16 BIT STATIC RAM Search Results

BC244

Abstract: M5M51016BTP A-1540 a1540 A7423
Contextual Info: 9 9 JulJul ,1997 ,1997 MITSUBISHI LSIs LSIs MITSUBISHI M5M51016BTP,RT-10VL, M5M51016BTP,RT-10VL, -10VLL -10VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION The M5M51016BTP, RT are a 1048576-bit CMOS static RAM

8M624

Contextual Info: 1 MEGABIT 64K x 16-BIT & 512K (32K x 16-BIT) CM O S STATIC RAM M ODULE IDT8M624S IDT8M612S FEATURES: DESCRIPTION: • High-density 1024K/512K-bit CMOS static RAM module The IDT8M624S/IDT8M612S are 1024K/512K-bit high-speed CMOS static RAMs constructed on a multi-layered ceramicsubstrate using four IDT71256 32K x 8 static RAMs (IDT8M624S) or

IDT7164

Contextual Info: 256K 16K x 16-BIT & 128K (8Kx 16-BIT) CMOS STATIC RAM PLASTIC SIP MODULES IDT 8MP656S IDT 8MP628S FEATURES: DESCRIPTION: • High-density 256K/128K CMOS static RAM modules The IDT8MP656S/IDT8MP628S are 256K/128K-bit high-speed CMOS static RAMs constructed on an epoxy laminate substrate

M5M51016BTP

Abstract: RT-12VL RT-12VLL
Contextual Info: 9 Jul ,1997 MITSUBISHI MITSUBISHI LSIs LSIs M5M51016BTP,RT-12VL, -12VLL 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-12VL M5M51016BTP,RT-12VLL Access time

a1540

Abstract: M5M51016BTP RT-10VL-I
Contextual Info: 99Jul Jul,1997 ,1997 MITSUBISHI LSIs M5M51016BTP,RT-10VL-I, -10VLL-I 1048576-BIT 65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT CMOS 16-BIT)CMOS STATIC STATIC RAM RAM DESCRIPTION Power supply current M5M51016BTP,RT-10VL M5M51016BTP,RT-10VLL Access time (max)

44-PIN

Abstract: LH5PV16256
Contextual Info: LH5PV16256 CMOS 4M 256K x 16 Pseudo-Static RAM FEATURES DESCRIPTION • 262,144 words × 16 bit organization The LH5PV16256 is a 4M bit Pseudo-Static RAM with a 262,144 words × 16 bit organization. • Power supply: +3.0 ± 0.15 V • Access time: 120 ns (MAX.)

TC55W800FT

Abstract: TC55W800FT-55 DSA0069634 TSOP48-P-1220-0
Contextual Info: TC55W800FT-55,-70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16

Contextual Info: PRELIMINARY CY7C1061G/CY7C1061GE 16-Mbit 1 M words x 16 bit Static RAM with Error-Correcting Code (ECC) 16-Mbit (1 M words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features To access devices with a single chip enable input, assert the chip

44256 dram

Abstract: 44256 44256 ram dram 44256
Contextual Info: MITSUBISHI LSIs MH25616PNA-10,-12 4194304-BIT 262144-W0RD BY 16-BIT PSEUDO-PSEUDO STATIC RAM DESCRIPTION The MH25616PNA is 262144 word x 16 bit PSEUDOPSEUDO static RAM and consist of four industry standard 256K x 4 bit dynamic RAMs in SOJ, two data selector in

Diode smd f6

Contextual Info: MITSUBISHI LSIs M5M51R16AWG -10L, -12L, -15L, -10H, -12H, -15H 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using

Contextual Info: TOSHIBA TC55W800FT-55,-70 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM DESCRIPTION The TC55W800FT is a 8,388,608-bit static random access memory SRAM organized as 524,288 words by 16

