16MAY2007 Search Results

ADS1605

Abstract: ADS1606 ADS1625 ADS1625I ADS1626 TMS320C6000 TQFP-64
Contextual Info: ADS1625 ADS1626 SBAS280E − JUNE 2003 − REVISED MAY 2007 18ĆBit, 1.25MSPS AnalogĆtoĆDigital Converter FEATURES D Data Rate: 1.25MSPS D Signal-to-Noise Ratio: 93dB D Total Harmonic Distortion: −101dB D Spurious-Free Dynamic Range: 103dB D Linear Phase with 615kHz Bandwidth

Contextual Info: LDS3985 series Ultra low drop-low noise BICMOS 300mA V. Reg. for use with very low ESR output capacitor Features • Input voltage from 2.5V to 6V ■ Stable with low ESR ceramic capacitors ■ Ultra low dropout voltage 150mV typ. at 300mA load, 0.4mV typ. at 1mA load

NE555

Abstract: TLC555 TLC555Q TLC555-Q1 TLC555QDRQ1
Contextual Info: TLC555-Q1 LinCMOS TIMER www.ti.com SLFS078 – OCTOBER 2006 FEATURES • • • • • • Qualified for Automotive Applications Very Low Power Consumption – 1 mW Typ at VDD = 5 V Capable of Operation in Astable Mode CMOS Output Capable of Swinging Rail to

744312150

Abstract: PM6641 PM6641TR 13510 1s05 PM6641EVAL
Contextual Info: PM6641 Monolithic VR for chipset and DDR2/3 supply for ultra-mobile PC UMPC applications Features • 0.8 V ±1% internal voltage reference ■ 2.7 V to 5.5 V input voltage range ■ Fast response, constant frequency, current mode control ■ Three independent, adjustable, out-of-phase

Contextual Info: LD2979xx Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.2 V typ. at 50 mA load ■ Very low quiescent current (typ. 500 µA at 50 mA load) ■ Output current up to 50 mA ■ Logic-controlled electronic shutdown ■

Contextual Info: PD85035-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.9 dB gain @ 870 MHz / 13.6 V ■ Plastic package ■ ESD protection

Contextual Info: SN74LVC1G58 CONFIGURABLE MULTIPLE-FUNCTION GATE www.ti.com SCES415K – NOVEMBER 2002 – REVISED JANUARY 2007 FEATURES • • • • • • • • Available in the Texas Instruments NanoFree Package Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V

JESD97

Abstract: LD2979 LD2979M30TR LD2979M33TR LD2979M38TR LD2979M50TR LD2979XX30 LD2979XX33 LD2979XX38 LD2979XX50
Contextual Info: LD2979xx Very low drop voltage regulators with inhibit Features • Very low dropout voltage 0.2 V typ. at 50 mA load ■ Very low quiescent current (typ. 500 µA at 50 mA load) ■ Output current up to 50 mA ■ Logic-controlled electronic shutdown ■

Contextual Info: SN74AHC1G04 SINGLE INVERTER GATE SCLS318Q − MARCH 1996 − REVISED JUNE 2005 D D D D D Schmitt Trigger Action at All Inputs Makes Operating Range of 2 V to 5.5 V Max tpd of 6.5 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V D

744312150

Abstract: PM6641 PM6641TR VFQFPN-48 VFQFPN48
Contextual Info: PM6641 Monolithic VR for chipset and DDR2/3 supply for ultra-mobile PC UMPC applications Features • 0.8 V ±1 % internal voltage reference ■ 2.7 V to 5.5 V input voltage range ■ Fast response, constant frequency, current mode control ■ Three independent, adjustable, out-of-phase

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2002 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 1 2002 REVISIONS ALL RIGHTS RESERVED. P LTR E -X- 6 ROW FG GROUND 10 6 5 1.50 ROW DG (GROUND) ROW D 0.20 1.5 ROW C ROW BG (GROUND) BSC 6 -Y- REFERENCE APPLICATION SPEC 114-13059 FOR RECOMMENDED

C900

Abstract: STLM75 STTS75 STTS751 0034D
Contextual Info: STTS75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±0.5°C (typ) accuracy – ±2°C (max) accuracy from –25°C to +100°C ■ Low operating current: 75 µA (typ)

