16 BIT STATIC RAM Search Results

BC244

Abstract: M5M51016BTP A-1540 a1540 A7423
Contextual Info: 9 9 JulJul ,1997 ,1997 MITSUBISHI LSIs LSIs MITSUBISHI M5M51016BTP,RT-10VL, M5M51016BTP,RT-10VL, -10VLL -10VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM

ph44

Abstract: 71V016 IDT71V016
Contextual Info: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM

1m x 16 memory module

Contextual Info: 4 Megabit 256K x 16-bit Static RAM Module LMM4016 DESCRIPTION FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs □ Advanced CMOS Technology □ High Speed, Low Power Consumption □ TTL Compatible Inputs and

IDT71016

Contextual Info: IDT71016 CMOS STATIC RAM 1 MEG 64K x 16-BIT  COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71016 CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times

8M624

Contextual Info: 1 MEGABIT 64K x 16-BIT & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S/IDT8M612S are 1024K/512K-bit high-speed CMOS static RAMs constructed on a multi-layered ceramicsubstrate using four IDT71256 32K x 8 static RAMs (IDT8M624S) or

71V016

Abstract: datasheet for 64K RAM ph44 IDT71V016
Contextual Info: IDT71V016 3.3V CMOS STATIC RAM 1 MEG 64K x 16-BIT COMMERCIAL TEMPERATURE RANGE PRELIMINARY IDT71V016 3.3V CMOS STATIC RAM 1 MEG (64K x 16-BIT) Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 64K x 16 advanced high-speed CMOS Static RAM • Equal access and cycle times

4016 static ram

Abstract: TTL COMPATIBLE 4016
Contextual Info: LOGIC DEVICES INC ELE D m SSÌaSTQS QG012Q5 =1 • _ 4 Megabit 256K x 16-bit Static RAM Module FEATURES □ 4 Megabit (256K x 16-bit) Static RAM Module □ Utilizes 16 L7C197 256K x 1 Static RAMs Q Advanced CMOS Technology Q High Speed, Low Power

IDT7164

Contextual Info: 256K 16K x 16-BIT & 128K (8Kx 16-BIT) CMOS STATIC RAM PLASTIC SIP MODULES IDT 8MP656S IDT 8MP628S FEATURES: DESCRIPTION: • High-density 256K/128K CMOS static RAM modules The IDT8MP656S/IDT8MP628S are 256K/128K-bit high-speed CMOS static RAMs constructed on an epoxy laminate substrate

M5M51016BTP

Abstract: RT-12VL RT-12VLL
Contextual Info: 9 Jul ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-12VL, -12VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-12VL M5M51016BTP,RT-12VLL Access time

MCM6323ATS-12

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6323A Product Preview 64K x 16 Bit 3.3 V Asynchronous Fast Static RAM The MCM6323A is a 1,048,576 bit static random access memory organized as 65,536 words of 16 bits. Static design eliminates the need for external clocks

a1540

Abstract: M5M51016BTP RT-10VL-I
Contextual Info: 99Jul Jul,1997 ,1997 MITSUBISHI LSIs M5M51016BTP,RT-10VL-I, -10VLL-I 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-10VL M5M51016BTP,RT-10VLL Access time (max)

M5M51016BTP

Abstract: RT-70L mitsubishi m5m510
Contextual Info: 99Jul Jul,1997 ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION FEATURES PIN CONFIGURATION (TOP VIEW) ADDRESS INPUTS M5M51016BTP,RT-70L

M5M5W817KT

Contextual Info: MITSUBISHI LSIs 2002.9.3 Ver. 0.0 M5M5W817KT - 70HI 8388608-BIT 524288-WORD BY 16-BIT / 10485776-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M5W817KT is a f amily of low v oltage 8Mbit static RAMs organized as 524288-words by 16-bit / 1048576-words by 8-bit,

44-PIN

Abstract: LH5PV16256
Contextual Info: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)

TC55W800FT

Abstract: TC55W800FT-55 DSA0069634 TSOP48-P-1220-0
Contextual Info: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16

TC55W1600FT

Abstract: TC55W1600FT-55
Contextual Info: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16

Contextual Info: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip

Contextual Info: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip

Contextual Info: MITSUBISHI LSIs 2002.5.28 Ver. 1.0 M5M5J167KT - 70HI 16777216-BIT 1048576-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5J167KT is a f amily of low v oltage 16Mbit static RAMs organized as 1048576-words by 16-bit, f abricated by Mitsubishi's

44256 dram

Abstract: 44256 44256 ram dram 44256
Contextual Info: MITSUBISHI LSIs MH25616PNA-10,-12 4194304-BIT 262144-W0RD BY 16-BIT PSEUDO-PSEUDO STATIC RAM DESCRIPTION The MH25616PNA is 262144 word x 16 bit PSEUDOPSEUDO static RAM and consist of four industry standard 256K x 4 bit dynamic RAMs in SOJ, two data selector in

Contextual Info: TC55W1600FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 16-BIT/2,097,152-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W1600FT is a 16,777,216-bit static random access memory SRAM organized as 1,048,576 words by 16

TC55W800FT

Abstract: TC55W800FT-55
Contextual Info: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16

bc2AT

Contextual Info: MITSUBISHI LSIs M5M51016BTP,RT-70L,-10L, -70LL,-10LL 1048576-BIT 65536-WQRD BY 16-BIT CMOS STATIC RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16-bit which are fabricated using high-performance triple polysilicon CMOS technology. The use of

Contextual Info: MITSUBISHI LSIs M5M51016ATP,RT-70L,-85L,-10L, -70LL,-85LL,-1 OLL 1048576-BIT 65536-WORD BY 16-BIT CM0S STATIC RAM DESCRIPTION The M5M51016ATP, RT are a 1048576-bit CMOS static RAM organized as 65536 word by 16 - bit which are fabricated using high-performance triple polysilicon CMOS