16 X 8 BIT EEPROM Search Results

CompactCellTM Static RAM

Contextual Info: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS

iD9BA

Contextual Info: ADVANCED INFORMATION MX29LW160T/B 16M-BIT [2M x 8 / 1M x 16 or 1M x 16] ONLY CMOS SINGLE VOLTAGE PAGEMODE FLASH EEPROM FEATURES • • • • • • Supply voltage range: 2.7V to 3.6V 1M word x 16 Bit or 2M Byte x 8 Bit Fast access time: 70ns/90ns 15mA maximum active current

DS42514

Contextual Info: DS42514 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42515

Contextual Info: DS42515 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL164D Bottom Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42546

Contextual Info: DS42546 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL163D Top Boot 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DS42587

Abstract: AM29DL323
Contextual Info: DS42587 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL323D Top Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 Mb x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

Contextual Info: M93C86-x M93C76-x M93C66-x M93C56-x M93C46-x 16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit 8-bit or 16-bit wide MICROWIRE serial access EEPROM Datasheet - production data • READY/BUSY signal during programming  2 MHz clock rate  Sequential read operation

DS42516

Contextual Info: DS42516 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL324D Bottom Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DL322

Abstract: DL323 DL324
Contextual Info: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

ST93C06

Abstract: ST93C06C AI00816B
Contextual Info: ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit 16 x 16 or 32 x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION DUAL ORGANIZATION: 16 x 16 or 32 x 8 BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS SELF-TIMED PROGRAMMING CYCLE with

Contextual Info: PRELIMINARY Am42DL6404G Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL640G 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

M420000000

Abstract: FSB073 3FE00
Contextual Info: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector

79LV0408

Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural

transistor comparison data sheet

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation

79LV0408

Abstract: Maxwell 79lv0408
Contextual Info: 79LV0408 Low Voltage 4 Megabit 512k x 8-bit EEPROM CE1 CE2 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 I/O0-7 Logic Diagram Memory FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural

Contextual Info: 79C0408 4 Megabit 512k x 8-bit EEPROM MCM CE2 CE1 CE3 CE4 RES R/B WE OE A0-16 128K x 8 128K x 8 128K x 8 128K x 8 Memory I/O0-7 Logic Diagram FEATURES: DESCRIPTION: • Four 128k x 8-bit EEPROMs MCM • RAD-PAK radiation-hardened against natural space radiation

93C56 em

Contextual Info: M ic r o c h ip 93C56/66 2K/4K 5.0V CMOS Serial EEPROM FEATURES PACKAGETYPE • Low power CMOS technology • ORG pin selectable memory organization - 256 x 8 or 128 x 16 bit organization 93C56 - 512 x 8 or 256 x 16 bit organization (93C66) • Single 5 volts only operation

Contextual Info: / r : SGS-THOM SON * 7 # , H 0M ILI« M 0(g§ ST93C06 ST93C06C SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 or 32 x 8 ■ BYTE/WORD and ENTIRE MEMORY PROGRAMMING INSTRUCTIONS

8032H

Abstract: LQFP-32 MCS-51 T81L0010B T81L0010B-AL T81L0010B-BL 8030-H 8029H
Contextual Info: tm TE CH Preliminary T81L0010B 8-bit MCU with Embedded EEPROM 1. Features 2. General Description ! Compatible with MCS-51 ! Embedded 8K Bytes OTP ROM ! Embedded 1k bits EEPROM ! 256 x 8-bit Internal RAM ! 15 Programmable I/O Lines ! 2 16-bit Timer/Counter & 1 16-bit Timer

Nippon capacitors

Contextual Info: HB56UW272EJN Series, HB56UW264EJN Series HB56UW272EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 72-bit, 2 k Refresh, 1-Bank Module 9 pcs of 2 M X 8 Components HB56UW264EJN 16 MB Unbuffered EDO DRAM DIMM 2-Mword X 64-bit, 2 k Refresh, 1-Bank Module (8 pcs of 2 M X 8 Components)

ST93C06

Abstract: ST93C06C
Contextual Info: / ^ 7 S C S -TH O M S O N Ä 7#. ST93C06 ST93C06C [Mfl @^ I[LIgTlS(S R!lD(gS SERIAL MICROWIRE BUS 256 bit (16 x 16 or 32 x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: 16 x 16 o r 3 2 x 8 ■ BYTE/WORD and ENTIRE MEMORY

Contextual Info: August 1996 Semiconductor NM93C46AL 1024-Bit Serial EEPROM 64 x 16-Bit or 128 x 8-Bit Configurable with Extended Voltage 2.7V to 5.5V (MICROWIRE Bus Interface) General Description Features The NM93C46AL is 1024 hits of CMOS non-volatile electri­ cally erasable memory organized as either 64 16-bit regis­

CA 324G

Abstract: DL322 DL323 DL324
Contextual Info: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES

Nippon capacitors

Contextual Info: HB56HW164DB Series, HB56HW165DB Series HB56HW164DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 4 k Refresh, 1-Bank Module 4 pcs of 1 M X 16 Components HB56HW165DB 8 MB EDO DRAM S.O.DIMM 1-Mword X 64-bit, 1 k Refresh, 1-Bank Module (4 pcs of 1 M X 16 Components)