16165 Search Results

MG25N2YS1

Abstract: mg25n2
Contextual Info: TOSHIBA O I S C R E T E / O P T O J _ ^0 9 0 9 7 2 5 0 TO SH IBA D IS C R E T E / O P T O TO SH IBA P E I ‘ìCHTgSO 0 0 1blfc,5 D I 90D 16165 SEMICONDUCTOR -f~33~27 TOSHIBA GTR MODULI; MG25N2YS1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS.

Contextual Info: MEMORY 1 M x 16 BIT HYPE:R pAGE M 0 DE DY NAMIIC R A M MB81 16165B -5 0/-6i0=^ • W l m m r V r R 1 ■ w V r V r . \ r / V CMOS 1,048,576 x 16 Bit Hyper Page Mode Dynamic RAM ■ DESCRIPTION The Fujitsu 16165B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory

Contextual Info: 16165-r200-110-B3 04.08.2004 17:25 Uhr Seite 2 - 116 RAFIX 22 QR RAFIX 22 QR keylock switch panel cut-out acc. to IEC 60947-5-1 2 Technical data General information Form of lens Colout of front ring Form of collar RAFIX 22 QR Dimensions Length of collar Width of collar

rft electronica

Contextual Info: HM52161 65 Series Preliminary 524,288-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI A ll inputs and outputs arc referred to the rising edge of the clock input. The H M 5 2 16165 is offered in 2 banks for improved performance. Features Rev. 0.0 Jul. 2 9 ,1 9 9 4

GD312A

Contextual Info: 16165A Series HM51W18165A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI ADE-203-372B Z Rev. 2.0 Jul. 2, 1996 Description The Hitachi H M 51W 16165A Series, H M 51W 18165A Series are CMOS dynamic RAM s organized as 1,048,576-w ordx 16-bit.

65G5

Abstract: NEC 4216165-60
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD42S 16165, 16165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE Description The /¿16165, 16165 are 1,048,576 w ords by 16 bits CM OS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.

HM51W16165ATT-7

Contextual Info: 16165A Series 1048576-word x 16-bit Dynamic Random Access Memory HITACHI AD E-203-372A Z Rev. 1.0 Dec. 15, 1995 Description The Hitachi HM 51W 16165A is a CMOS dynamic RAM organized a$ 1,048,576-word x 16-bit. It employs the most advanced CMOS technology for high performance and low power. The HM 51W 16165A offers

M51W

Contextual Info: 16165 Series HM51W18165 Series 16 M EDO DRAM 1-Mword x 16-bit 4 k Refresh/1 k Refresh HITACHI ADE-203-650D (Z) Rev. 4.0 Nov. 1997 Description The Hitachi HM 51W 16165 Series, HM 51W 18165 Series are CM OS dynam ic RAMs organized as 1,048,576-word X 16-bit. They employ the m ost advanced CMOS technology for high performance and

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / ¿¿PD42S 16165L , 4 2 16 16 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The /iP D 42S 16165L, 16165L are 1,048,576 words by 16 bits CMOS dynam ic RAMs with optional hyper page

msm5116165a

Contextual Info: O K I Semiconductor MSM5 1 16165 A 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 16165A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The 16165A achieves high integration, high-speed operation, and low-power

pushbutton emergency stop

Abstract: EN418 IEC-60073
Contextual Info: 16165-r200-120-B1 30.07.2004 10:20 Uhr Seite 2 - 120 RAFIX 22 QR RAFIX 22 QR mushroom-headed pushbutton Pict.: Front ring, metallized 2 panel cut-out acc. to IEC 60947-5-1 Technical data General information Form of lens Colour of mushroom Colout of front ring

Contextual Info: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿16165L, 16165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WOFD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE Description The 16165L, 42 16165Lare 1 048 576 w o rd s by 16 b its d yn a m ic C MOS R A M s w ith o p tio n a l h yp e r page

