175 SOT363 Search Results

CH781UGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD CH781UGP SURFACE MOUNT SCHOTTKY DIODE ARRAY VOLTAGE 40 Volts CURRENT 175 mAmperes APPLICATION * Ultra high speed switching FEATURE * Small surface mounting type. SC-88/SOT-363 * High speed. (TRR=8.0nSec Typ.) * Suitable for high packing density.

431 T1 6-pin

Abstract: SQ1912
Contextual Info: SQ1912EEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested

Contextual Info: SQ1912EEH www.vishay.com Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested

sq1470

Abstract: 34 sot-363 marking 9C SOT363 sot363 ON Marking DS
Contextual Info: SQ1470EH www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQ1421EEH www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested

Contextual Info: SQ1431EH www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

SQ1420

Abstract: vishay MOSFET code marking SQ1420EEH
Contextual Info: SQ1420EEH Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

Contextual Info: SQ1431EH Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc

Contextual Info: SQ1431EH www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested

Contextual Info: SQ1420EEH www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg Tested • Typical ESD Protection: 800 V

SQ1902EL-T1-GE3

Abstract: 65532 SQ1902EL MARKING CODE 9N
Contextual Info: SQ1902EL Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

SQ1912EEH-T1-GE3

Abstract: SQ1912EEH
Contextual Info: SQ1912EEH Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd

SQ1902EL

Contextual Info: SQ1902EL Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC 20 RDS(on) () at VGS = 4.5 V

Contextual Info: SQ1905EL www.vishay.com Vishay Siliconix Automotive Dual P-Channel 1.8 V G-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () at VGS = - 4.5 V 0.6 RDS(on) () at VGS = - 2.5 V 0.932 RDS(on) () at VGS = - 1.8 V 2.27 ID (A) • TrenchFET Power MOSFET

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Capacitance Q uad Array for ESD Protection General Description Low capacitance 5-fold ESD protection array in the very small SOT363 plastic package designed to protect up to five transmission or data lines from the damage caused by

LESDA5VAW6T1G

Contextual Info: LESHAN RADIO COMPANY, LTD. Low Capacitance Q uad Array for ESD Protection General Description Low capacitance 5-fold ESD protection array in the very small SOT363 plastic package designed to protect up to five transmission or data lines from the damage caused by

BFM520

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFM520 Dual NPN wideband transistor Product specification Supersedes data of 1995 Sep 04 1996 Oct 08 NXP Semiconductors Product specification Dual NPN wideband transistor BFM520 FEATURES PINNING - SOT363A • Small size PIN SYMBOL

Contextual Info: DISCRETE SEMICONDUCTORS DAT BFM505 Dual NPN wideband transistor Product specification Supersedes data of 1995 Sep 04 1996 Oct 08 NXP Semiconductors Product specification Dual NPN wideband transistor BFM505 FEATURES PINNING - SOT363A • Small size PIN SYMBOL

CH3904

Abstract: NPN-CH3904 CH3906 TRANSISTOR CH3906 CHT3946UPNPT PNP-CH3906
Contextual Info: CHENMKO ENTERPRISE CO.,LTD CHT3946UPNPT SURFACE MOUNT Complementary Small Signal Transistor VOLTAGE 40 Volts CURRENT 0.2 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT363

AO7405

Abstract: SC706
Contextual Info: AO7405 30V P-Channel MOSFET General Description Product Summary VDS The AO7405 uses advanced trench technology to provide excellent RDS ON , low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide

2N7002BKS

Abstract: dual sot363 g1 TRANSISTOR SMD MARKING CODE MOSFET TRANSISTOR SMD MARKING CODE A1 smd transistor marking zt
Contextual Info: 2N7002BKS 60 V, 300 mA dual N-channel Trench MOSFET Rev. 2 — 23 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

NXP SMD TRANSISTOR MARKING CODE s1

Abstract: DIODE smd marking CODE NZ bss138ps MOSFET TRANSISTOR SMD MARKING CODE A1 NXP SMD mosfet MARKING CODE 771-BSS138PS115
Contextual Info: BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

BSS84AKS.115

Abstract: BSS84AKS TSSOP6 package
Contextual Info: TS SO P6 BSS84AKS 50 V, 160 mA dual P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) package using Trench MOSFET technology.

MOSFET TRANSISTOR SMD MARKING CODE A1

Abstract: 2N7002PS m8 smd transistor g1 TRANSISTOR SMD MARKING CODE smd transistor marking A1 transistor smd marking A1 NXP SMD mosfet MARKING CODE MOSFET TRANSISTOR SMD MARKING A1
Contextual Info: 2N7002PS 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 1 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor FET in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET