16M SERIAL SRAM Search Results

MX25L1605ZM

Abstract: 25l1605 8x6mm MX25L1605 IN3064 256-Byte
Contextual Info: MX25L1605ZM Macronix NBit TM Memory Family FEATURES 16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY - Automatically erases and verifies data at selected GENERAL • Serial Peripheral Interface SPI compatible - Mode 0 and Mode 3 • 16,777,216 x 1 bit structure

Contextual Info: GS81302D06/11/20/38E-500/450/400/350 144Mb SigmaQuad-II+ Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features 500 MHz–350 MHz 1.8 V VDD 1.8 V or 1.5 V I/O are just one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to

Contextual Info: Preliminary GS81302T08/09/18/36E-333/300/250/200/167 144Mb SigmaDDRTM-II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–167 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus

Contextual Info: Preliminary GS82582D18/36E-400/375/333/300/250 400 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O 288Mb SigmaQuad-IITM Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Clocking and Addressing Schemes • Simultaneous Read and Write SigmaQuad Interface

Contextual Info: Preliminary GS82582D19/37E-450/400/375/333 288Mb SigmaQuad-II+TM Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface

Contextual Info: Preliminary GS82582DT20/38E-550/500/450/400 288Mb SigmaQuad-II+ Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features 550 MHz–400 MHz 1.8 V VDD 1.8 V or 1.5 V I/O one element in a family of low power, low voltage HSTL I/O SRAMs designed to operate at the speeds needed to implement

Contextual Info: Preliminary GS82582T20/38E-550/500/450/400 288Mb SigmaDDR-II+TM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features 550 MHz–400 MHz 1.8 V VDD 1.8 V or 1.5 V I/O SRAMs. The GS82582T20/38E SigmaDDR-II+ SRAMs are just one element in a family of low power, low voltage HSTL

Contextual Info: Preliminary GS82582Q18/36E-357/333/300/250 357 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O 288Mb SigmaQuad-IITM Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Clocking and Addressing Schemes • Simultaneous Read and Write SigmaQuad Interface

Contextual Info: SONY CXK77Q36162GB 25/27/3 Preliminary 16Mb DDR1 HSTL High Speed Synchronous SRAM 512K x 36 Description The CXK77Q36162GB is a high speed CMOS synchronous static RAM with common I/O pins, organized as 524,288 words by 36 bits. This synchronous SRAM integrates input registers, high speed RAM, output registers, and a two-deep write buffer

64mb edo dram simm

Abstract: 8Mb SDRAM 5.0v memory 2mb 72-pin simm simm72 IBM11S43 ram 168 pin 8k refresh simm DIMM 72 pin out edo dram 72-pin simm
Contextual Info: Ta ble of C o n te n t s Go To 4Mb DRAM s , V RAMs & SGRAM s Go To 16Mb DRAMs & SDRAMs & 64Mb DRAM s Go To D RAM 72 Pin Mod u l e s Go To D RAM 72 & 144 Pin Small Ou tline Mod u l e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u l e s

176X220

Abstract: S1D13515F00A S1D13513B01B QFP22-208 epson 176X220 S1D13513F01A 18-BIT bitblt PFBGA12180 S1D13717B00B
Contextual Info: Display Controller Products - Downloads | LCD Controllers with Camer. &. 1 of 1 LCD Controllers | Frequently Asked Questions | Register and Login | Contact Us | Development Partners | Product Selection Guide | What Is LCDC

S1D13521

Abstract: s1d13517 S1D13522 S1D13781F00A s1d13781 S1D13774 S1D13522A00B S1V30330 S2D13P04 S1D13745
Contextual Info: ASSPs Application Specific Standard Products 2010 ASSPs Our goal in the Epson Semiconductor Operations Division is to be a true partner for you, by looking to give you an edge in product development through our concept of “+ less design”. C Application Specific Standard Products

