177 TRANSISTOR DATASHEET Search Results

BD175

Contextual Info: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

bd175

Abstract: bd177
Contextual Info: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

Contextual Info: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ‘ Collector Base Voltage : BD176 : BD178 : BD180 Collector Emitter Voltage

BD176

Abstract: transistor bd176
Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

BD178

Abstract: BD176 BD180
Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

bd177

Abstract: BD175
Contextual Info: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175

Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

transistor RJp 30

Abstract: mo-229 pad layout transistor RJp MO-229 MO-220-wgge RJP PRODUCT jedec package MO-220 QFN 20 MO-220 Rjc jedec package MO-220 for qfn JESD51-5
Contextual Info: Product Information Package Thermal Characteristics This document provides test information about the standard packages offered by Allegro MicroSystems. The data given is intended as a general reference only and is based on certain simplifications such as constant chip size and standard

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1

CHY17f-2

Abstract: CHY17F-1 CNY17F-3 CNY17F-2 CHY17 CNY17F3 transistor 2z
Contextual Info: M QUALITY •[TECHNOLOGIES VDE APPROVED ph o to tr a h sisto r o pto c o u pler s CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z d e s c r ip t io n p a c k a g e d im e m s io h s [ft rft The CNY17 series consists o f a Gallium Arsenide IRED coupled w ith an NPN phototransistor.

transistor 91 330

Abstract: Circuit diagram of LDR ldr 10k SM8143 NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16
Contextual Info: SM8143 Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.

transistor 91 330

Abstract: toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143 SM8143A
Contextual Info: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW The SM8143 has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.

sanyo os-con sp

Abstract: sanyo WG capacitors sanyo capacitor wg Nichicon WEEK CODE 10SP470M UPM1C471MPH6 C3225X5R0J107MT diode wg smt sanyo capacitor SE wg UWG1A471MNR1GS
Contextual Info: NEW Product PTHxx010Y DDR Converter Application Note 177 1. Introduction 2 Packaging Labeling and Part Numbering Sequence 2. System Interface Information Input Capacitor Output Capacitance Optional Tantalum Capacitors Ceramic Capacitors Capacitor Table Designing for Very Fast Load Transients

2SB644

Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 2.5±0.1 Parameter Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to

Contextual Info: Product Description SXH-189 Stanford M icrodevices’ SXH-189 am plifier is a high linear GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. The SXH-189 offers significant advantages with higher gain and higher linearity than existing competitive

IGBT IRG4PC50UD

Abstract: IRG4PC50UD
Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1471 IRG4PC50UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

IRG4PC40UD

Contextual Info: Previous Datasheet Index Next Data Sheet PD 9.1467C IRG4PC40UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200

CEP80N75

Abstract: transistor vds rds 12 id 80a to220 ceb80n75 CEF80N75 CEI80N75
Contextual Info: CEP80N75/CEB80N75 CEI80N75/CEF80N75 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEP80N75 75V 13mΩ 80A 10V CEB80N75 75V 13mΩ 80A 10V CEI80N75 75V 13mΩ 80A 10V CEF80N75 75V 13mΩ 80A e 10V D Super high dense cell design for extremely low RDS(ON).

Contextual Info: , LJnc. TELEPHONE: 973 376-2922 (212)227-6005 (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRG4PC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)

Contextual Info: Preliminary Product Description SXH-189 Stanford Microdevices’ SXH-189 amplifier is a high linear GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. The SXH-189 offers significant advantages with

Contextual Info: Preliminary Product Description SXH-1 Stanford Microdevices’ SXH-1 amplifier is a high linear GaAs Heterojunction Bipolar Transistor HBT amplifier housed in low-cost surface-mountable plastic package. The SXH-1 offers significant advantages with higher gain and higher linearity than existing competitive

6655h

Contextual Info: EMC2105 RPM-Based High Side Fan Controller with Hardware Thermal Shutdown PRODUCT FEATURES Datasheet General Description Features The EMC2105 is an SMBus compliant fan controller with up to four external temperature channels. The fan driver can be operated using two methods each with two

Contextual Info: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers