16MX8 DRAM EDO Search Results

16Mx8 dram EDO

Abstract: code edo DENSE-PAC
Contextual Info: 16Mx8 50 - 60ns, TSOP Stack 30A228-10 A M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED16MX8RKY5 High Density Memory Device ADVANCED INFORMATION DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family

Contextual Info: 16Mx8, 50 - 60ns, TSOP Stack 30A199-00 B M-Densus 128 Megabit CMOS 3.3V EDO DRAM DP3ED16MX8Rn5 High Density Memory Device PRELIMINARY DESCRIPTION: The M-Densus series is a family of interchangeable memory modules. The 64 Megabit DRAM is a member of this family

DS84

Contextual Info: 16M x 64 Bit SDRAM SODIMM PC100/133 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 6416ZsSWM4G09TWK 144 Pin 16Mx64 SDRAM SODIMM Unbuffered, 4k Refresh, 3.3V with SPD General Description Pin Assignment Pin# 1 The module is a 16Mx64 bit, 9 chip, 144 Pin SODIMM module consisting of 8 16Mx8 (TSOP)

Contextual Info: SMART SM57232809UD0G6 Modular Technologies October 21, 1998 Revision History • October 21, 1998 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SMART SM56416809UNZG6 Modular Technologies October 21, 1998 Revision History • October 21, 1998 Modified pg. 4 and 7. • August 18, 1998 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

smart modular

Abstract: edo dram 50ns 72-pin simm 16MX8
Contextual Info: SMART SM5323240U4LUUU Modular Technologies Preliminary 128MByte 32M x 32 DRAM Module - 16Mx4 based 72-pin SIMM, with Voltage Regulators Features Part Numbers • • • • • • • • • • • SM5323240P4XUUU : SM5323240D4XUUU : Standard : JEDEC (5.0V FPM only)

4Mx1 sram

Abstract: HM51W17805 16Mx8 dram EDO HB286060A3 HB289016A4 HN29W16814 8mx32 simm 72 pin FP-28 HB289048C4 TFP-32
Contextual Info: Memories Overview Device Name Total Size Family Device Organisation Access Cycle Time Package Time min ns Type - Pin max(ns) Count Supply Voltage Remarks link HB286008A3 8Mbyte NVM Flash_Card - - - ATA-68 3.0-3.6 4.5-5.5 ATA flash card, ISA Bus I/F HB286008C3

M5M417405CJ6

Abstract: GM71C17403CJ-6
Contextual Info: 32MB 72-PIN EDO SIMM With 16Mx8 3.3VOLT TS8MED3260G Description Features The TS8MED3260G is a 8M by 32-bit dynamic RAM • Fast Page Mode with Extended Data Out module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.

GM71C17403CJ6

Abstract: M5M417405CJ-6 HM5117405S-6 HM5117405S6 GM71C17403CJ-6 M5M417405CJ6 M5M417405CJ Transcend circuit diagram GM71C17403 72-PIN
Contextual Info: 32MB 72-PIN EDO SIMM With 16Mx8 3.3VOLT TS8MED3260G
Description Features The TS8MED3260G is a 8M by 32-bit dynamic RAM • Fast Page Mode with Extended Data Out module with 16 pcs of 4Mx4 DRAMs assembled on the • Single +5.0V ± 10% power supply. printed circuit board.

is25c64B

Abstract: IC61C1024 IS25C128A IS42VM16800E IS42SM16800 IS24C16A Smart is62c1024al tsop2-54 4kx8 sram IS42S32800D
Contextual Info: To our valued customers, Often times electronic systems are placed in harsh environments that test the limits of device quality and reliability. These harsh environments exist in many Industrial, Automotive, Networking, and Mobile Communication applications. Many of these applications are

Contextual Info: SMART SM5641680U4N9GU Modular Technologies May 14, 1999 Revision History • May 14, 1999 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com Europe: 36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: +44-1908 234030 • Fax: +44-1908-234191

Contextual Info: SMART SM5723240UUD8GU Modular Technologies March 12, 1999 Revision History • March 12, 1999 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

