16-BIT SYNCHRONOUS COUNTER Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE7E MEMORY CMOS 2 x 512 K x 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-60/-70/-80 CMOS 2-Bank x 524,288-Word x 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

A43L0616A

Abstract: A43L0616AV
Contextual Info: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001

2 Banks x 512K x 16

Abstract: A43L0616A A43L0616AV
Contextual Info: A43L0616A 512K X 16 Bit X 2 Banks Synchronous DRAM Document Title 512K X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. History Issue Date Remark 0.0 Initial issue December 4, 2000 Preliminary 0.1 Add input/output capacitance specification February 13, 2001

A43L1616

Abstract: A43L1616V
Contextual Info: A43L1616 Preliminary 1M X 16 Bit X 2 Banks Synchronous DRAM Document Title 1M X 16 Bit X 2 Banks Synchronous DRAM Revision History Rev. No. 0.0 PRELIMINARY History Issue Date Remark Initial issue August 2, 2005 Preliminary August, 2005, Version 0.0 AMIC Technology, Corp.

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11042-1E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F641642B-103E/-103/-10/-103L/-10L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION

dba1

Abstract: VG3617161DT
Contextual Info: VG3617161DT 1,048,576 x 16 - Bit CMOS Synchronous Dynamic RAM VIS Description The VG3617161DT is CMOS Synchronous Dynamic RAM organized as 524,288-word X 16-bit X 2-bank. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 3.3V

MB81F161622B-102

Abstract: MB81F161622B-75
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11039-2E MEMORY CMOS 2 x 512 K × 16 BIT SYNCHRONOUS DYNAMIC RAM MB81F161622B-75/-102/-103 CMOS 2-Bank × 524,288-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F161622B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

Contextual Info: A43L3616A Series 2M x 16 Bit x 4 Banks Synchronous DRAM Preliminary Document Title 2M x 16 Bit x 4 Banks Synchronous DRAM Revision History History Issue Date Remark 0.0 Initial issue August 7, 2007 Preliminary 0.1 Change clock frequency from 133MHz to 143MHz at 7ns cycle

MB811641642A

Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-11029-2E MEMORY CMOS 4 x 1 M × 16 BIT SYNCHRONOUS DYNAMIC RAM MB811641642A-100/-84/-67/-100L/-84L/-67L CMOS 4-Bank × 1,048,576-Word × 16 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION

PD45128163

Abstract: PD45128163G5-A10-9JF PD45128163G5-A75-9JF PD45128163G5-A75A-9JF PD45128163G5-A75L-9JF PD45128163G5-A80-9JF PD45128163G5-A80L-9JF
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.

PD45128163

Abstract: uPD45128163G5-A75-9JF-E
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-E 128M-bit Synchronous DRAM 4-bank, LVTTL Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 word × bit × bank . The synchronous DRAM achieved high-speed data transfer using the pipeline architecture.

A43L2616

Abstract: A43L2616V 1M x 16-Bit x 4 Banks synchronous DRAM
Contextual Info: A43L2616 1M X 16 Bit X 4 Banks Synchronous DRAM Document Title 1M X 16 Bit X 4 Banks Synchronous DRAM Revision History History Issue Date 0.0 Initial issue August 9, 2001 1.0 Add -V grade November 26,2001 2.0 Add -5.5 spec January 4,2002 3.0 Add Full Page Mode

74LS169A

Abstract: 74LS168A 74S168A S168A 74S169
Contextual Info: 74LS168A, 74LS169A, S168A, S169A Signetics 4-Bit Bidirectional Counters 4-Bit Up/Down Synchronous Counter Product Specification Logic Products FEATURES • Synchronous counting and loading • Up/down counting • Modulo 16 binary counter — '169A • BCD decade counter — ' 168A

Contextual Info: 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer

uPD45128163G5-A75LT-9JF

Abstract: PD45128163 uPD45128163G5-A10LT-9JF uPD45128163G5-A10T-9JF uPD45128163G5-A75T-9JF uPD45128163G5-A80LT-9JF uPD45128163G5-A80T-9JF PD45128163-T
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD45128163-T 128M-bit Synchronous DRAM 4-bank, LVTTL WTR Wide Temperature Range Description The µPD45128163 is high-speed 134,217,728-bit synchronous dynamic random-access memory, organized as 2,097,152 x 16 × 4 (word × bit × bank).

MSM56V16160D

Abstract: MSM56V16160D-10 MSM56V16160D-12 MSM56V16160DH-15
Contextual Info: Pr E2G1049-18-33 el im y 2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The

VG36128161

Abstract: VG36128161A VG36128401A VG36128801 VG36128801A
Contextual Info: VIS Preliminary VG36128401A VG36128801A VG36128161A CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 8,388,608 - word x 4 -bit x 4 - bank, 4,194,304 - word x 8 - bit x 4 - bank, or 2,097,152 - word x 16 - bit x 4 - bank. These various organizations

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4482163, 4482183, 4482323, 4482363 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD4482163 is a 524,288-word by 16-bit, the µPD4482183 is a 524,288-word by 18-bit, µPD4482323 is a 262,144word by 32-bit and the µPD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS

TRANSISTOR A75

Abstract: 100-PIN
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD4382162, 4382182, 4382322, 4382362 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION SINGLE CYCLE DESELECT Description The µPD4382162 is a 524,288-word by 16-bit, the µPD4382182 is a 524,288-word by 18-bit, µPD4382322 is a 262,144word by 32-bit and the µPD4382362 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS

TC59S1616

Abstract: TC59S1616AFT TC59S1608AF
Contextual Info: T O S H IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 524,288-WORD X 2 BANK X 16-BIT SYNCHRONOUS DYNAMIC RAM 1,048,576-WORDx2 BANKx8-BIT SYNCHRONOUS DYNAMIC RAM

G530T

Contextual Info: •HYUNDAI H Y 6 7 1 6 1 1 0 / 1 Ì 1 64K X 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD45128441, 45128841, 45128163 128M-bit Synchronous DRAM 4-bank, LVTTL Description The ,uPD45128441, 45128841, 45128163 are high-speed 134,217,728-bit synchronous dynamic random-access memories, organized as 8,388,608 x 4 x 4, 4,194,304 x 8 x 4, 2,097,152 x 16 x 4 word x bit x bank , respectively.

Contextual Info: H Y 6 7 V 1 6 1 1 0 /1 1 1 HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIM INARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and Non-pipelined output. All synchronous inputs pass through registers controlled by a

uPD4516161AG5-A80-9NF

Contextual Info: DATA SHEET NEC / MOS INTEGRATED CIRCUIT juPD4516421 A, 4516821 A, 4516161A for Rev. P 16M-bit Synchronous DRAM Description The /¿PD4516421 A, 4516821 A, 4516161A are high-speed 16,777,216-bit synchronous dynamic random-access memories, organized as 2,097,152 x 4 x 2, 1,048,576 x 8 x 2 and 524,288 x 16 x 2 word x bit x bank , respectively.