15DEC2005 Search Results

MD2310FX

Abstract: MD2310 id 11801
Contextual Info: MD2310FX High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – diffused collector “enhanced generation” ■ Stable performance versus operating temperature variation ■ Low base drive requirement

BCR10

Abstract: M69KM096AA
Contextual Info: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to VCC for I/O buffers ■ Multiplexed Address/Data bus

Contextual Info: SN74LVC1T45 SINGLE-BIT DUAL-SUPPLY BUS TRANSCEIVER WITH CONFIGURABLE VOLTAGE TRANSLATION AND 3-STATE OUTPUTS www.ti.com SCES515G – DECEMBER 2003 – REVISED DECEMBER 2005 FEATURES • • • • • • • • Available in the Texas Instruments NanoStar and NanoFree™ Packages

Contextual Info: M65KC512AB 512Mbit 4 Banks x 4M x 32 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Preliminary Data Features summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 4MWords, each 32 bits wide ■ Supply Voltage – VDD = 1.7 to 1.9V (1.8V typical in

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

bcr10

Contextual Info: M69KM096AA 64 Mbit 4 Mb x16 , 83MHz clock rate, 1.8V Supply, Multiplexed I/O, Bare Die, Burst PSRAM Preliminary Data Feature summary • Supply Voltage – VCC = 1.7 to 1.95V core supply voltage – VCCQ = 1.7 to 1.95V for I/O buffers ■ Multiplexed Address/Data bus

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D G [M c a P P [H g]|g -Ô- 0.95 IS H i — ô — g )a -Ô- -Ô- -Ô- -Ô- -Ô- -Ô- - Ô -Ô- - M A X —• 2 .0 - 24 SPACES AT

TFBGA105

Abstract: M58PR512J JESD97 M39P0R9080E0 TFBGA-105 strataflash 512mbit
Contextual Info: M39P0R9080E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • ■ Multi-Chip Package – 1 die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory

p5nk60zfp

Abstract: STD5NK60Z P5NK60 P5NK60Z STP5NK60ZFP p5nk60zf D5NK6 STD5NK60ZT4 STP5NK60Z D5NK60
Contextual Info: STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS@ TJmax RDS on Id PTOT STP5NK60Z STP5NK60ZFP STD5NK60Z 650 V 650 V 650 V < 1.6 Ω

A0-A21

Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48
Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

Contextual Info: BurrĆBrown Products from Texas Instruments AMC7823 SLAS453B – APRIL 2005 – REVISED DECEMBER 2005 ANALOG MONITORING AND CONTROL CIRCUIT FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • 12-Bit ADC 200 kSPS – Eight Analog Inputs

Contextual Info: TS321 LOW-POWER SINGLE OPERATIONAL AMPLIFIER www.ti.com SLOS489 – DECEMBER 2005 FEATURES • • • • • • D SOIC PACKAGE (TOP VIEW) Wide Power-Supply Range – Single Supply…3 V to 30 V – Dual Supply…±1.5 V to ±15 V Large Output Voltage Swing…

Contextual Info: ESDA14V2-4BF3 Quad bidirectional Transil array for ESD protection Features • 4 bidirectional Transil functions ■ ESD Protection: IEC 61000-4-2 level 4 ■ Stand-off voltage: 12 V min. ■ Low leakage current < 0.5 µA ■ 50 W Peak pulse power 8/20 µs

MD2310FX

Abstract: MD2310 Circuits using 4440 IC ISOWATT218FX JESD97
Contextual Info: MD2310FX High voltage NPN Power transistor for standard definition CRT display Features • State-of-the-art technology: – diffused collector “enhanced generation” ■ More stable performance versus operating temperature variation ■ Low base drive requirement

Contextual Info: TS951, TS952, TS954 Input/output rail-to-rail low power operational amplifiers Features TS951ILT • Rail-to-rail input common-mode voltage range ■ Rail-to-rail output voltage swing ■ Operating from 2.7 V to 12 V ■ High-speed 3 MHz, 1 V/µs ■ Low consumption (0.9 mA at 3 V)

sot23-5 package marking k101

Abstract: MARKING AAA sot23-5 st DIP14 marking code 5561 st
Contextual Info: TS951, TS952, TS954 Input/output rail-to-rail low power operational amplifiers Datasheet − production data Features TS951ILT • Rail-to-rail input common mode voltage range ■ Rail-to-rail output voltage swing ■ Operating from 2.7 V to 12 V ■ High-speed 3 MHz, 1 V/µs

CHN 750

Contextual Info: BurrĆBrown Products from Texas Instruments AMC7823 SLAS453B – APRIL 2005 – REVISED DECEMBER 2005 ANALOG MONITORING AND CONTROL CIRCUIT FEATURES APPLICATIONS • • • • • • • • • • • • • • • • • 12-Bit ADC 200 kSPS – Eight Analog Inputs

marking EG

Abstract: AN1751 Date Code Marking STMicroelectronics Part Marking STMicroelectronics AN1235 ESDA14V2-2BF3 JESD97 M033
Contextual Info: ESDA14V2-2BF3 ASD Application Specific Devices Dual bidirectional TRANSIL array for ESD protection Application Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers ■ Printers ■ Communication systems and cellular phones

Contextual Info: STD5NK60Z STP5NK60Z - STP5NK60ZFP N-CHANNEL 650V @Tjmax - 1.2Ω - 5A TO-220/FP/DPAK Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS@ TJmax RDS on Id PTOT STP5NK60Z STP5NK60ZFP STD5NK60Z 650 V 650 V 650 V < 1.6 Ω

M0333

Abstract: ESDA14V2-4BF3 JESD97 M-0333 Part Marking STMicroelectronics BV16
Contextual Info: ESDA14V2-4BF3 ASD Application Specific Devices Quad bidirectional TRANSIL array for ESD protection Application Where transient overvoltage protection in ESD sensitive equipment is required, such as : • Computers ■ Printers ■ Communication systems and cellular phones

ESDA14V2-2BF3

Abstract: AN1751 AN2348 JESD97
Contextual Info: ESDA14V2-2BF3 Quad bidirectional Transil array for ESD protection Features • 2 bidirectional Transil functions ■ ESD protection: IEC 61000-4-2 level 4 ■ Stand off voltage: 12 V Min. ■ Low leakage current ■ Very small PCB area < 1.5 mm2 ■ 400 microns pitch

Contextual Info: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words

TS951-TS952-TS954

Abstract: q001 TS951 TS951ID TS951ILT TS952 TS954 TSSOP14 marking e3 sot23-5 952i
Contextual Info: TS951-TS952-TS954 Input/output rail-to-rail low power operational amplifier Features • Rail-to-rail input common-mode voltage range ■ Rail-to-rail output voltage swing ■ Operating from 2.7V to 12V ■ High-speed 3MHz, 1V/µs ■ Low consumption (0.9mA @ 3V)