CI 2272 AN

Contextual Info: SMART SM5643240UUN4GU Modular Technologies July 24, 1997 256MByte 32M x 64 DRAM Module - 16Mx4 based 168-pin DIMM, Non-Buffered Features Part Numbers • • • • • • • • • • • SM56432400UNUGU SM56432401UNUGU SM56432408UNUGU SM56432409UNUGU

Automotive Product Selector Guide

Abstract: products automotive IS61WV51216 IS61WV512 DDR RAM 512M is66wve2m16 IS61LPS2048 IS61WV25632 BGA165 VFBGA package tray
Contextual Info: Automotive Market Support Introduction ISSI has been supporting the Automotive Market since 1999. In 2001, ISSI began to broaden its support of the market by introducing the Automotive Business Unit. The purpose of this business unit is to provide cross-functional unit support within ISSI to continually enhance the Automotive Infrastructure from

K8D3216UBC-pi07

Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Contextual Info: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM

ra57

Abstract: ra57 8 pin
Contextual Info: |V|7< t w c | 7 p A r U lj,J> l^ ii,- r A C / '* - 5 12 M e g a b it C M O S D R A M 2 56 M e g a b it C M O S D R A M is e n s u s High Density Memory Device m i c r o s y s t e m s DESCRIPTION: 1 28 M e g a b it c m o s d r a m PIN-OUT DIAGRAM The /H-7>ettsns series is a family of interchangeable memory

Contextual Info: SMART SM5723240UUD4GU Modular Technologies November 6, 1998 Revision History • November 6, 1998 Modified part numbers on pg. 2. • April 24, 1998 Datasheet released. Corporate Headquarters: 4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel: 510 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com

Contextual Info: SMART SM5323240U4XUUU Modular Technologies March 12, 1997 128MByte 32M x 32 DRAM Module - 16Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM532324004XUUU SM532324014XUUU SM532324084XUUU SM532324094XUUU Standard

Contextual Info: SMART SM5321640U4X4UU Modular Technologies April 3, 1997 64MByte 16M x 32 DRAM Module - 16Mx4 based 72-pin SIMM with Level Translators Features Part Numbers • • • • • • • • • • • SM5321640F4X4UU SM5321640E4X4UU Standard : JEDEC Configuration

RAS 2410

Contextual Info: SMART SM5641640UUXUGU Modular Technologies Preliminary 128MByte 16M x 64 DRAM Module - 16Mx4 based 168-pin DIMM, Buffered, ECC Features Part Numbers • • • • • • • • • • • SM56416400UXUGU SM56416401UXUGU SM56416408UXUGU SM56416409UXUGU

4Mx4 dram simm

Abstract: TTP32 SIMM72 dram card 60 pin 8KX8 TTP42 4MX16* dram fpm 4Mx8 dram simm 32MByte 334k
Contextual Info: Memory Overview Package Type -Pin Count Supply Voltage Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F NVM Flash_Card CF-50 3.3; 5.0 Compact flash card 15MByte NVM Flash_Card ATA-68 3.3; 5.0 ATA flash card, ISA Bus I/F HB286015C3 15MByte NVM Flash_Card

WPD16M8V

Contextual Info: a WPD16M8V-XB2C M/HITE /MICROELECTRONICS 16Mx8 Dynamic RAM MODULE 3.3V Supply p r e l im in a r y * FEATURES • Fast A c c ess T im e (tRAC) = 50, 60ns ■ ■ P o w e r S up p ly: 3 .3 V ± 0 .3 V ■ LV T T L C o m p a tib le In p u ts and O u tp uts

L-23014-01

Abstract: L24002 mitsubishi cdram
Contextual Info: L-21001-0B MITSUBISHI ELECTRIC Mitsubishi DRAM Technical Direction High Performance, Low Power,High Density,High Speed etc. High Density Wide Bit Organization 1G High Speed 512M Direct Rambus TM x32 256M DDR 128M SDRAM EDO Fast Page 64M DRAM Self Refresh

Contextual Info: WPD16M8-XB2C W h it e E l e c t r o n ic D e sig n s C o r p o r a t io n 16Mx8 Dynamic RAM MODULE PR ELIM IN A R Y * FEATURES • Fast A c c ess T im e tRAC = 50, 60ns ■ 4 K or 8K R e fresh Cycles ■ P o w e r Sup p ly: 5V ± 0.5V ■ T T L (5V) C o m p a tib le In p uts and O u tp uts