1630Y Search Results

ds1630AB-120

Abstract: EEPROM 28256 34-PIN DS1630 DS1630AB DS1630Y ds1630y120
Contextual Info: D S 1630Y /A B DALLAS s e m ic o n d u c to r . 1630Y/AB Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power • Data is autom atically protected during pow er loss • Directly replaces 32K x 8 volatile static RAM or

Contextual Info: D S 1630Y/A B DALLAS s e m ic o n d u c to r FEATURES 1630Y/AB Partitionable 256K NV SRAM PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power A 14 11 1 • Data is automatically protected during power loss A 12 11 • Directly replaces 32K x 8 volatile static RAM or

DS1630AB-120

Contextual Info: 1630Y/AB DALLAS 1630Y/AB SEMICONDUCTOR Partitionable 256K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power Vcc WE • Data is automatically protected during power loss A13 • Directly replaces 32K x 8 volatile static RAM or

DSA0031697.txt

Contextual Info: LED Indicators Miniature Bite Lites Designed for use as function indicators on aircraft, test equipment, machine tools, and wherever severe environmental conditions need to be met, especially vibration and EMI. ML 1620/ML 1630 Environmental Specifications

DS1630AB-100

Abstract: DS1630AB100
Contextual Info: 1630Y/AB DALLAS SEMICONDUCTOR 1630Y/AB Partitionable 256K NV SRAM FEATURES • PIN ASSIGNMENT 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x EEPROM 8 volatile static RAM or

3610 dallas

Contextual Info: D 1630Y/AB DALLAS 1630Y/AB Partitionable 256K NV SRAM SEMICONDUCTOR FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or

Contextual Info: 1630Y/AB DALLAS 1630Y/AB Partitioned 256K NV SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Data retention in the absence of V^c • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAMs or EEPROMs • Write protects selected blocks of memory regardless

DS1630AB-120

Abstract: DS1630AB-100 DS1630AB120
Contextual Info: 1630Y/AB DALLAS D S 1 6 3 0 Y /A B Partitionable 256K NV SRAM SEMICONDUCTOR PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 32K x 8 volatile static RAM or