175II Search Results

A22TF

Abstract: LA7266M 200MVP-P yhpv 0V420 da 3309 V3025 22bf 0V440 LA7266
Contextual Info: LA 7 2 6 6 M L A 7 2 6 6 M & , NTSC & £ C r .L A ? 263M 'fgm m £ . t b iZ & Q W S * i=? - - h * • &m~? h ' j e * >^D-7äEW8S ♦ '^□*7iE3QJSifl3iI 1 H i- G i GE • x - f W A f 7 x . —7 ; '> 7 & •^ □ h'^ L P F ■7 i - ^ • S Y N C ttä D 175ii

Contextual Info: ANALOG ÜFVICFS INC ANALOG DEVICES SIE D DfllbflGO Ü D 3 7 0 M M '- 7 1 - H - 374 • ANA l Precision Instrumentation Amplifier FEATURES Low Noise: 0 .3 | jlV p-p 0.1 Hz to 10Hz Low Nonlinearity: 0.003% G = 1 High CMRR: 120dB (G = 1000) Low Offset Voltage: 50|iV

Contextual Info: TD62501F-TD62507F BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC SINGLE DRIVE TD62501F TD62502F TD62503F TD62504F TD62505F TD62506F TD62507F 16 9 RBRHflflRB o y y ü üy Bhe Features . Output Current . 200mA Max. . High Voltage Outputs . 35V

AD624

Contextual Info: ANALOG DEVICES □ Precision Instrumentation Amplifier AD624 FEATURES Low Noise: 0.2|iV p-p 0.1 Hz to 10Hz Low Gain TC: 5ppm max G = 1 Low Nonlinearity: 0.001% max (G = 1 to 200) High CMRR: 130dB min (G = 500 to 1000) Low Input Offset Voltage: 25|i.V, max

Contextual Info: ANALOG D EVICES Precision Instrumentation Amplifier CON NECTION DIAGRAMS Ceramic D and SOIC (R) Packages FEATURES Low Noise: 0.3fiV p-p 0.1Hz to 10Hz Low Nonlinearity: 0.003% (G = 1) High CMRR: 120dB (G = 1000) Low Offset Voltage: 50fiV Low Offset Voltage Drift: 0.5jiV/°C

Contextual Info: EL 5 EL 5 O u tp u t P en to d i The E L 5 is a steep-slope, 18 W o u tp u t pentodi'. m ax5i Using this valve it is possible to obtain greater ^ o u tp u t power th a n w ith tw o 9 W pentodes in a balanced circuit. Linear an d non-linear distortion are considerably reduced by applying A. F. feed­

2SC2036

Abstract: AC46C ac46 AL5000
Contextual Info: TOSHIBA { D I S C R E T E / O P T O } ÏT 9097250 TOSHIBA DISCRETE / O P T O 39G 0 1 9 2 0 SEMICONDUCTOR TECHNICAL DATA O O DE p T C H T S S D D O O nS D 0 O T-3I-Z3 I S h S y - í í ; TOSH IBA T R A N S IS T O R 2 S C 2 O3 6 SILICON NPN EPITAXIAL TYPECPCT PROCESS)*-