1566 TRANSISTOR Search Results

IRf 48 MOSFET

Abstract: MOSFET 150 N IRF 1RF130 "Power MOSFETs" IRF 130 IRF N-Channel Power MOSFETs IRf 80 12 MOSFET IRF131 irf 80 n IRF 80A IRF133
Contextual Info: - Standard Power M O SFET s File N u m b e r IRF130, IRF131, IRF132, IRF133 1566 Power M O S Field-Effect Transistors N-Cfiannel Enhancement-Mode Power Field-Effect Transistors

duracell NiMH

Abstract: 1504M
Contextual Info: 19-1566; Rev 1; 5/00 Advanced Chemistry-Independent, Level 2 Battery Chargers with Input Current Limiting The MAX1645/MAX1645A are high-efficiency battery chargers capable of charging batteries of any chemistry type. They use the Intel System Management Bus

Contextual Info: 19-1566; Rev 2; 1/01 Advanced Chemistry-Independent, Level 2 Battery Chargers with Input Current Limiting Features The MAX1645 are high-efficiency battery chargers capable of charging batteries of any chemistry type. It uses the Intel System Management Bus SMBus to control voltage and current charge outputs.

Battery charger 240 volt

Abstract: 12v 100 amp battery load circuit diagram of battery charger NICD charger 18V datasheet 1N4148 1N5821 FDS6612A MAX1645 MAX1645A MAX1645AEEI
Contextual Info: 19-1566; Rev 1; 5/00 Advanced Chemistry-Independent, Level 2 Battery Chargers with Input Current Limiting The MAX1645A enhances the accuracy of undervoltage charge current. The MAX1645/MAX1645A provide different performance for thermistor status in the underrange condition. The MAX1645A is recommended for

1N4148

Abstract: 1N5821 FDS6612A MAX1645 MAX1645A MAX1645AEEI MAX1645EEI
Contextual Info: 19-1566; Rev 2; 1/01 Advanced Chemistry-Independent, Level 2 Battery Chargers with Input Current Limiting Features The MAX1645 are high-efficiency battery chargers capable of charging batteries of any chemistry type. It uses the Intel System Management Bus SMBus to control voltage and current charge outputs.

Contextual Info: IS0C0P1 C O d P O N E N T S LTD 7SC J> m HööbSlD ODOOElt, 30e! • ISO 4 8 8 6 5 1 0 ISOCOM INC 75C 0 0 2 1 6 D r-V Z -iS ’ IS660, IS661, IS662 HIGH VOLTAGE PHOTO DARUNGTON ISOLATORS ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted Storage Tem perature. — 55° Cto + 1 5 0 ° C

Contextual Info: • ^53^31 QD2Sbn T3T H A P X N AUER PHILIPS/DISCRETE BSS87 b7E ]> J V N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel vertical D-MOS transistor in a SOT89 envelope. Designed prim arily as a line current interrupter in telephone sets, it can also be applied in other

2SC1541

Abstract: transistor 1548 b 4500cm
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TRANSISTOR BC 137

Abstract: BC107 characteristic BC 108 transistor transistor bc 102 TRANSISTOR BC 109 NT 101 bc108 b 108 b BC 107 transistor transistor bc 107
Contextual Info: 2SC D • û23SbG5 OOGMOÛT T ■ S IE G ^ T -*?-// NPN Silicon Transistors SIEMENS A KTIEN G ESELLSCH A F IC 107 J C 108 - BC 109 B C 107, BC 108, and BC 109 are epitaxial NPN silicon planar transistors in T 0 18 metal case

Contextual Info: NSL35TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 35 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −35 Vdc Collector-Base Voltage

D2395

Contextual Info: 2SB1566 2SD2395 Transistors Power Transistor —60V, —3A 2SB1566 I # Features # Absolute maximum ratings (Ta=25'C ) '1 ) Low Vce(sm>. (T yp .—0.3V at Ic /Ib » — 2 J — 0 .2A ) 2 ) W ide S O A (safe ope ratin g area). 3 ) C om plem ents th e 2S D2395.

