16EDO Search Results

IBM038329PQ6256

Abstract: IBM038329NQ6256
Contextual Info: IBM038329PQ6256 x 16FP, 2WE. IBM038329NQ6256 x 16EDO, 2WE. Preliminary IBM038329PQ6 IBM038329NQ6 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on positive edge of system clock. • Internal pipelined operation; column address

015161LJ3A-50

Abstract: IBM015160256 IBM015161256
Contextual Info: IBM015160256 x 16FP, 2WE. IBM015161256 x 16EDO, 2WE. IBM015160 IBM015161 256K X 16 DRAM Features • 256K x 16 DRAM • 66MHz EDO performance • Performance: • Non-Persistent WPBM mode Parameter -40 -50 -60 tRP RE Precharge 20ns 25ns 30ns tCAC Access Time from CE

diode Lz 66

Abstract: IBM038329NQ6256 IBM038329PQ6256 IBM038329NP6B
Contextual Info: IBM038329PQ6256 x 16FP, 2WE. IBM038329NQ6256 x 16EDO, 2WE. IBM038329NL6B IBM038329NP6B 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on positive edge of system clock. • Internal pipelined operation; column address

IBM025161

Abstract: IBM025161LG5D-6 BM025 IBM025161LG5D-6H IBM025170 ibm025161lg5d-60 ibm025171 IBM025161LG5D60 IBM025170LG5D-60 IBM025171NG5D-60
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

IBM025161LG5D60

Abstract: vram dual port IBM025161 IBM025170 "Video RAM" BM025 ibm025170lg5 IBM025161LG5D-6H IBM025171256 IBM025160256
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

Contextual Info: M O S E L VITELIC V53C16258L H IG H PERFORMANCE 3 .3 VOLT2 5 6 K X 16EDO PAG E M ODE CMOS DYNAMIC RAM PRELIM INARY 40 45 50 60 Max. RAS Access Time, Irac 40 ns 45 ns 50 ns 60 ns Max. Column Address Access Time, (^ aa) 20 ns 22 ns 24 ns 30 ns Min. Fast Page Mode Cycle Time, (1pC)

IBM025160

Abstract: IBM025160256 IBM025161 IBM025161256 IBM025170256 IBM025171256 IBM025171N
Contextual Info: IBM025160256 x 16FP, 2CE. IBM025171256 x 16EDO, 2WE. IBM025170256 x 16FP, 2WE. IBM025161256 x 16EDO, 2CE. IBM025160 IBM025170 IBM025161 IBM025171 256K X 16 MULTIPORT VIDEO RAM Features • 256K x 16 Multiport Video RAM • 50 MHz EDO performance • Performance:

Contextual Info: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )

mt4lc4m16r6

Contextual Info: PRELIMINARY 4 M E G x 16 EDO DRAM I^ IIC R D N MT4LC4M16R6 DRAM FEATURES • Single +3.3V ±0.3V power supply • Industry-standard x l6 pinout, timing, functions and package • 12 row, 10 column addresses • High-performance CMOS silicon-gate process • All inputs, outputs and clocks are LVTTL-compatible

5116 ram

Abstract: HYB5118165BSJ-50 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-60 HYB5118165BSJ-70 TRAC-70
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

5116 ram

Abstract: Q67100-Q1107 HYB5116165BSJ-50 HYB5116165BSJ-60 HYB5116165BSJ-70 HYB5118165BSJ HYB5118165BSJ-50 HYB5118165BSJ-60 HYB5118165BSJ-70
Contextual Info: 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode- EDO HYB5116165BSJ -50/-60/-70 HYB5118165BSJ -50/-60/-70 Advanced Information • • • • • • • • • • • • 1 048 576 words by 16-bit organization 0 to 70 °C operating temperature

5116 RAM

Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
Contextual Info: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)

Contextual Info: SIEMENS 1 M x 1 6 - B it D y n a m ic R A M H Y B 5 1 1 6 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 1 k & 4 k R e fre s h H Y B 5 1 1 8 1 6 5 B S J - 5 0 /- 6 0 /- 7 0 H y p e r P a g e M o d e - E D O Prelim inary Inform ation max. 495 active mW ( HYB3116165BSJ-60)

Contextual Info: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time