15N 50 Search Results

SCR 24V

Abstract: 15n05
Contextual Info: a tiv e T ent Step-Down DC-DC Converter 15 Watt TSI-15N Series TSI-15N Series are step down converters whith a very high efficiency . By adopting a custom multi chip module IC, it was possible to reduce the number of components drastically. Herew and low cost could be realized.

a722

Abstract: ELF17N007A ELF18N008A ELF18N020A ELF20N022A A612 ELF18D290S A543 transistor A144 diode A612
Contextual Info: Line Filters n Series N, High N l Type 15N, 17N Dimensions in mm not to scale Recommended PWB piercing plan 21.5 1.0 Marking ± ± 10.00 0.05 " 4.0 1.0 ± 10.0 0.5 ± ± 13.0 0.5 ± 15.0 0.5  ! ± 22.7 0.5 ± 13.00 0.05 ± B 4Ð 0.8 0.1 Examples (Series N : 15N)

A24-12-1D

Abstract: DC 0509 hz 9102 traco 212 RCR-9102 15n05
Contextual Info: a tiv e T ent Step-Down DC-DC Converter 15 Watt TSI-15N Series TSI-15N Series are step down converters whith a very high efficiency . By adopting a custom multi chip module IC, it was possible to reduce the number of components drastically. Herewith two goals, high reliability and low cost could be realized.

Contextual Info: RF Coaxial Connector SPECIFICATIONS BNC Series Right Angle Jack For PCB Solder Mechanical Contact Captivation Force: 15N min. Durability: 1000Cycles Electrical Impedance: 75Ω Nominal Frequence Range: 0~2GHz Voltage Rating: 500V max. Dielectrical Withstanding Voltage: 1500V min.

15N15

Abstract: rfm15n15 diode RA 225 R
Contextual Info: R FM 15N 12/15N 15 R FP15N12/15N15 3 H a r r is N-Channel Enhancement-Mode Power Field-Effect Transistors A u g u s t 1991 Packages Features T 0 -204A A BOTTOM VIEW • 15 A , 1 2 0V a n d 150V • r D S on) = 0 .1 5 f l DRAIN (FLANGE) SOURCE • S O A is P o w e r-D is s ip a tio n L im ite d

Contextual Info: U S B -B -S -S -B -S M SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com? USB-B or www.samtec.com?USBR-B Minimum 15N withdrawal force Insulator Material: High Temperature Thermoplastic FILE HO. El 115W Contact Material:

Contextual Info: ELECTRICAL: CURRENT RATING: 1.5 AMP/CONTACT TEST VOLTAGE: 750Vms CONTACT RESISTANCE: 20 M Ω MAX. INSULATION RESISTANCE: 10 M Ω MIN. MECHANICAL: CONTACT RETENTION: 600 gms MIN. INSERTION FORCE: .45N MAX. per contact WITHRAWL FORCE: .15N MAX. (per contact)

Contextual Info: ELECTRICAL: CURRENT RATING: 1.5 AMP/CONTACT TEST VOLTAGE: 750Vms CONTACT RESISTANCE: 20 M Ω MAX. INSULATION RESISTANCE: 10 M Ω MIN. MECHANICAL: CONTACT RETENTION: 600 gms MIN. INSERTION FORCE: .45N MAX. per contact WITHRAWL FORCE: .15N MAX. (per contact)

Contextual Info: High Voltage range 500V - 6kVdc High Voltage range - 500V to 6kVdc = New Ranges Capacitance values. 1812 1825 2220 2225 3640 4.7p-4.7n 15p-3.9n 10p-10n 10p-18n 10p-15n 10p-22n 10p-68n 8060 1808 1.0p-1.5n 5550 1210 0.47p-68p* 1.0p-390p 1206 0805 0603 390p-150n 680p-220n

Contextual Info: U S B -B -S -S -B -S M USB-B, USBR-B SERIES STANDARD & RUGGED USB 2 SPECIFICATIONS For complete specifications and recommended PCB layouts see www.samtec.com? USB-B or www.samtec.com?USBR-B Minimum 15N withdrawal force Insulator Material: High Temperature

Contextual Info: Ordering Inform ation: RoHS COMPLIANT 2569 P * _* 00W 1 2 1. Circuits: Material: Insulator: PBT U L94V -0 Cotact: Brass 2. Plating: » T=Tin plated U=Gold flash 1» W =15n gold Z = 3 0 n ” gold 120k1 plated plated plated »1 min over 30~50!^ nickel overall