Contextual Info: MITSUBISHI LSIs revision-02, ' 98.12.08 M5M5V216ATP,RT 2097152-BIT 131072-WORD BY 16-BIT CMOS STATIC RAM FEATURES DESCRIPTION The M5M5V216A is a f amily of low v oltage 2-Mbit static RAMs organized as 131,072-words by 16-bit, f abricated by Mitsubishi's

Contextual Info: MITSUBISHI LSIs 2002.04.18 Ver. 6.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Mitsubishi's

S29AL

Abstract: S71AL016D S71AL016D02-BF S71AL016D02-T7 S71AL016D02-TF
Contextual Info: S71AL016D based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 16 Megabit (1 M x 16-bit) CMOS 3.0 Volt-only Flash Memory and 2 Megabit (128K x 16-bit) Static RAM/ Pseudo Static RAM ADVANCE INFORMATION Distinctive Characteristics MCP Features „

Contextual Info: EbE D LOGIC DEVICES INC WÈ SSbSTQS O O O I H G LMM624 1 Megabit 64K x 16-bit Static RAM Module DESCRIPTION FEATURES □ IM egabit (64K x 16-bit) Static RAM M odule □ Utilizes 16 L7C187 64K x 1 Static RAMs □ A dvanced CMOS Technology Q H igh Speed, Low Pow er

Contextual Info: MOTOROLA Order this document by MCM6223/D SEMICONDUCTOR TECHNICAL DATA Product Preview MCM6223 64K x 16 Bit 5.0 V Asynchronous Fast Static RAM The MCM6223 is a 1,048,576 bit static random access memory organized as 65,536 words of 16 bits. Static design eliminates the need for external clocks or

Contextual Info: RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's

Diode smd f6

Abstract: smd transistor A13
Contextual Info: MITSUBISHI LSIs M5M51R16AWG -10LI, -12LI, -15LI, -10HI, -12HI, -15HI 1048576-BIT 65536-WORD BY 16-BIT CMOS STATIC RAM PIN CONFIGURATION (TOP VIEW) DESCRIPTION The M5M51R16AWG is a 1048576-bit CMOS static RAM organized as 65536 words by 16-bits, which are fabricated using

FN 52 pin MOTOROLA 778-02

Contextual Info: MOTOROLA Order this document by MCM62996/D SEMICONDUCTOR TECHNICAL DATA MCM62996 16K x 16 Bit Asynchronous Fast Static RAM The MCM62996 is a 262,144 bit static random access memory organized as 16,384 words of 16 bits. The device integrates a 16K x 16 SRAM core with active

Contextual Info: MOTOROLA Order this document by MCM62990A/D SEMICONDUCTOR TECHNICAL DATA MCM62990A 16K x 16 Bit Synchronous Fast Static RAM The MCM 62990A is a 262,144 bit synchronous static random access memory organized as 16,384 words of 16 bits. The device integrates a 16K x 16 SRAM

Contextual Info: H3S- TOSHIBA 4Mbit Static RAM TC554161AFT-V Data Sheet TO SHIBA TC554161 AFT-70Vf-85Vf-1 OV TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2S2,144-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC554161AFT is a 4,194,304-bit static random access memory SRAM organized as 262,144 words by 16

Contextual Info: MOTOROLA O rder this docum ent by M CM6343/D SEMICONDUCTOR TECHNICAL DATA Advance Information 256K x 16 Bit 3.3 V Asynchronous Fast Static RAM MCM6343 The MCM6343 is a 4,194,304-bit static random access memory organized as 262,144 words of 16 bits. Static design eliminates the need for external clocks

M5M5V216A

Abstract: M5M5V216AWG
Contextual Info: MITSUBISHI LSIs revision-01, ' 98.12.08 M5M5V216AWG 2097152-BIT 131072-WORD BY 16-BIT CMOS STATIC RAM FEATURES DESCRIPTION The M5M5V216A is a family of low voltage 2-Mbit static RAMs organized as 131,072-words by 16-bit, fabricated by Mitsubishi's high-performance 0.25µm CMOS technology.

Contextual Info: TOSHIBA TC55V2161 FTI-85#-10#-85L#-1OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16