16JUN08 Search Results

mosfet k 2038

Abstract: IRFP450A
Contextual Info: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

Contextual Info: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

IRFIBC40

Abstract: TO-220 FULLPAK Package SiHFIBC40G
Contextual Info: IRFIBC40G, SiHFIBC40G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • Isolated Package Low Thermal Resistance Sink to Lead Creepage Dist. = 4.8 mm High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Dynamic dV/dt Rating

MS25081

Abstract: C1003 21EN322-RB MIL-PRF-8805 gpec m.s angle steel weight
Contextual Info: MICRO SWITCH F R E E P O RT ILL'N O 'S A O fV I S ION OF F CO. M FC- CO OC C A T A L O G LIS T IN G 21EN322-RB SWITCH-ENCLOSED U S A H O NEYW ELL » 192* CIRCUIT DIAGRAM OÛ oc I .375 DIA CM C\J .375 DIA X .12 WIDE CORROSION RESISTANT STEEL ROLLER MOUNTED 9 0 ° TO BUSHING

Contextual Info: IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 74 Qgs (nC) 19 Qgd (nC) 35 Configuration Single D Ultra Low Gate Charge Reduced Gate Drive Requirement

IRFIBC40

Abstract: IRFIBC40GLC SiHFIBC40GLC SiHFIBC40GLC-E3 SiHFIBC40G
Contextual Info: IRFIBC40GLC, SiHFIBC40GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRFP22N60K

Abstract: irfp22n60 91208 SiHFP22N60K
Contextual Info: IRFP22N60K, SiHFP22N60K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 0.24 Qg (Max.) (nC) 150 Qgs (nC) 45 Qgd (nC) 76 Configuration • Improved Gate, Avalanche and Dynamic dV/dt

2.1 to 5.1 home theatre circuit diagram

Abstract: AT91SAM home theatre 2.1
Contextual Info: Features • Supported Standards MPEG-4 Simple and Advanced Profile, Levels 0-5 1 H.264 Baseline Profile, Levels 1-3.1 H.263 Profile 0, Levels 10-70 VC-1 • Simple Profile, Low and Medium Levels • Main Profile, Low, Medium and High Levels • Advanced Profile, Levels 1-3

IRFI644G

Abstract: SiHFI644G SiHFI644G-E3 S-81290-Rev
Contextual Info: IRFI644G, SiHFI644G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRFP31N50L

Abstract: irfp31n50
Contextual Info: IRFP31N50L, SiHFP31N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.15 Available RoHS* Qg (Max.) (nC) 210 Qgs (nC) 58 • Lower Gate Charge Results in Simpler Drive

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Abstract: IRLR120 IRLU120 SiHLR120 SiHLR120-E3
Contextual Info: IRLR120, IRLU120, SiHLR120, SiHLU120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V • Repetitive Avalanche Rated 0.27 Qg (Max.) (nC) 12 • Surface Mount (IRLR120/SiHLR120) Qgs (nC) 3.0

IRFI720GPBF

Abstract: IRFI720G SiHFI720G SiHFI720G-E3
Contextual Info: IRFI720G, SiHFI720G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRF730

Abstract: SiHF730 SiHF730-E3
Contextual Info: IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.7 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

IRLR110

Abstract: IRLU110
Contextual Info: IRLR110, IRLU110, SiHLR110, SiHLU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 100 RDS(on) (Ω) VGS = 5.0 V Available • Repetitive Avalanche Rated 0.54 Qg (Max.) (nC) 6.1 • Surface Mount (IRLR110/SiHLR110)

irfi9630g

Abstract: SiHFI9630G SiHFI9630G-E3
Contextual Info: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance

mosfet k 2038

Abstract: two transistor forward IRFP450A SiHFP450A free transistor vishay ld 91230
Contextual Info: IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Ω) VGS = 10 V 0.40 Qg (Max.) (nC) 64 Qgs (nC) 16 Qgd (nC) • Improved Gate, Avalanche and Dynamic dV/dt

SiHFI634G

Abstract: IRFI634G SiHFI634G-E3
Contextual Info: IRFI634G, SiHFI634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance

IRF530 vishay

Abstract: SiHF530 IRF530PBF tr irf530 IRF530 SiHF530-E3 IRF530P
Contextual Info: IRF530, SiHF530 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

IRFI540G

Abstract: SiHFI540G SiHFI540G-E3
Contextual Info: IRFI540G, SiHFI540G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating

IRFP17N50L

Abstract: SiHFP17N50L
Contextual Info: IRFP17N50L, SiHFP17N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • SuperFast Body Diode Eliminates the Need For External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.28 Qg (Max.) (nC) 130 Qgs (nC) 33 Qgd (nC) 59 Configuration

IRF9620

Abstract: SiHF9620 SiHF9620-E3 diode 18B
Contextual Info: IRF9620, SiHF9620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Available • P-Channel 1.5 RoHS* Qg (Max.) (nC) 22 • Fast Switching Qgs (nC) 12 • Ease of Paralleling 10 • Simple Drive Requirements

irf520 mosfet

Abstract: SiHF520 IRF520 Power MOSFETs Application Notes irf520 SiHF520-E3 1IRF520
Contextual Info: IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.27 Qg (Max.) (nC) 16 Qgs (nC) 4.4 Qgd (nC) 7.7 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated 175 °C Operating Temperature

irf830 datasheet

Abstract: SiHF830 IRF830 SiHF830-E3 any circuit using irf830 IRF830PBF
Contextual Info: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration

IRFI730G

Abstract: SiHFI730G SiHFI730G-E3
Contextual Info: IRFI730G, SiHFI730G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • Dynamic dV/dt Rating • Low Thermal Resistance