161 0M Search Results

FMMT493ATA

Contextual Info: FMMT493A SOT23 60V NPN SILICON PLANAR MEDIUM POWER PLANAR TRANSISTOR NPN: VCEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: This 60V NPN transistor provides users with performance combining low saturation and high hFE with a continuous current capability of 1A, ensuring

486 SX

Abstract: 272769
Contextual Info: * EMBEDDED lntel486TM SX PROCESSOR • 32-Bit RISC Technology Core ■ Boundary Scan JTAG ■ 8-Kbyte Write-Through Cache ■ 3.3-Volt Processor — 208-Lead Shrink Quad Flat Pack (SQFP) ■ Four Internal Write Buffers ■ Burst Bus Cycles ■ Dynamic Bus Sizing for 8- and 16-bit

MS-026

Abstract: TSB12LV21B
Contextual Info: TSB12LV21B, TSB12LV21BI PCILynx-2 IEEE 1394 LINK LAYER CONTROLLER SLLS306A – JULY 1998 – REVISED JANUARY 2001 D D D D D D D D D D D IEEE Standard for 1394-1995 Compliant IEEE Standard for 1212-1991 Compliant Supports IEEE 1394-1995 Link Layer Control

Contextual Info: FPF2213-FPF2215 tm Integrated Load Switch with Adjustable High Precision Current Limit Features General Description 1.8 to 5.5V Input Voltage Range Typical RDS ON = 250 m @ VIN = 5.5V Typical RDS(ON) = 275m @ VIN = 3.3V The FPF2213-FPF2215 are low RDS(ON) P-Channel MOSFET

MSM6606

Abstract: MSM6606GS-BK 151C4 QFP64-P-1414
Contextual Info: O K I Semiconductor MSM6606 8O-DOT LCD DRIVER WITH KEY MATRIX G ENERAL DESCRIPTIO N MSM6606 is an LCD driver for a 1 /2 duty dynamic display, that can directly drive an LCD for up to 80 segments, and one LED. Due to an internal 5 x 6 keyscan circuit, keyboard input

K73 Package

Abstract: 3 phase inverter schematic diagram 7C166 CY7C164A CY7C166A CI64A CY7C164A-45DMB
Contextual Info: 4bE D CYPRESS SEM IC ON DU CT OR □ - p q & eSÛ'IbbE OQObMfiS 2 R3CYP .r S - l O C Y 7 C I6 4 A C Y 7 C 1 6 6 A ";ui'./^CTPRESS , _ SEMICONDUCTOR 16,384 x 4 Static R/W RAM Features Functional Description • Automatic power-down when

Contextual Info: Ordering number :EN3861 CMOS LSI LC78840M SA\YO Four-times or Eight-times Oversam pling _ Digital Filter i "V PINOUT O VERVIEW Tte LC78840M is a four-times or eight-times oversam­ pling digital Alter for Broadcast Satellite B S r Compact

Contextual Info: 168PIN PC133 Unbuffered DIMM 256MB With 32M X 8 CL3 TS32MLS64V6F Description Placement The TS32MLS64V6F is a 32M x 64bits Synchronous Dynamic RAM high-density for PC-133. The TS32MLS64V6F consists of 8pcs CMOS 32Mx8 bits Synchronous DRAMs in TSOP-II 400mil packages and

Contextual Info: 168PIN PC133 Registered DIMM 256MB With 32Mx4 CL3 TS32MLR72V6B Description Placement The TS32MLR72V6B is a 32M bit x 72 Synchronous Dynamic RAM high-density memory registered DIMM module. The TS32MLR72V6B consists of 18pcs 32Mx4 bits Synchronous DRAMs; 3pcs drive ICs for

KU80486SX

Abstract: 240486 KU80486SXSA33 ku80486 272769 240950 A80486SXSA33 SL ENHANCED I486 D1542 a80486sx
Contextual Info: Embedded Intel486 SX Processor Datasheet Product Features • ■ ■ ■ ■ 32-Bit RISC Technology Core 8-Kbyte Write-Through Cache Four Internal Write Buffers Burst Bus Cycles Dynamic Bus Sizing for 8- and 16-bit Data Bus Devices SL Technology ■ ■

b1a12

Abstract: M390S2950MTU M390S2950MTU-C1H M390S2950MTU-C1L M390S2950MTU-C75 PC133 registered reference design
Contextual Info: Preliminary PC133/100 Low Profile Registered DIMM M390S2950MTU M390S2950MTU SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 128Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S2950MTU is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2950MTU consists of eighteen CMOS 128Mx4 bit

M377S2953MT3

Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
Contextual Info: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit

78lq5

Abstract: 78l00 78L12CS 78L05ACS 78L05ACDB 78L12ACD 78L12 78L05CS IN4149 A78L
Contextual Info: MA78L02/5/6/8/12/15-DB.S DESCRIPTION FEATURES The fiA78L00 series of 3-Terminal Positive Voltage Regulators employ internal current lim iting and thermal shutdown, making them essentially indestructible. If adequate heat sinking is provided, they candeliverup

Contextual Info: 168PIN PC133 Registered DIMM 512MB With 32M X8 CL3 TS64MLR72V6F Description Placement The TS64MLR72V6F is a 64M bit x 72 Synchronous Dynamic RAM high-density memory registered DIMM module. The TS64MLR72V6F consists of 18pcs 16Mx8 bits Synchronous DRAMs, 3pcs drive ICs for

Contextual Info: 214PIN DDR2 533 Micro-DIMM 256MB With 32Mx16 CL4 TS32MMQ64V5M Description Placement The TS32MMQ64V5M is a 32M x 64bits DDR2-533 J Micro-DIMM. The TS32MMQ64V5M consists of 4pcs 32Mx16bits DDR2 SDRAMs in 84 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723AT2-C1H 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723AT2-C1H is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723AT2-C1H

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723AT2-C1L is a 16M bit X 72 Synchronous Dynamic

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723BT2-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723BT2-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723BT2-C75

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323CT2-C75 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323CT2-C75 is a 32M bit X 72 Synchronous Dynamic

lcd Inverter Delta

Abstract: 339H International Power Sources BHR-03VS-1 PA035XUJ
Contextual Info: PA035XUJ Version : 1.0 TECHNICAL SPECIFICATION MODEL NO. : PA035XUJ Customer’s Approved Customer Date By PVI’s Confirmation Approved By Prepared By FOR MORE INFORMATION: AZ DISPLAYS, INC. 75 COLUMBIA, ALISO VIEJO, CA, 92656 Http://www.AZDISPLAYS.com Date : Jan 10, 2005

MN1610

Abstract: MN1600 MN1610A MN1640 b511 e 4c 3329C MN1640A MN1650 b514 sfe 5,5 ma
Contextual Info: MN 1640, MN1640A z> y£°zL— s? MN1 6 4 0 , MN1 6 4 0 A \ > Y u # - = 7 — Real T im e S y s t e m C o n t r o ll e r s ( S i n g l e V o lt a g e Supply I AS MN1640, S /D e sc rip tio n MN1640A i t , Unit ' mm 16 f 7 f v - i ? n 3 > f i - ; x X r A n >

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1623AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 8M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1623AT2-C1L is a 16M bit X 72 Synchronous Dynamic

Contextual Info: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323ATE-C1H/H 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323ATE-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory