177 TRANSISTOR DATASHEET Search Results

BD175

Contextual Info: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

bd175

Abstract: bd177
Contextual Info: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO

Contextual Info: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ‘ Collector Base Voltage : BD176 : BD178 : BD180 Collector Emitter Voltage

BD176

Abstract: transistor bd176
Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

BD178

Abstract: BD176 BD180 transistor bd176
Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

BD178

Abstract: BD176 BD180
Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

Contextual Info: BD176/178/180 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol

bd177

Abstract: BD175
Contextual Info: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 45 V BD177 60 V BD179 80 V 45 V BD177 60 V BD179 80 V BD175

Contextual Info: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package

Contextual Info: PD54003-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 3 W with 12 dB gain @ 500 MHz ■ New RF plastic package

Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

j174 transistor

Abstract: J175 J174 J176 J177 MMBFJ175 MMBFJ176 MMBFJ177 J175 transistor transistor j175
Contextual Info: J174 / J175 / J176 / J177 / MMBFJ175 / 176 / 177 MMBFJ175 MMBFJ176 MMBFJ177 J174 J175 J176 J177 G S S G TO-92 D SOT-23 D Mark: 6W / 6X / 6Y NOTE: Source & Drain are interchangeable P-Channel Switch This device is designed for low level analog switching sample and hold

transistor RJp 30

Abstract: mo-229 pad layout transistor RJp MO-229 MO-220-wgge RJP PRODUCT jedec package MO-220 QFN 20 MO-220 Rjc jedec package MO-220 for qfn JESD51-5
Contextual Info: Product Information Package Thermal Characteristics This document provides test information about the standard packages offered by Allegro MicroSystems. The data given is intended as a general reference only and is based on certain simplifications such as constant chip size and standard

SVI 3104 c

Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or

MOTOROLA SCR 1725

Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Contextual Info: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1

CHY17f-2

Abstract: CHY17F-1 CNY17F-3 CNY17F-2 CHY17 CNY17F3 transistor 2z
Contextual Info: M QUALITY •[TECHNOLOGIES VDE APPROVED ph o to tr a h sisto r o pto c o u pler s CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z d e s c r ip t io n p a c k a g e d im e m s io h s [ft rft The CNY17 series consists o f a Gallium Arsenide IRED coupled w ith an NPN phototransistor.

transistor 91 330

Abstract: Circuit diagram of LDR ldr 10k SM8143 NIPPON CAPACITORS ldr resistor small ldr 2 pins datasheet 1SS370 SM8143A vsop 16
Contextual Info: SM8143 Application Note EL Driver IC OVERVIEW The SM8143 has independent inductor drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.

transistor 91 330

Abstract: toko 10k coil ldr 10k NIPPON CAPACITORS 1SS370 SM8143 SM8143A
Contextual Info: SM8143 NIPPON PRECISION CIRCUITS INC. Application Note EL Sheet Driver IC OVERVIEW The SM8143 has independent coil drive oscillator circuit OCL and EL drive oscillator circuit (OCE) built-in. Accordingly, the frequency of oscillation can be individually changed to control the brightness, current consumption, and frequency over a wide range.

sanyo os-con sp

Abstract: sanyo WG capacitors sanyo capacitor wg Nichicon WEEK CODE 10SP470M UPM1C471MPH6 C3225X5R0J107MT diode wg smt sanyo capacitor SE wg UWG1A471MNR1GS
Contextual Info: NEW Product PTHxx010Y DDR Converter Application Note 177 1. Introduction 2 Packaging Labeling and Part Numbering Sequence 2. System Interface Information Input Capacitor Output Capacitance Optional Tantalum Capacitors Ceramic Capacitors Capacitor Table Designing for Very Fast Load Transients

BC177 NPN transistor

Abstract: BC177 pnp transistor Transistor BC 177 Datasheet Transistor BC177 BC177 transistor BC178-BC179 BC177 NPN transistor datasheet BC178B transistor bc178 BC178
Contextual Info: BC177 BC178 BC179 MECHANICAL DATA Dimensions in mm inches GENERAL PURPOSE SMALL SIGNAL PNP BIPOLAR TRANSISTOR 5 .8 4 (0 .2 3 0 ) 5 .3 1 (0 .2 0 9 ) 4 .9 5 (0 .1 9 5 ) 4 .5 2 (0 .1 7 8 ) 5 .3 3 (0 .2 1 0 ) 4 .3 2 (0 .1 7 0 ) APPLICATIONS ) ) 1 7 1 . ( ( 3

2SB644

Abstract: 2SB0643 2SB0644 2SB643 2SD0638 2SD0639 2SD638 2SD639
Contextual Info: Transistor 2SB0643, 2SB0644 2SB643, 2SB644 Silicon PNP epitaxial planer type For low-power general amplification Complementary to 2SD0638 (2SD638) and 2SD0639 (2SD639) Unit: mm 2.5±0.1 Parameter Symbol Collector to 2SB0643 base voltage 2SB0644 Collector to

4491E

Abstract: 2N2222ACSM "npn switching transistor" 2N2222ACSM-RH TST001 SIGMA as 103 63E-10
Contextual Info: 2N2222ACSM-RH HIGH SPEED, MEDIUM POWER NPN SWITCHING TRANSISTOR RADIATION TESTED FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004)

smd TRANSISTOR 27e

Abstract: TRANSISTOR SMD a38 smd 27E
Contextual Info: dUALITY. TE CHN OLOGIES CORP 27E D 74bt.flSl QQ03M37 4 VDE APPROVED PHOTOTRANSISTOR OPTOCOUPLERS QUALITY TECHNOLOGIES T ~ 4 I- CNY17F1/1Z CNY17F2/2Z CNY17F3/3Z DESCRIPTION PACKAGE DIMENSIONS The CNY17 series consists of a Gallium Arsenide IRED coupled with an NPN phototransistor.

Contextual Info: Product Description SXH-189 Stanford M icrodevices’ SXH-189 am plifier is a high linear GaAs Heterojunction Bipolar Transistor HBT am plifier housed in low-cost surface-m ountable plastic package. The SXH-189 offers significant advantages with higher gain and higher linearity than existing competitive