HD44780

Abstract: LED04
Contextual Info: 16 CHARACTERS X 1 LINE MDL S -16165 CHARACTER SIZE: 2.65W X 4.80H mm (5 X 7 DOTS) 2.65W X 5.50H m m (5 X 8 DOTS) 10.0 MAX 2.65 0.45 5.50 0.45 oCO □□□□□ □ □□□□□ □ □□□□□ □ □□□□□ □ □□□□□ □ □□□□□ □

IEC 947-7-1 terminal block 400v

Abstract: FUSE ZKS DATASHEET 1720870000 BL-177 zdu2.5 MARKING ZTW H07V-K 1690060000 35 ZDU ZDU16
Contextual Info: Z-series 58 Z-series Reliability has got a name… Electrical connection … Handling … Z-Roof - the compact alternative … • Practical connection due to parallel insertion of screwdriver and conductor – TOP-connection • No special tool necessary

Contextual Info: KN 19 short-travel main switch General data Short-travel main switch for use in membrane keyboards under the overlay or with RK 90 keycaps, 250V, 4A max. A cutout in the overlay is not required! Content KN 19 short-travel main switch KN 19 4 - 76 4 - 78 4

Contextual Info: HB56HW164EJN Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-696B Z Rev.2.0 May. 30, 1997 Description The HB56HW164EJN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 4 and 8 Byte processor applications. The

Contextual Info: HB56HW164DB-6BL/7BL 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-570 Z Preliminary- Rev.0.0 Apr. 18,1996 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (16165BLTT) sealed in TSOP package and 1

delta dps 298 cp 2A

Abstract: bcm 5241 a dms map ntt bc 574 crossreferences A6-A15 BMS 13-60 wire xxnx
Contextual Info: MPC8349E PowerQUICC II Pro Integrated Host Processor Family Reference Manual Supports MPC8349E MPC8347E MPC8343E MPC8349E Rev. 1 8/2005 How to Reach Us: Home Page: www.freescale.com email: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor

philips lcd 15.4 pinout

Abstract: mbus master broadcom switch D14290 lt 8219 CQ 523
Contextual Info: MSC8154 Reference Manual Quad Core Digital Signal Processor MSC8154RM Rev 0, September 2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

Contextual Info: M O SEL VITELIC 1616500 3.3 VOLT 1 M X 16 EDO PAGE MODE CMOS DYNAMIC RAM HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, Irac 50 ns 60 ns 70 ns Max. Column Address Access Time, (^ aa) 25 ns 30 ns 35 ns Min. Extended Data Out Page Mode Cycle Time, fcc)

Contextual Info: MQFL-28-3R3S Single Output HIGH RELIABILITY DC/DC CONVERTER 16-40V 16-50V Continuous Input Transient Input 3.3V Output 30A Output F U L L P O W E R O P E R AT I O N : - 5 5 º C 89% @ 15A / 88% @ 30A Efficiency TO +125ºC T he Mi l Qo r s e r i e s o f h i g h - r e l i a b i l i t y D C / D C c o n v e r t e r s b r i n g s

Contextual Info: MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 6 1 6 5 L , 4 2 1 6 1 6 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE D escription The ì ì 16165L, 16165Lare 1 048 576 w ords by 16 bits dynamic CMOS RAMs w ith optional hyper page

lg e 1941 lcd monitor circuit diagram

Abstract: 2M22A GDE 4C STR G 6351 GIGABYTE G41 P22-P27 MC68360 MPC821 PA15 "Continuous phase modulation" cpm "white" "filter" demodulator
Contextual Info: PowerPC MPC821 Portable Systems Microprocessor User’s Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

Contextual Info: 11.10.2003 8:06 Uhr Seite C.1 Terminals / Tension clamp connection Terminals / Z-Series Overview / Z-Series C.2 - C.3 Feed-through terminals Standard model Roof-Style C.4 - C.17 C.18 - C.23 PE terminals Standard model Roof-Style C.24 - C.31 C.32 - C.37 Disconnect terminals