solderable • Very low impedance, very high ripple current |
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J-STD-020 2002/95/EC AEC-Q200 MAL215099. 11-Mar-11 | |
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Contextual Info: Preliminary ESH2PB, ESH2PC, ESH2PD www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series • Ideal for automated placement • Glass passivated chip junction |
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J-STD-020, DO-220AA AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 | |
Contextual Info: VS-100BGQ030 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 150 °C max. operating junction temperature High frequency operation Ultralow forward voltage drop Continuous high current operation |
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VS-100BGQ030 JEDEC-JESD47 2002/95/EC VS-100BGQ030 11-Mar-11 | |
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Capacitors - SMD Aluminum, 105 ºC, Low Impedance I INNOVAT AND TEC O L OGY 150 CRZ N HN VISHAY BCcomponents O 19 62-2012 150 CRZ SMD Aluminum Capacitors, Low Impedance Key Benefits • L ow impedance down to 35 mΩ, high ripple current |
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AEC-Q200 MAL215099 J-STD-020 VMN-PT9180-1304 | |
SSD1803A
Abstract: SSD1803
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SSD1803A SSD1803A 17-Aug-10 17-Jun-11 2002/95/EC SSD1803 | |
Contextual Info: VS-100BGQ045 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode • Ultralow forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long |
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VS-100BGQ045 JEDEC-JESD47 2002/95/EC VS-100BGQ045 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP MAX UNITS 530 MHz 2.8 VDC 5.0 5.25 VDC +3.0 dBm Lower Frequency: Upper Frequency: 600 Tuning Voltage: 0.5 Supply Voltage: 4.75 Output Power: -3.0 Supply Current: MHz 15 nd mA Harmonic Suppression 2 Harmonic : |
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10kHz 100kHz CVCO33CL-0530-0600 17-Jun-11 | |
iec 60068 -2-6Contextual Info: 150 CRZ www.vishay.com Vishay BCcomponents Aluminum Capacitors SMD Chip , Very Low Z FEATURES • Polarized aluminum electrolytic capacitors, non-solid electrolyte, self healing • SMD-version with base plate, lead (Pb)-free reflow solderable • Very low impedance, very high ripple current |
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J-STD-020 2002/95/EC AEC-Q200 MAL215099. 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 iec 60068 -2-6 | |
GC 72 smd diodeContextual Info: 50MT060ULSTAPbF www.vishay.com Vishay Semiconductors "Low Side Chopper" IGBT MTP Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 ultrafast speed IGBT technology • HEXFRED recovery diode with ultrasoft reverse • Very low conduction and switching losses |
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50MT060ULSTAPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 GC 72 smd diode | |
Contextual Info: VS-175BGQ045 www.vishay.com Vishay Semiconductors Schottky Rectifier, 175 A FEATURES • 150 °C max. operating junction temperature • High frequency operation Cathode Anode • Ultralow forward voltage drop • Continuous high current operation • Guard ring for enhanced ruggedness and long |
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VS-175BGQ045 JEDEC-JESD47 2002/95/EC VS-175BGQ045 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: VS-100BGQ030 www.vishay.com Vishay Semiconductors Schottky Rectifier, 100 A FEATURES Cathode • • • • • Anode PowerTab 150 °C max. operating junction temperature High frequency operation Ultralow forward voltage drop Continuous high current operation |
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VS-100BGQ030 JEDEC-JESD47 2002/95/EC VS-100BGQ030 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |