160 GERMANIUM TRANSISTOR Search Results

TI159

Abstract: TI-162 AF267 Germanium Transistor Texas Germanium 160 germanium transistor
Contextual Info: TYPES TI159, TI 160, TI 161, TI162 P-N-P ALL0Y-JUNCTI0N GERMANIUM MEDIUM-POWER TRANSISTORS NO. DL-S 634413, DECEMBER 1963 The transistors a re in h erm etically-sealed w e ld e d leads. A p p ro x im a te weight: 4.8 gram s. cases with glass-to-m etal seals betw een case a n d

DTG-600

Abstract: DTG-2400 2N2733 DTG-1010 2N4278 DTG-110B 2N4277 2N4280 dtg 600 DTG-601
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number CURRENT GAIN Case Type Vc.„ V V ceo MT-23 MT-23 MT-22 MT-22 MT-22 60 40 80 60 40 45 30 60 45 30 2N4276 2N4277 2N4278 2N4279 2N4280 TO-3 TO-3 TO-3 TO-3 TO-3 30 30 45 45 60 20 20 30 30 45 20 20 25 25 30 30 30 45 45 60

transistor marking N1

Abstract: BFU725F JESD625-a LNB ka band 160 germanium transistor ka-band mixer DRO lnb germanium transistors NPN ka band lna nxp DC to microwave
Contextual Info: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 01 — 13 July 2009 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

1N4785

Abstract: 2N5155 2N2526 2N3731 2N2147 2N2832 MP1612 2N3732 2N2148 2N2527
Contextual Info: GERMANIUM POWER TRANSISTORS Type N um ber M in. Derate J to C W /° C A B S O L U T E M A X . R A T IN G S Ic A I» A f>Kao V B V cto V B V cco V M ax. I cbo @ Max. Vco @ 25 °C A Ah Bias Va V Ic A Min. M ax. f Hz M ax. Sat. Res. Q M ax. Pc Free A ir 9 2S°C

1N4785

Abstract: 2N2147 MP1612B 2N2526 2N2148 2N2832 2N3731 Germanium Power Devices 2n2834 2N3730 2N5435
Contextual Info: GERMANIUM POWER TRANSISTORS Type Number Min. Derate JtoC W/°C ABSOL UTE MAX. RA TINGS Ic A b A BVcbo V BVC, „ V BVceo V Max. Icbo @ Max. V co @ 2S°C A hfc V„ V Bias Ic A Min. Max. Hl Max. Sat. Res. 2 Max. Pc Free Air @ 2S°C W .03 .03 .03 85 85 85

transistor marking N1

Abstract: LNB ka band Germanium power
Contextual Info: BFU725F/N1 NPN wideband silicon germanium RF transistor Rev. 2 — 3 November 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

transistor K52

Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
Contextual Info: EDISW A N MAZDA X C IO I AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE GEN ERAL The X C IO I is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can.

BFU725F

Abstract: JESD625-A germanium rf transistor code marking s20 TRANSISTOR germanium transistor germanium transistors NPN SOT343F germanium transistor npn LNB ka band Germanium power
Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 01 — 6 December 2007 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU725F

Abstract: germanium transistors NPN DRO lnb ka-band mixer Germanium diode data sheet germanium npn nxp power microwave transistor RF Transistor reference JESD625-A Germanium power
Contextual Info: BFU725F NPN wideband silicon germanium RF transistor Rev. 02 — 23 June 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Germanium Transistor

Abstract: Germanium power ON5088,115
Contextual Info: ON5088 NPN wideband silicon germanium RF transistor Rev. 3 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

2.4 ghz transistor wifi amplifier

Abstract: Germanium power 160 germanium transistor wifi lna Ghz dB transistor
Contextual Info: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.1 — 16 November 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

ON5088

Abstract: germanium NPN germanium transistors NPN JESD625-A SOT343F dielectric resonator oscillator NPN RF Transistor Germanium power
Contextual Info: ON5088 NPN wideband silicon germanium RF transistor Rev. 01 — 22 April 2010 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU760F

Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
Contextual Info: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

2.4 ghz transistor wifi amplifier

Abstract: Germanium power
Contextual Info: BFU768F NPN wideband silicon germanium RF transistor Rev. 1.2 — 24 December 2012 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Contextual Info: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

marking s20 SMD Transistor

Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
Contextual Info: 62 7  & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.

2N600

Abstract: Germanium PNP - Low Power Transistors
Contextual Info: 2N600 Ge PNP Lo-Pwr BJT 8.25 Transistors Bipolar Germanium PNP L. 1 of 2 Home Part Number: 2N600 Online Store 2N600 Diodes G e PNP Lo - Pw r BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

2N2156

Abstract: 2N2152 2N2153 2N2154 2N215 2N2157 2N2158 Germanium power
Contextual Info: 2N21 52. THRU 2N2154 2N2156 THRU 2N2Ì58 '«frifcI Ä »% §&#*•##%151%gf#i i%» »% |#-r ♦I ¡rf Central Sem iconductor Corp. Central semiconductor Corp. GERMANIUM PNP POWER TRANSISTOR 170 WATTS 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 JEDEC TO-36 CASE

2N2832

Abstract: 2N2833 2N2834 MP1612B 2n2526
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 GERMANIUM POWER TRANSISTORS Typ* Himbfr Mia, Dtmtt JtoC we ABSOLUTE MAX. RATINGS Ic A I. A BVefa V 6V,*, V BK . V Mat. la. 9 Mm. va M°C A YC,

BFU610F

Abstract: SOT343F germanium rf transistor germanium power devices corporation Mifare PLUS X Germanium power
Contextual Info: BFU610F NPN wideband silicon germanium RF transistor Rev. 01 — 17 June 2010 Objective data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

BFU790F

Abstract: JESD625-A Germanium power
Contextual Info: BFU790F NPN wideband silicon germanium RF transistor Rev. 1 — 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

transistor zs 35

Abstract: Germanium power
Contextual Info: BFP740F XYs NPN Silicon Germanium RF Transistor* • High gain ultra low noise RF transistor 3 • Provides outstanding performance for a wide range 2 4 of wireless applications up to 10 GHz 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.5 dB at 1.8 GHz

JESD625-A

Abstract: BFU710F DRO lnb Germanium power
Contextual Info: BFU710F NPN wideband silicon germanium RF transistor Rev. 1 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

germanium transistor ac 125

Contextual Info: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.