15A 50V P-CHANNEL MOSFET Search Results

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM TB334 d15p0 rfd15 D15p05 harris
Contextual Info: [ /Title RFD15 P05, RFD15 P05SM, RFP15 P05 /Subject (15A, 50V, 0.150 RFD15P05, RFD15P05SM, RFP15P05 Semiconductor -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A, -50V These are P-Channel power MOSFETs manufactured using

D15P05

Abstract: RFP15P05 P-channel MOSFET VGS -25V transistor RFD15P05 RFD15P05SM RFD15P05SM9A TB334 RFD15P05 d15p0
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet January 2002 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs Features • 15A, 50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives

D15P05

Contextual Info: * f* 3 2 S RFD15P05, RFD15P05SM, RFP15P05 -15A, -50V, 0.150 Ohm, P-Channel Power MOSFETs September 1998 Features Description • -15A,-50V These are P-Channel power MOSFETs manufactured using the MegaFET process. This process which uses feature sizes approaching those of LSI integrated circuits, gives opti­

D15P05

Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs [ /Title RFD1 5P05, RFD15 P05S M, RFP15 P05 /Subject (15A, 50V, 0.150 Ohm, PChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, PChannel Power

D15P05

Abstract: RFP15P05 RFD15P05 RFD15P05SM RFD15P05SM9A TB334
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 Data Sheet July 1999 15A, 50V, 0.150 Ohm, P-Channel Power MOSFETs • 15A, 50V Formerly developmental type TA09833. • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve

RFP15P05

Abstract: RFD15P05SM RFD15P05 RFD15P05SM9A F15P05
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 S E M I C O N D U C T O R 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs December 1995 Packaging Features JEDEC TO-220AB • 15A, 50V SOURCE DRAIN GATE • rDS ON = 0.150Ω • Temperature Compensating PSPICE Model

2671I

Abstract: D15P05 RFP15P05 673E-9
Contextual Info: RFD15P05, RFD15P05SM, RFP15P05 f f l H A R R IS CKJ 15A, 50V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packaging JE D EC TO-22QAB • 15A ,50V ’ *”d s o n = 0 .1 5 0 1 2 • Temperature Compensating PSPICE Model

fs30umh-2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30UMH-2 HIGH-SPEED SWITCHING USE FS30UMH-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. . 1.3 \ j j 3.6 1.0 ÎL 0.8 2.54 • 2.5V DRIVE • VDSS .100V • Integrated Fast Recovery Diode TYP.

FX30KMJ-2

Abstract: 4450 mosfet
Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30KMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30KMJ-2 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2

FX30VSJ2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30VSJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4.5 1.5 max 10.5 max 1.3 3.0 +0.3 –0.5

fx30smj2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30SMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30SMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 15.9 max 1.5 5.0 4 4 2

fx30umj2

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30UMJ-2 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30UMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 10.5 max 1.3 16 7.0 3.2

C1027

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30KMH-2 HIGH-SPEED SWITCHING USE FS30KMH-2 • 2 .5 V D R IVE • VDSS . •100V • rDS ON (MAX) . 93m£2 • I D .

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30ASJ-2 HIGH-SPEED SWITCHING USE FS30ASJ-02 * * • 4V DRIVE • VD S S .100V • rDS ON (MAX) . 84mQ

Contextual Info: I MITSUBISHI Neh POWER MOSFET FS30SMH-2 HIGH-SPEED SWITCHING USE OUTLINE DRAWING • 2.5V DRIVE • V D SS .100V • rDS ON (MAX) .93mQ • Id . 30A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SMJ-2 HIGH-SPEED SWITCHING USE FS30SMJ-02 • 4V DRIVE • V d s s . 1 o o v • rDS ON (MAX) .84mi2

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SM-6 HIGH-SPEED SWITCHING USE FS30SM-6 • V d s s . 300V • ros ON (MAX) .0 .1 7 Q • I D . 30A

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30UM-2 HIGH-SPEED SWITCHING USE FS30UM-2 • 10V DRIVE • VDSS .100V • rDS ON (MAX) . 100mi2 • I d . 30A

C3EN

Abstract: FS30AS-2
Contextual Info: MITSUBISHI Nch POWER MOSFET FS30AS-2 HIGH-SPEED SWITCHING USE i FS30AS-2 • 10V DRIVE • VDSS .100V • ros ON (m a x ) . 10O m O

"MOSFET A5 VNA

Abstract: 710023
Contextual Info: MITSUBISHI Pch POWER MOSFET FX30SMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE OUTLINE DRAWING Dimensions in mm 4 .5 . 15.9 m ax 1.5 | 3.2 mr ¥ b f * © 5 .4 5 0.6 0( • 4 V D R IV E • V ds s .-1 5 0 V

Contextual Info: MITSUBISHI Neh POWER MOSFET FS30SM-5 HIGH-SPEED SWITCHING USE FS30SM-5 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 fc r 4.4 1.0 5.45 5.45 0.6 4 Q w r q w e r q V d s s .2 5 0 V

Contextual Info: MITSUBISHI N e h POWER MOSFET j FS30VSJ-2 I î I HIGH-SPEED SWITCHING USE I FS30VSJ-02 OUTLINE DRAWING D im en sio n s in m m 10.5M A X. \ 4.5 "T 1.3 \ J X 2 in un CO Ö Ö -h co CO <j> CD _ 1 U 0.8 • 4V DRIVE • V d s s .

FX30UMJ-3

Contextual Info: MITSUBISHI Pch POWER MOSFET FX30UMJ-3 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30UMJ-3 OUTLINE DRAWING Dimensions in mm • 4 V D R IV E • V dss .-1 5 0 V . • rDS O N (M AX) . . 100m i2 • Id . . -3 0 A

FX30KMJ-3

Contextual Info: MITSUBISHI Pch POWER MOSFET RY A N I FX30KMJ-3 . . nge tion ifica t to cha pec al s subjec in f are ot a is n limits his e: T ametric ic t r No e pa Som IM REL P HIGH-SPEED SWITCHING USE FX30KMJ-3 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2