DD2030

Abstract: 650V power mosfet 350v 30a to 247
Contextual Info: APT47N65BC3 600V 47A 0.070Ω Super Junction MOSFET TO COOLMOS -24 7 Power Semiconductors D3 • Ultra low RDS ON • Increased Power Dissipation • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package

2n3904 smd pin configuration

Abstract: 560 K. 561 k SMD 653K HCPL-5501 hp 1002 HP 2531 4N55 6N135 6N136 HCPL-2530
Contextual Info: H Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • Dual Marked with Device Part Number and DESC

smd transistor marking DK RH

Abstract: smd diode marking 9 ba smd transistor MARKING ly HP 2531 opto
Contextual Info: Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X *See matrix for available extensions. Features • D ual Marked w ith D evice Part Num ber and DESC

CI 4013B

Abstract: CI 4013 4013B uc 4013 HCC4013BK circuit diagram 4013 hcf4013 4013BE 4013 bf 4013
Contextual Info: ô /• ^-T H O M S O N 07C D I QÜÎ4b31 5 I C O S / M O S " INTEGRATED CIRCUIT h c c /h c f Î2^ 41C 7929225 S G” S • - * S E M IC O N D U C T O R 4oi3B _ :_ u 0864^ ■ r— T-46-07-08 CORP DU AL 'D '- T Y P E FLIP-FLOP • S E T -R E S E T C A P A B IL IT Y

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

kc 5188

Abstract: 7805 Ka 2535 data sheet
Contextual Info: NTC SMD Thermistors With Nickel Barrier Termination NB 12 - NB 20 - NB 21 Chip thermistors are high quality and low cost devices especially developed for surface mounting applications. They are widely used for temperature compensation but can also achieve temperature control of printed circuits.

117L7

Abstract: 2e22 6JV6 6BM8 12EC8 6au5gt 6HF5 6GH8A 6HB5 12U7
Contextual Info: TUNS-SOL TECHNICAL DATA TUNG-SOL ELECTRON TUBES TUNG-SOL ELECTRIC INC. ELEC TR O N T U B E DIVISIO N NEW ARK, N. }. U. S. A. PL ATE 275r OCT. 1 1951 C O P Y R IG H T 1 9 0 1 BY T U N O - S O L E L EC TR IC IN C . E L E C T R O N IC T U B E D IV ISIO N N E W A R K . N E W J E R S E Y . U . S. A.

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

Contextual Info: LMK030xxC Evaluation Board User's Guide November 2013 SNAU040A LMK03000C/01C/02C/33C Precision Clock Conditioner with Integrated VCO Evaluation Board Operating Instructions April 2009 2 SNAU040A LMK030xxC Evaluation Board User’s Guide Copyright 2013, Texas Instruments Incorporated

2sd 5023

Abstract: transistor BC 945 2SC 9012 bc 9013 transistor bc 855 9416A Transistor BC345 BFY41 bcx 388 BC 945
Contextual Info: SEMICONDUCTORS INC OTE D | fil3t.t,5Q □D0Q2C12 7 | T TYPE NO. POLARITY Medium Power Transistors MAXIMUM RATINGS CASE Pd mW HFE •c (A) VCEO IV) min 40 35 40 40 40 VCE(SAT) max ■c (A) (VÏ COMPLE­ MENTARY TYPE *T min (MHz) Cob max (pF) 0.15 1 0.3 1

ASTM-F-150-72

Abstract: MIL-B-117 ASTM-D-991 FED-STD-101 ASTM-D991 Bipolar Static Induction Transistor cmos esd sensitivity MIL-M-55565 ASTM-D-257 SOAR-1
Contextual Info: R-FLOW ESD PROTECTION PROGRAM Linear Technology Corporation R-Flow Reliability has been a key focal point at Linear Technology Corporation LTC since its inception in 1981. Our standard product reliability is monitored closely and we have generated an extensive reliability database for both hermetic and plastic devices. This data is published on a

sas smd transistor

Abstract: adf connector robustness of the buck converter Lm5010 ADC10D1000 13002 TRANSISTOR Coexistence of GSM, WCDMA and LTE LMH2110 4G LTE Building Repeater tdma mac wireless sensor network simulation DP83848-10
Contextual Info: Communications Infrastructure Solutions Guide national.com/comms 2010 Vol. 1 Data Conversion Solutions Amplifier Solutions Temperature Sensor Solutions ADC Diversity PLL PLL Dist. PLL 1:N DAC Power Signal Conditioners ADC SERDES LVDS Solutions Clock and Timing Solutions

Contextual Info: Datasheet 1 Channel Compact High Side Switch ICs 1ch Adjustable Current Limit High Side Switch ICs BD2242G BD2243G ●Key Specifications „ Input voltage range: 2.8V to 5.5V „ ON resistance: VIN=5V 89mΩ(Typ.) „ Current limit threshold: 200mA to 1.7A adjustable