15X20 Search Results

Contextual Info: nichicon ALUMINUM ELECTROLYTIC CAPACITORS PM Extremely Low Impedance, High Reliability series LbwImpedan-je LongLi*e Anti-Solvenl feature TTirtHJOfl 100V oniyl 1High reliability withstanding SOOOhour load life at +105*0 (3000/2000hours for smaller cage sizes as specified below .

Acopian Power Supply Model A24H1200

Abstract: Acopian DB12-30 Acopian Power Supplies transistor marking code wm9 24EB60 Acopian DB15-50 p022h 15j100 B24G210 A24H1500
Contextual Info: ALL ACOPIAN POWER SUPPLIES ARE MADE IN THE U.S.A. POWER SUPPLY SELECTION GUIDE 1 of 2 Shipped within 6 / 9 DAYS HIGH VOLTAGE REGULATED, AC-DC & DC-DC To 30 KV PAGE { 0-30 kV 1- 60 mA 30 - 60 watts MODULAR Single output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2-5

Infra-red obstacle detection project report

Abstract: ir remote control ROBOt project report ccd sensor star tracker CMOS Camera Module interface with arm 11 flying robot with camera image sensor star tracker motion sensor doppler IR sensor for obstacle avoidance obstacle detection project report radar sensor specification
Contextual Info: GSTP/ASCMSA/Integrated Radiation-tolerant Imaging System P60280-MS-RP-001 Identification of CMOS Imager Applications in Space Werner Ogiers IMEC, division MAP Kapeldreef 75 B-3001 Leuven tel:+32. 0 16.281.376 fax:+32.(0)16.281.501 ogiers@imec.be Identification of CMOS Imager

UJT-2N2646 PIN DIAGRAM DETAILS

Abstract: speed control of dc motor using ujt scr c107m TRANSISTOR equivalent UJT pin diagram 2N2646 1000w inverter PURE SINE WAVE schematic diagram TY6008 triac ot 239 class d 1000w amplifier inverter welder 4 schematic thyristor zo 402
Contextual Info: Theory and Applications Chapters 1 thru 9 Selector Guide Data Sheets Outline Dimensions and Leadform Options Index and Cross Reference E (g ) M OTOROLA THYRISTOR DATA Prepared by Technical Information Center This second edition of the Thyristor Data Manual has been revised extensively to reflect

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

Contextual Info: Features • • • • • • • • • • • • • • • • • • • • 1. 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K

SC417

Abstract: SC427 JESD22-A114 MLPQ-32 SC417MLTRT
Contextual Info: SC417/SC427 10A EcoSpeedTM Integrated FET Regulator with Programmable LDO POWER MANAGEMENT Features        Description Power system: Input voltage — 3V to 28V Integrated bootstrap switch Programmable LDO output — 200mA 1% reference tolerance -40 to +85 °C

Contextual Info: RVQ040N05 Nch 45V 4A Power MOSFET Datasheet lOutline VDSS 45V RDS on (Max.) 53mW ID 4A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RRQ045P03 Datasheet Pch -30V -4.5A Power MOSFET lOutline VDSS -30V RDS on (Max.) 35mW ID -4.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RTQ020N05 Datasheet Nch 45V 2A Power MOSFET lOutline VDSS 45V RDS on (Max.) 190mW ID 2A PD 1.25W (6) (5) TSMT6 (4) (1) (2) lFeatures (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RSQ015N06 Datasheet Nch 60V 1.5A Power MOSFET lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

AT89C51CC03

Abstract: AT89C51CC03C
Contextual Info: Features • • • • • • • • • • • • • • • • • • • 1. 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C Read/Write Cycle: 100K

atmel bootloader C51

Contextual Info: Features • • • • • • • • • • • • • • • • • • 1. 80C51 Core Architecture 256 Bytes of On-chip RAM 1K Bytes of On-chip ERAM 32K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C Read/Write Cycle: 10K 2K Bytes of On-chip Flash for Bootloader

Contextual Info: RSQ015N06 Nch 60V 1.5A Power MOSFET Datasheet lOutline VDSS 60V RDS on (Max.) 290mW ID 1.5A PD 1.25W lFeatures (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: RRL035P03 Pch -30V -3.5A Power MOSFET Datasheet lOutline VDSS -30V RDS on (Max.) 50mW ID -3.5A PD 1.0W lFeatures (6) TUMT6 (5) (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT6).

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

Contextual Info: RSQ020N03FRA Nch 30V 2A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS 30V RDS on (Max.) 134mW ID 2.0A PD 1.25W (6) TSMT6 (5) (4) (1) (2) (3) lInner circuit lFeatures 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode.

at89c51cc03 parallel programmer

Abstract: at89c51cc03 code examples ccf um 80C51 AT89C51CC03 PLCC44 PLCC52 VQFP44 VQFP64 BIPOLAR MEMORY
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

89C51CC03UA-UM

Abstract: 89C51CC03UA atmel 89c51cc03ua AT89C51CC03UA-RLTUM AT89C51CC03CA-RLTUM AT89C51CC03UA-RDTUM AT89C51CC03UA-SLSUM at89c51cc03 parallel programmer AT89C51CC03C ccf um
Contextual Info: Features • • • • 80C51 Core Architecture 256 Bytes of On-chip RAM 2048 Bytes of On-chip ERAM 64K Bytes of On-chip Flash Memory – Data Retention: 10 Years at 85°C – Read/Write Cycle: 100K • 2K Bytes of On-chip Flash for Bootloader • 2K Bytes of On-chip EEPROM

Contextual Info: RSQ045N03 Nch 30V 4.5A Power MOSFET Datasheet lOutline VDSS 30V RDS on (Max.) 38mW ID 4.5A PD 1.25W lFeatures (6) (5) TSMT6 (4) (1) (2) (3) lInner circuit 1) Low on - resistance. (1) (2) (3) (4) (5) (6) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6).

Contextual Info: 高圧進相コンデンサ 高調波による進相コンデンサの過電流対策として高調波が非常に多い（電圧ひずみ率が異常に高い）場合は直列リアクトルのリ アクタンスをL＝13 ％（標準品はL＝６ ％）と大きくします。L＝13 ％の直列リアクトルを採用される場合にはコンデンサの端子電

Contextual Info: 低圧進相コンデンサ 200 V級 E形（kvar容量）10~50 kvar L＝6 ％対応品 油 入 式 250 275 290 95 320 4 -7x9長穴 340 取付ピッチ 340×55 125 55 4 -6×9長穴 取付ピッチ 275×35 90 60 35 寸法図（mm） 2 -15×20長穴 343

Contextual Info: 高圧進相コンデンサ 油入式 “ACEVAR ” （SH方式） L＝6 ％対応品 10~500 kvar（6600 V） 保護接点付 10∼300 kvar（3300 V） すべて放電抵抗を内蔵しています。 内部故障時に自己遮断する保安装置を内蔵しています。

Contextual Info: RUF020N02 Datasheet Nch 20V 2.0A Power MOSFET lOutline VDSS 20V RDS on (Max.) 105mW ID 2A PD 0.8W lFeatures (3) TUMT3 (1) (2) lInner circuit 1) Low on - resistance. (1) Gate (2) Source (3) Drain 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TUMT3).