igct abb
Abstract: 16L45 IGCT a7000 5SDF16L4502
Contextual Info: VRRM IFAVM IFRMS IFSM VF0 rF VDClink = = = = = = = 4500 1300 2000 33 2.00 0.55 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 • • • • • Patented free-floating silicon technology
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16l4502ch-5600igct abb16l45+3igcta70005sdf16l4502
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7000UC
Abstract: 5SDF16L4502 106A2 16L4502
Contextual Info: Key Parameters VRRM = 4500 IFAVM = 1300 IFRMS = 2000 IFSM = 33 VF0 = 2.00 rF = 0.55 VDClink = 2800 Fast Recovery Diode for IGCT applications V A A kA V mΩ V 5SDF 16L4502 MARKETING INFORMATION Doc. No. 5SYA 1153-00 Feb. 99 Features • Patented free-floating silicon technology
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16l4502ch-56007000uc5sdf16l4502+1106a2
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diode sy 170
Abstract: 26L4503 5SHX 14H4502 KN11 35L45 35l450
Contextual Info: I N T E G R A T E D G A T E - C O M M U T A T E D _ T H Y R I S T O R S - Patented free-floating silicon techno logy. - Patented low-inductance housing technology. - Optional snubberless operation. - Exceptionally low on-state losses.
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diode sy 17026l45035shx 14h4502kn11+235l4535l450
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FSV 052
Contextual Info: F A S T R E C O V E R Y _ D - I O D E S - O ptim iert für schnelles und weiches Ausschaltverhalten. - Kleine Speicherladung. - Hohes zulässiges d i/d t beim Aus schalten. - Vollständiges Sortiment für den Einsatz mit GTOs.
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05d250511f250107f450113h4501+75sdf14h450510h600401r250101r250201r250301r2504fsv 052
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