16E MARKING Search Results

Si7601DN

Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES rDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ) 16.2 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Si7601DN

Abstract: si7601
Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Si7812DN

Abstract: Si7812DN-T1-GE3 Si7812DN-T1-E3
Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI7812DN

Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI7812DN

Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI7812DN

Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si7601DN

Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management

Si7812DN

Abstract: 16e marking Si7812DN-T1-E3 si7812 marking 16e
Contextual Info: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm

SI7812DN

Contextual Info: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm

SI7812DN

Contextual Info: Si7812DN New Product Vishay Siliconix N-Channel 75-V D-S MOSFET PRODUCT SUMMARY VDS (V) 75 FEATURES rDS(on) (W) ID (A) 0.037 @ VGS = 10 V 16e 0.046 @ VGS = 4.5 V 16e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07mm

Si7601DN

Abstract: si7601
Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Contextual Info: New Product Si7601DN Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 20 FEATURES RDS(on) (Ω) ID (A) 0.019 at VGS = - 4.5 V - 16e 0.031 at VGS = - 2.5 V - 16e Qg (Typ.) • Halogen-free Option Available • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

si8406

Contextual Info: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management

SI7812DN

Contextual Info: Si7812DN Vishay Siliconix New Product N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 rDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ) 8 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm

SI7812DN

Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si7812DN-T1-GE3

Abstract: Si7812 Si7812DN Si7812DN-T1-E3
Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

SI7812DN

Contextual Info: Si7812DN Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 75 RDS(on) (Ω) ID (A) 0.037 at VGS = 10 V 16e 0.046 at VGS = 4.5 V 16e Qg (Typ.) 8 nC PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Contextual Info: 1 M E G x 16 EDO DRAM V IIC Z R O N n P A V n * M M T4C 1M 16E 5 \ m M T4L C 1M 16E 5 FEATURES • JEDEC- and industry-standard x l6 tim ing, functions, pinouts and packages • High-perform ance CM OS silicon-gate process • Single pow er supply (+3.3V +0.3V or 5V ±10%

by520

Contextual Info: BY520-14E, BY520-16E www.vishay.com Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction SUPERECTIFIER • 24 mils lead wire diameter

89129

Abstract: BY520 ignition module BY520-14 BY520-16
Contextual Info: BY520-14E, BY520-16E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • 24 mils lead wire diameter • Fast switching for high efficiency

ignition module

Abstract: by520-16 BY520-14EHE3
Contextual Info: BY520-14E, BY520-16E Vishay General Semiconductor Glass Passivated Junction Fast Switching Rectifier FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • 24 mils lead wire diameter • Fast switching for high efficiency

smd transistor marking EY

Abstract: SMD TRANSISTOR MARKING 3211 ahr TRANSISTOR smd transistor SMD S33 ahr11 SMD Transistor 1lm SMD TRANSISTOR MARKING 2Nx SMD TRANSISTOR MARKING 2D transistor kc 2026 dw11
Contextual Info: m&s.lTio2/16E U November 1964 WPFR5S7XNG MIL-B-195C+6D 27 Eecember 1*1 MILITASY SPECITICAT20N TRANSISTOR, GVN, SILICON TTPES 2N3.42, 2NX% , A:lD 2N343 i, mandatory for “8. of the DePart.mnt of Defame. by all ‘211h SDOoifiCd.iorJ Awmim 1. tamlt~ md -E 1.1