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    15N120 Search Results

    15N120 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TRS15N120HB
    Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 1200 V, 15 A, 2 in 1, TO-247 Datasheet
    TW015N120C
    Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET, 1200 V, 100 A, 0.020 Ω@18 V, TO-247 Datasheet

    15N120 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    15N120C3
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.25KB 1
    badge CXG15N120H
    CREATEK Microelectronics 1200V 15A IGBT in TO-247 package with VCE(sat) of 2.30V at 15A, featuring high speed switching, soft turn-off waveforms, and square RBSOA for motor control and inverter applications. Original PDF
    SF Impression Pixel

    15N120 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IKW15N120CS7XKSA1

    IGBT TRENCH FS 1200V 36A TO247-3
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    Infineon Technologies AG IGB15N120S7ATMA1

    IGBT TRENCH FS 1200V 34A TO263-3
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    Infineon Technologies AG IHW15N120E1XKSA1

    IGBT NPT/TRENCH 1200V 30A TO247
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    Infineon Technologies AG IHW15N120R3FKSA1

    IGBT TRENCH 1200V 30A TO247-3
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    Infineon Technologies AG IGW15N120H3FKSA1

    IGBT TRENCH FS 1200V 30A TO247-3
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    15N120 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IXGH 15N120C IXGT 15N120C IGBT Lightspeed Series VCES = 1200 V = 30 A IC25 VCE sat = 3.8 V tfi(typ) = 115 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous


    Original
    15N120C O-247 O-268 PDF

    15N120

    Contextual Info: IXSH 15N120BD1 I = 30 A C25 IXST 15N120BD1 V = 1200 V CES "S" Series - Improved SCSOA Capability VCE sat = 3.4 V HIGH Voltage IGBT with Diode Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original
    15N120BD1 15N120 PDF

    15n120

    Contextual Info: IXRA 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


    Original
    15N120 O-263AB 20110120b 15n120 PDF

    Contextual Info: Advanced Technical Information HiPerFASTTM IGBT IXGH 15N120B VCES = 1200 V = 30 A IXGT 15N120B IC25 VCE sat = 3.2 V tfi(typ) = 160 ns Symbol Test Conditions VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20


    Original
    15N120B O-268 O-247 O-247) PDF

    IC IGBT 15N120

    Abstract: 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt
    Contextual Info: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


    Original
    15N120 O-220AB 20110120b IC IGBT 15N120 15n120 H1AA1 "bi-directional switches" IGBT 15n120 igbt PDF

    IC IGBT 15N120

    Abstract: bi-directional switches IGBT 15n120
    Contextual Info: IXRA 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-263AB 1 3 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C VGES


    Original
    15N120 O-263AB 20110120b IC IGBT 15N120 bi-directional switches IGBT 15n120 PDF

    Contextual Info: Advance Technical Information HiPerFASTTM IGBT 15N120B2D1 15N120B2D1 Optimized for 10-20 KHz hard switching and up to 100 KHz resonant switching VCES IC25 VCE sat =1200 V = 30 A = 3.3 V = 137 ns tfi(typ) Symbol Test Conditions Maximum Ratings VCES


    Original
    IXGH15N120B2D1 IXGT15N120B2D1 O-247AD O-268 065B1 728B1 123B1 728B1 PDF