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160D10
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D12
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D120
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D16
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D20
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D24
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D28
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D34
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D40
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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160D56
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Hammond Manufacturing
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Power Transformers, Transformers, XFRMR LAMINATED 1VA THRU HOLE |
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2EZ160D5
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode in DO-41 package, 2.0W power dissipation, 3.6 to 200V voltage range, ±5% tolerance, low leakage current, high reliability, suitable for single-phase half-wave applications at 60Hz.Axial leaded silicon Zener diode in DO-41 package with 2.0W power dissipation, 3.6 to 200V voltage range, color band indicating cathode, and operating junction temperature from -55 to +175°C. |
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3EZ160D5L
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SUNMATE electronic Co., LTD
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Axial leaded silicon zener diode with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diode 3EZ3.9D5L to 3EZ400D5L with 3.0W power dissipation, voltage range 3.9V to 400V, low leakage current, high reliability, and DO-15 package.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package.Axial leaded silicon Zener diodes with power dissipation of 3.0W, voltage range from 3.9V to 400V, low leakage current, high reliability, and complete series from 3EZ3.9D5L to 3EZ400D5L.Axial leaded silicon Zener diode 3EZ3.9D5L with 3.0W power dissipation, 3.9V to 400V voltage range, low leakage current, high reliability, and ±5% tolerance, suitable for general purpose regulation and protection applications.Axial leaded silicon zener diode with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and DO-15 package. |
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2EZ160D5L
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6V to 200V zener voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-15 package with 2.0W power dissipation, 3.6 to 200V voltage range, low leakage current, and ±5% tolerance option. |
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NCE82H160D
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NCEPOWER
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NCE82H160D is an N-channel enhancement mode power MOSFET with 82V drain-source voltage, 160A continuous drain current, and low RDS(ON) of 3.6mΩ typical at VGS=10V, suitable for high-frequency switching applications. |
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3EZ160D5
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SUNMATE electronic Co., LTD
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Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance indicated by suffix 5.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, and ±5% tolerance option, suitable for high reliability applications.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance option.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, and ±5% tolerance indicated by suffix ""5"".Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, operating voltage range 3.9 to 400V, low leakage current, high reliability, and ±5% tolerance indicated by suffix ""5"".Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, and high reliability for general-purpose regulation.Axial leaded silicon Zener diode in DO-41 package with 3.0W power dissipation, 3.9 to 400V voltage range, low leakage current, high reliability, and UL94V-0 rated epoxy coating.3EZ3.9D5 - 3EZ400D5 axial leaded silicon Zener diodes in DO-41 package, 3.0W power dissipation, 3.9V to 400V zener voltage range, low leakage current, high reliability, epoxy UL94V-0 rated, operating junction temperature -55 to +175°C.Silicon Zener diode in DO-41 package with axial leads, 3.0W power dissipation, voltage range 3.9V to 400V, color band indicating cathode, and UL94V-0 rated epoxy mold. |
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2EZ160D5
