15B2 DIODE Search Results

diode 39b2

Abstract: R5C485 39B2 39B4 DIODE 22B4 39B3 diode 3.9B2 39B-3 smd code JTP1138
Contextual Info: SENS V20 Series Owner : Kevin, Lee Signature : H.J. KIM W.S. Jung APPROVAL MP 1.0 Aug, 15, 2002 DRACO MAIN BOARD CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : Pentium-IV Chip Set : Brookdale-GL / ICH4 DRACO X POWER LED / KBD / PS2 / TOUCHPAD

AR5212

Abstract: ar5312 diode 39b2 AR5112 AR5213 AR5211 st c739 FD507 U508-3 AR533 Ct516
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X05 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)

Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ

Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ

ZP80

Abstract: 11B2 Diode motorola diode ZP PI3LVD812 diode 6b1 10B1 10B2 11B1 11B2 12B1
Contextual Info: PI3LVD812 3.3V, 8-differential Channel Dual-LVDS Switch Targeted for 18-bit Displays Features Description • Designed specifically to switch Dual-LVDS signals • Full switch for 6-differential LVDS data signals and 2 differential LVDS clock signals • VDD = 3.3V ±10%

18b2 diode

Abstract: DIODE 15B2 PI3LVD1012 diode 18b2 PI3LVD1012BE 18b1 diode 15b2 diode 18b2 10B1 10B2
Contextual Info: PI3LVD1012 3.3V, 10-differential channel Dual-LVDS switch targeted for 24bit displays Features Description • Designed specifically to switch Dual-LVDS signals • VDD = 3.3V +/-10% • ESD tolerance on video I/O pins is up to 12kV HBM • -3dB BW of 1.0GHz typ

10B1

Abstract: 10B2 12B1 12B2 16B1 16B2 QS3165233 DIODE 15B2
Contextual Info: QS3165233 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux With 50Ω Damping Resistor QS3165233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional switches connect inputs

Contextual Info: QuickSwitch Products QS316233 High-Speed CMOS QS3162233 QuickSwitch 32:16 Mux/Demux & c lu c T O R , iN c . FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • 5£2 bidirectional switches connect inputs to outputs • Zero propagation delay, zero ground bounce

SO56-1

Abstract: IDTQS3165233 QS3165233 10B1 10B2 12B1 12B2 16B1 3414a
Contextual Info: IDTQS3165233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX Ω DAMPING RESISTOR WITH 50Ω DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc

1562B

Contextual Info: IDTQS316233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX FEATURES: • • • • • • DESCRIPTION: Enhanced N channel FET with no inherent diode to Vcc Ω bidirectional switches connect inputs to outputs

10B1

Abstract: 10B2 12B1 12B2 QS3162233 QS316233
Contextual Info: QS316233, QS3162233 QuickSwitch Products High-Speed CMOS QuickSwitch 32:16 Mux/Demux Q QUALITY SEMICONDUCTOR, INC. QS316233 QS3162233 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • 5Ω bidirectional switches connect inputs

9b2 diode

Abstract: DIODE 15B2 10B1 10B2 12B1 12B2 16B1 IDTQS3165233 QS3165233
Contextual Info: IDTQS3165233 HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH 32:16 MUX/DEMUX Ω DAMPING RESISTOR WITH 50Ω DESCRIPTION: FEATURES: − − − − − − Enhanced N channel FET with no inherent diode to Vcc

R7411 2A

Abstract: PP3V42G3H FERR-220-OHM-2A C5301 C5302 2N7002DW-X-F R7411 macbook macbook pro 13 U5100
Contextual Info: 8 6 7 5 2 3 4 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? DATE ? SCHEM,LIO/AUDIO ,MacBook Pro 15"

39B4

Abstract: ar5312 CT450 TP880 A0744 Q506 J955 2007-000162 AR5212 C699
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X15 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 40(Operation Block Diagram)

Contextual Info: IDTQS3VH16233 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH INDUSTRIAL TEMPERATURE RANGE QUICKSWITCH PRODUCTS 2.5V / 3.3V 32:16 MUX/DEMUX HIGH BANDWIDTH BUS SWITCH IDTQS3VH16233 FEATURES: DESCRIPTION: • N channel FET switches with no parasitic diode to Vcc

12B220

Abstract: PS8178 561b
Contextual Info: f j j PER ICOM 3.3V, Synchronous 16-Bit to 32-Bit FET Mux/Demux BusSwitch Product Features Product Description • Near-Zero propagation delay. • 5il Switches Connect Between Two Ports • Packages Available : - 56-pin 240mil Wide Thin Plastic TSSOP A56

20b1 diode

Abstract: TP5056 samsung R530 2.0b1 diode TP-103-03 TP10592 smd diode ab11 b34 TP10387 sock 30p-2r-smd diode 107 10K 521
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 9. 회로도 9-1. External Graphic 9 - 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL

XC503

Abstract: schematic diagram tv samsung AR5212 XC502 C568 ar5312 ZD5022 CT502 7S06 SOT23 d526 y
Contextual Info: 7 Schematic Diagrams and PCB Silkscreen 7-1 MAIN BOARD 7-1-1 Schematic Diagrams X30 7-1 This Document can not be used without Samsung’s authorization. 7 Schematic Diagrams and PCB Silkscreen 7-1-1 a Main Board Schematic Sheet 2 of 42(Operation Block Diagram)

samsung R530

Abstract: TP5056 smd diode ae C535 30C4 20b1 diode smd diode ab11 b34 U-503 B5-17 R-5670 Socket AM2
Contextual Info: 이 문서는 삼성전자의 기술 자산으로 승인자만이 사용할 수 있습니다. This Document can not be used without Samsung's authorization. 9. 회로도 9-1. External Graphic www.kythuatvitinh.com 9 - 1 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL

Contextual Info: PI3C16234

DIODE 15B2

Abstract: 272b1 240mil 10B1 10B2 12B1 12B2 16B1 16B2 PI3B16232
Contextual Info: PI3B16232 3.3V, Synchronous 16-Bit to 32-Bit FET Mux/DeMux NanoSwitch Features Description • Near-Zero propagation delay. The PI3B16232 is a 3.3 volt, 16-bit switch. • 5-ohm Switches Connect Between Two Ports to 32-bit synchronous • Packaging Pb-free & Green available :

10A1

Abstract: 10B1 11B1 12A1 12B1 13B1 14A1 15B1
Contextual Info: PI3C16234

10A1

Abstract: 10B1 11B1 12A1 12B1 13B1 14A1 15B1
Contextual Info: PI3C16234

16B2 Diode

Contextual Info: PI3B32160