MH8S64AQFC -7

Abstract: M5M51008CFP-70HI sop-32 pin Shipping Trays S1912 M5M5V108DFP-70HI jeida dram 88 pin M5M465165 MH8S64AQFC-6 MH8S64DBKG-6 PC-100
Contextual Info: Please Read Notes First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents New Publications MCP Multi Chip Package Standard Discrete DRAM PC Cards Standard DRAM Modules IC Package SRAM Flash Memory Quality Assurance and Reliability Testing

AT76C502A

Contextual Info: Features • Wireless Interface Following the IEEE 802.11b Standard • Wireless LAN MAC Unit with ARM7TDMI RISC Processor • Integrated 128-byte Transmit and 128-byte Receive FIFOs for Wireless MAC Layer Functions • 16-bit PCMCIA Bus Interface • Glueless SRAM Interface for All MAC Operations, Supporting up to 16M Bytes of

ML86V8101

Abstract: ML610Q794G ML7147 ML610Q488 ML98 ML7138 ML7247-001
Contextual Info: Notes 1 The information contained in this document is provided as of october,2013. 2) The information contained herein is subject to change without notice. Before you use our Products, please contact our sales representative as listed below) and verify the

MARKING HRA

Abstract: 4kw marking
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

MARKING HRA

Abstract: SEC MCP 4kw marking
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance

nanotron

Abstract: nanoNET system specifications NanoNET PHY and MAC Nanotron Technologies NA1TR8 802.15.4a NanoNET PHY and MAC System Specifications power supply using 7812 ic CRYSTAL-16 circuit diagram of rf transmitter and receiver
Contextual Info: nanoNET TRX NA1TR8 Transceiver Register Description Version 1.06 NA-03-0100-0246-1.06 Document Information nanoNET TRX (NA1TR8) Transceiver Register Description Document Information Document Title: nanoNET TRX (NA1TR8) Transceiver Register Description Document Version:

SOP 8 200MIL

Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Contextual Info: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with

Contextual Info: WHITE /M IC R O E L E C T R O N IC S WH22DXL2X-002X 68040 MODULE, 16M SRAM/16M FLASH, ASIC MODULAR ADVANCED* FUNCTIONAL DESCRIPTION FEATURES • Based on 68040 juP The 68040 General Purpose Processor M CM is a high perform ance, ■ Processor Clock Frequencies: 50, 66 M H z

EMIF sdram full example

Abstract: TIMING DIAGRAM OF MCBSP and E1 interface AC97
Contextual Info: Chapter 4 Peripherals In addition to on-chip memory, the TMS320C62x and TMS320C67x devices also contain peripherals for communication with off-chip memory, coproces­ sors, host processors, and serial devices. All of these peripherals are briefly described here, but each ’C6x device has only a specific subset of them. See

3654P

Abstract: DRAM 4464 jeida dram 88 pin MB814260 4464 dram 1024M-bit 4464 64k dram MB81G83222-008 mb814400a-70 4464 ram
Contextual Info: To Top / Lineup / Index Product Line-up Memory Volatile memory 4M-bit DRAM 5.0V RAM 4M-bit DRAM (3.3V) 16M-bit DRAM (5.0V) 16M-bit DRAM (3.3V) 16M-bit SDRAM 64M-bit SDRAM SGRAM DRAM Modules (5.0V) DRAM Modules (3.3V) SDRAM Modules Non-Volatile memory Rewritable

S5L9291X01-T0R0

Abstract: a00a AD10 AD11 AD12 S5L9291X 1414f
Contextual Info: DIGITAL SIGNAL PROCESSOR S5L9291X INTRODUCTION 100-TQFP-1414 S5L9291X is a signal processing LSI for the CD. Digital processing functions EFM demodulation, error correction , spindle motor servo processing, compression for anti-rolling and anti-shock, expandable

SAMSUNG NAND Flash Qualification Report

Abstract: K5P2880YCM flash 16M SAMSUNG 128Mb NAND Flash Qualification Reliability 1Mx8 bit Low Power CMOS Static RAM
Contextual Info: K5P2880YCM - T085 Document Title Multi-Chip Package MEMORY 128M Bit 16Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Jun. 11th 2001 Advanced Information Note : For more detailed features and specifications including FAQ, please refer to Samsung’s web site.