ADS1605

Abstract: ADS1606 ADS1625 ADS1625I ADS1626 TMS320C6000 TQFP-64
Contextual Info: ADS1625 ADS1626 SBAS280E − JUNE 2003 − REVISED MAY 2007 18ĆBit, 1.25MSPS AnalogĆtoĆDigital Converter FEATURES D Data Rate: 1.25MSPS D Signal-to-Noise Ratio: 93dB D Total Harmonic Distortion: −101dB D Spurious-Free Dynamic Range: 103dB D Linear Phase with 615kHz Bandwidth

JESD97

Abstract: LDS3985 LDS3985XX28 LDS3985XX33 TSOT23 TSOT23-5L LDS3985M18R ultra drop lds3985m33r LDS3985PU33R
Contextual Info: LDS3985xx Ultra low drop-low noise BiCMOS 300 mA volt. reg. for use with very low ESR output capacitor Features • Input voltage from 2.5 V to 6 V ■ Stable with low ESR ceramic capacitors ■ Ultra low dropout voltage 150 mV typ. at 300 mA load, 0.4 mV typ. at 1 mA load

Contextual Info: LDS3985xx Very low drop and low noise BiCMOS 300 mA voltage regulator Datasheet - production data and high quality tantalum capacitor. The ultra low drop voltage, low quiescent current and low noise make it suitable for low power applications and battery-powered systems. Regulator ground

NV SMD TRANSISTOR

Abstract: PD85035-E PD85035 PD85035S PD85035S-E AN1294 JESD97 J-STD-020B PD85035STR-E PD85035TR-E
Contextual Info: PD85035-E PD85035S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35W with 14.9dB gain @ 870MHz / 13.6V ■ Plastic package

Monopack 2 manual

Abstract: lt 5217 ic485-I sim 5218 LT 5224 LT 5212 A250 TMC453 ic485-lp-1f LT 5216
Contextual Info: MONOPACK 2 Manual Version: 1.04 Jan 29th, 2010 Trinamic Motion Control GmbH & Co KG Sternstraße 67 D - 20357 Hamburg, Germany http://www.trinamic.com Monopack 2 Manual V1.04 Version Version 1.00 1.01 1.01 1.02 1.03 1.04 Date 2-Nov-05 18-Aug-06 21-Aug-06 16-May-2007

Contextual Info: PD84001 RF power transistor the LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 1 W with 15 dB gain @ 870 MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel

GW39NC60

Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■

Contextual Info: LDS3985xx Ultra low drop-low noise BiCMOS 300 mA volt. reg. for use with very low ESR output capacitor Features • Input voltage from 2.5 V to 6 V ■ Stable with low ESR ceramic capacitors ■ Ultra low dropout voltage 150 mV typ. at 300 mA load, 0.4 mV typ. at 1 mA load

schematic diagram "induction heating"

Abstract: schematic diagram induction heating diagram induction schematic diagram induction
Contextual Info: STGW39NC60VD N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT Features Type VCES VCE sat (Max)@ 25°C IC @100°C <2.5V 40A STGW39NC60VD 600V • Low CRES / CIES ratio (no cross conduction susceptibility) ■ High frequency operation ■

Contextual Info: SN74LVC1G332 SINGLE 3-INPUT POSITIVE-OR GATE www.ti.com SCES489D – SEPTEMBER 2003 – REVISED SEPTEMBER 2006 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2003 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 1 2003 REVISIONS ALL RIGHTS RESERVED. P 1 -X- 6 12 ROW HG GROUND ROW H 7 ROW FG (GROUND) ROW F 5 ROW E 1.50 ROW DG (GROUND) 1.5 ROW C ROW BG (GROUND) TYP ROW B ROW A

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2002 RELEASED FOR PUBLICATION BY - 6 5 4 3 2 1 2002 REVISIONS ALL RIGHTS RESERVED. P LTR E 1 -X- 6 20 11 10 1.50 1 0.20 ROW D REVISED PER ECO-14-005095 DWN APVD AP 11APR2014 RP 5 1.50 TYP ROW C ROW BG GROUND ROW B