POE-15

Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 18801 PH1819-15N bipolar power transistor wacom
Contextual Info: * s z E f FEYi = -= -=-= = ,’ E an AMP company Wireless Bipolar Power Transistor, 1.78 - 1.90 GHz . 15W PH1819-15N v2.00 Features NPN Silicon Microwave Power Transistor Designed for Linear Amplifier Applications Class AB: -34 dBc Typ 3rd IMD at 15 Watts PEP

Contextual Info: LT1113AMJ8 Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 50n Unity Gain BW (Hz)2.5M V(io) Max. (V)2.8m I(io) Max. (A)15n Com Mode Inp Range (VICR)23 Input Resistance Typ. (Ohms)100G Temp Coef. of VIO P(D) Max. (W)

Contextual Info: _L _L Ordering Information: 2543 S V 1 Q! 1 2 3 RoHS COMPLIANT 1. No. of circuits: 2. Plating: Insulator: PBT, UL94V-0 T=Tin plated 100 p ” over 30~50 p” nickel overall Contact: Phosphor Bronze U=Gold flash over 30~50P nickel overall W =15n” gold over 30~50P

Contextual Info: OP271FZ Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 40n Unity Gain BW (Hz)5.0MÂ V(io) Max. (V)300u I(io) Max. (A)15n Com Mode Inp Range (VICR)12.5ñ Input Resistance Typ. (Ohms)0.4M Temp Coef. of VIO1u P(D) Max. (W)500m

Contextual Info: OP295AZ/883 Linear ICs Dual General Purpose Op Amp status Military/High-RelY Input Bias Current Max. A 15n¾ Unity Gain BW (Hz)80k V(io) Max. (V)500u¾ I(io) Max. (A)2.0n Com Mode Inp Range (VICR)13.5ñ Input Resistance Typ. (Ohms) Temp Coef. of VIO10u P(D) Max. (W)

Contextual Info: SPECIFICATIONS Audio Jack Connector Mechanical Connector Mating Force: TOTAL :25N 2.5 Kgf MAXIMUM . 1 Port Audi o Jack Series Right Angle Type, AUDIO JACK: 15N(1.5 Kgf) MAXIMUM 4-PIN SOCKET: 8N(0.8 Kgf) MAXIMUM Connector Un mating Force: TOTAL: 5N(0.5 Kgf) MINIMUM.

shematics

Contextual Info: Line Filters Japan Singapore Indonesia Slovakia Line Filters N Type 15N, 18N, 20N Series:High N (Type 17N, 19N, 21N) Series:V (Type 290, 450, 650, 850, 21V, 24V) Series:H (Type 200, 270, 400, 600) Series:F (Type 23F, 25F) Series:M (Type 11M, 14M, 16M) Series N, High N

Contextual Info: Line Filters Japan Singapore Indonesia Slovakia Line Filters N Type 15N, 18N, 20N Series: High N (Type 17N, 19N, 21N) Series: V (Type 290, 450, 650, 850, 21V, 24V) Series: H (Type 200, 270, 400, 600) Series: F (Type 23F, 25F) Series: M (Type 11M, 14M, 16M)

Contextual Info: OP290EZ Linear ICs Dual General Purpose Op Amp status Military/High-RelN Input Bias Current Max. A 15n Unity Gain BW (Hz)20k V(io) Max. (V)200u I(io) Max. (A)3.0n Com Mode Inp Range (VICR)13.5ñ Input Resistance Typ. (Ohms)30M Temp Coef. of VIO0.3u P(D) Max. (W)500m

Contextual Info: MA4P155 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 40 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.2.0 @If (A)10m Ct{Cj} Nom. (F) Junction Cap.500f Carrier Lifetime (S)15n @I(F) (test) (A) @I(R) (A) (Test Condition)10m Maximum Operating Temp (øC)175

Contextual Info: 2N3578 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A)50m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

47n J 1000V

Contextual Info: Standard Grade Validity: Q1-CY2014 X5R – roadmap 0101 to 0603 Case Size 0101 = EIA 01005 0201 Voltage Mass Production 2014 2015 Capacitance Value / Capacitance Code 100 150 220 330 470 680 1n 1n5 2n2 3n3 4n7 6n8 10n 15n 22n 33n 47n 68n 100n 220n 470n 1u

ELF 850 C

Contextual Info: Line Filters Singapore Indonesia Japan Line Filters Series: Series: Series: Series: Series: Series: N Type 15N, 18N, 20N High N (Type 17N, 19N, 21N) V (Type 290, 450, 21V, 22V, 24V) H (Type 200, 270, 400, 19H, 600) F (Type 23F, 25F) M (Type 11M, 14M, 16M)