15FEB08 Search Results
15FEB08 Datasheets Context Search
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Contextual Info: GA200HS60S1PbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package |
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ga200hs60s1pbfe789962002/95/ec2011/65/eu+2 | |
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Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
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gb200ts60npbfe789962002/95/ec11-mar-11 | |
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2567 MHz 16 VDC 2741 Tuning Voltage: MHz 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 25 35 mA Harmonic Suppression 2 Harmonic : |
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10khz100khzcvco55xxcvco55cc-2567-2741+1 | |
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Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER P L A S T I C PLUNGER 13SX96-T PRODUCT CODE VDK2843 0 . 0 9 0 MAX MOUNTI NG HOLE .040-.045 FROM LETTERI NG B {- .* 3 2 0 rf OPERAT ING POS I T I ON 0060324 VKR 13JAN10 CHECK CMH nSR . 03±. 0 B ^-0.063 09±. 0 |
OCR Scan |
13sx96-t13jan10vdk284315feb08 | |
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Contextual Info: F O - 5 5 1 1 1 -A HONEYWELL PART NUMBER REV DOCUMENT 14 0060324 CHANGED VKR BY 13JAN10 CHECK CMH 13SX21-T PRODUCT CODE VDK2800 r i B .0 3 0 ± .0 I0 R B 0 6 3 DIA .3 5 0 ± .0 I0 I .070 REF — . 0 6 0 DIA NOTES A h— .0 4 0 DIA MOUNTING HOLES W ILL ACCEPT PINS OR SCREWS |
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13sx21-t13jan10vdk2800pr-5683 | |
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Contextual Info: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
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gb200ts60npbfe789962002/95/ec2011/65/eu+1 | |
74HC132
Abstract: CAT5113 LM6064 LT1097 MS-001 RB555
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cat5113100-tap100-positionmd-2009+5 | |
rj45 tab downContextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR MATERIAL: GLASS FILED PBT COLOUR: BLACK CONTACT MATERIAL: COPPER ALLOY CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD QUALITY CLASS: 500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: –25 °C UP TO 85 °C |
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ul94-v015-feb-0820-nov-07rj45 tab down | |
Monopack 2 manual
Abstract: lt 5217 ic485-I sim 5218 LT 5224 LT 5212 A250 TMC453 ic485-lp-1f LT 5216
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2-nov-0518-aug-0621-aug-0616-may-2007+13 | |
CVCO55CC-3318-3467Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3318 MHz 16 VDC 3467 Tuning Voltage: MHz 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 25 35 mA Harmonic Suppression 2 Harmonic : |
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10khz100khzcvco55cc-3318-346715-feb-08 | |
VS-GA200HS60S1PBFContextual Info: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half-Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Standard: Optimized for hard switching speed DC to 1 kHz • Very low conduction losses • Industry standard package |
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vs-ga200hs60s1pbfe789962002/95/ec2011/65/eu+2 | |
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Contextual Info: VS-VSKT152/04PbF www.vishay.com Vishay Semiconductors Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability |
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vs-vskt152/04pbfe789962002/95/ec2011/65/eu+2 | |
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Contextual Info: MKP 338 1 X1 Vishay BCcomponents Interference Suppression Film Capacitors MKP Radial Potted Type FEATURES l l w 15 to 27.5 mm lead pitch and 15 mm bent back to 7.5 mm. Supplied loose in box, taped on ammopack or reel w h h h' F' lt P Ø dt e3 Lead Pb -free product |
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08-apr-05 | |
marking code 8 lead msop package analog devices
Abstract: CAT5113 potentiometer 10k 3 cycles 74HC132 LM6064 LT1097 MS-001
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cat5113100-tap100-positionmd-2009+6 | |
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VS-GA200HS60S1PBFContextual Info: VS-GA200HS60S1PbF www.vishay.com Vishay Semiconductors INT-A-PAK Half Bridge IGBT Standard Speed IGBT , 200 A FEATURES • Gen 4 IGBT technology • Standard: optimized for hard switching speed • Very low conduction losses • Industry standard package |
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vs-ga200hs60s1pbfe789962002/95/ec2011/65/eu+2 | |
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Contextual Info: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 3318 MHz 16 VDC 3467 Tuning Voltage: MHz 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 25 35 mA Harmonic Suppression 2 Harmonic : |
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10khz100khzcvco55xxcvco55cc-3318-3467+1 | |
74HC132
Abstract: CAT5114 LM6064 LT1097 MS-001 CAT5114ZI-10
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cat511432-tap32-positionmd-2007+5 | |
13SX96-T
Abstract: 25E3 T125 VDK2843
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OCR Scan |
13sx96-tvdk284328apr08pr-22522+5 | |
74HC132
Abstract: CAT5113 LM6064 LT1097 MS-001 MS-187 25K4
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cat5113100-tap100-positionmd-2009+6 | |
74HC132
Abstract: CAT5114 LM6064 LT1097 MS-001 TDFN8 32-tap cat51
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cat511432-tap32-positionmd-2007+6 | |
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Contextual Info: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability |
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gb100ts60npbfe789962002/95/ec2011/65/eu+1 | |
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Contextual Info: Outline Dimensions Vishay Semiconductors INT-A-PAK IGBT/Thyristor 29 1.15 28 (1.10) 9 (0.33) 30 (1.18) 7 (0.28) DIMENSIONS in millimeters (inches) Ø 6.5 (0.25 DIA) 80 (3.15) 23 (0.91) 7 6 4 5 (0.20) 5 23 (0.91) 1 3 screws M6 x 10 2 2.8 x 0.8 (0.11 x 0.03) |
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15-feb-08 | |
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Contextual Info: VS-VSK.136.PbF, VS-VSK.142.PbF, VS-VSK.162.PbF Series www.vishay.com Vishay Semiconductors Thyristor/Diode and Thyristor/Thyristor, 135 A to 160 A New INT-A-PAK Power Modules FEATURES • High voltage • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage |
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e789962002/95/ec2011/65/eujs709a+1 | |
e789Contextual Info: VSKT152/04PbF Vishay High Power Products Thyristor/Thyristor, 150 A New INT-A-PAK Power Module FEATURES • Electrically isolated by DBC ceramic (AI2O3) • 3500 VRMS isolating voltage • Industrial standard package • High surge capability • Glass passivated chips |
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vskt152/04pbfe789962002/95/ec2011/65/eu+2 | |