1557 TRANSISTOR Search Results

r58 ah16

Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208
Contextual Info: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's

1557 b transistor

Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Contextual Info: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s

SD1557

Abstract: 2804lSL CB-50 SD1513
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS RÆD [^ ô [i[L[!(g¥(H3(Q)R0[(gS RF & MICROWAVE TRANSISTORS < .400 X .500 2LFL HERM .280 4LSL (A) .400 SQ 2WL FL HERM .250 SQ 2LFL .280 2LFL (A) 960 . 1220 MHz Package Type Config. Vcc CLASS C PULSE FOR DME / IFF / TACAN

transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly

transistor d 1557

Contextual Info: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

Contextual Info: ELANTEC la n te c HIGH PERFORMANCE ANAUQGINTEGSMÊO CIRCUITS D • 312TSS7 Dual Fast Single-Supply Decompensated Op Amp 0000054 E ■ "7- "7 T ~ /Q ' F eatu res G eneral D escrip tion • Inputs and outputs operate at negative supply rail • Gain bandw idth

Contextual Info: ELANTEC 3129557 ELANTEC INC Tfl » E j 312TSS7 DDDD5S2 INC fl 98° 00 55 2 D ~}' 7 ^ - / 5 ^ EL2 O04:/EL,20O4C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS 350M H z FET Buffer M C O O w oo c F i- Features General Description • • • • • • • The EL2004 is a very high-speed, FET input buffer/line driver de­

High-Output Drive Rail-to-Rail Op Amp

Contextual Info: Contents You are in Databook Vol. 3 • Click for Main Menu Micrel Contents Corporate Commitment .4 Corporate History .5

2SC1541

Abstract: transistor 1548 b 4500cm
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: la n te EL2019C c HIOH PERFORMANCE ANAIÜGINTEGRATED CIRCUITS Fast, High Voltage Comparator with Master Stave Flip-Flop F e a tu r e s G e n e ra l D e sc r ip tio n • Comparator cannot oscillate • F ast response—5 ns data to clock setup, 20 ns clock to output

IRF p 536 MOSFET

Abstract: IRF 534 100-C IRFJ220 IRFJ221 IRFJ222 IRFJ223 FJ222 LG t
Contextual Info: HE D I 4ÛSS45Z GaOTSSt, 0 | Data Sheet No. PD-9.403A T-39-11 INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER I « R IRFJSSO HEXFET TRANSISTORS IRFJ221 N-CHANNEL POWER MOSFETs IRFJ222 IRFJ223 200 Volt, 0.8 Ohm HEXFET T h e HEXFET® technology is the key to International

C1812X7R501-103KNE

Abstract: ATC200B103KW50X ELNA America Elna axial ELNA RVS 2643801002 elna 50v sd2918 M113 RVS-50V100M-R
Contextual Info: SD2918 RF power transistor HF/VHF/UHF n-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 30 W min. with 18 dB gain @ 30 MHz Description M113 Epoxy sealed The SD2918 is a n-channel MOS field-effect RF

9033 transistor

Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431

Contextual Info: ELANTEC INC HIGH PERFORMANCE ANAUW INTEGRATED CIRCUITS B I H T S S ? 0000*13.5 1 ELH0033/ELH0033C F ast Buffer A m p lifie t\ - jz y<? ~ 3/ F eatu res G eneral D escrip tion • • • • • • The ELH0033 is a high-spefe<l F E T J^im ^volta^e follower buff­

Contextual Info: C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS E L 2 0 0 8 C 5 5 M H z 1 A m p B u ffe r A m p lifie r F e a tu r e s G eneral D escrip tion • H ig h slew rate—2500 V/ju.s • W ide b andw idth— 100 M H z @ R l = 50ft 55 M H z @ RL = 10ft • O u tp u t curren t— 1A continuous

MRF245

Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1

MRF245

Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780
Contextual Info: 450 .512 MHz class C for mobile applications ii com m unications m obiles UHF, classe C TYPE PACKAGE CONFIG. THOMSON-CSF P ou t Vcc Pin min Wl (V (MHz) (W) Gp min (dB) T O -46 (CB-4011 SD 1132-4 SD 1115-2 SD 1482 XO-72 SL TO-117 SL .280 4L STUD (B) CE

Contextual Info: HE D I MflSSMSa GOGiaHt 7 | Data Sheet No. PD-9.587A INTERNATIONAL R E C T I F I E R ' - T - ß INTERNATIONAL RECTIFIER J - / 3 TO R REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC40 IRFAC42 i LI N-CHANNEL 600 Volt, 1.2 Ohm HEXFET T0-204AA TO-3 Hermetic Package

SD1076

Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510
Contextual Info: 2 - 30 MHz linear SSB applications applications linéaires BLU TYPE PACKAGE CONFIG. THOMSON-CSF V CC V Pout (PEP) Pin fo (W) (W) (MHz) Gp min (dB) IMD max (dB) 4LFL 4LFL 4LFL 4LFL CE CE CE CE 12,5 12,5 12,5 12,5 > > > > 20 50 75 100 30 30 30 30 0,63 1,6

EL200

Abstract: EL2004
Contextual Info: la n t e c HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2004/EL2004C 350 MHz FET Buffer F eatu res G eneral D escrip tion • • • • • • • T he EL2004 is a very high-speed, F E T in p u t b u ffer/lin e driver designed for u n ity gain applications a t b o th h igh cu rren t up to

04ti

Contextual Info: EL2260C/EL2460C to r D ual 'Quad/'JO M fh t'urrrnt f'rtd b a ck 1m plifivrs HIGHPERFORMSNCEANAIOS INTEGRATEDCfflCUrTS F e a tu r e s G en era l D e sc r ip tio n • 130 MHz 3 dB bandwidth Av = + 2 • 180 M Hz 3 dB bandwidth (Av = + 1 ) • 0.01% differential gain,

Contextual Info: EL2160C F eatu res G eneral D escrip tion • 130 M Hz 3 dB bandwidth Ay = + 2 • 180 M Hz 3 dB bandwidth (AV = + 1 ) • 0.01% differential gain, R l = 500ft • 0.01° differential phase, R l = 500ft • Low supply current, 8.5 mA • Wide supply range, ± 2V to ± 15V

Contextual Info: EL2224C é la n te EL2224C Dual, 60 MHz, Unity Gain Stable, Operational Amplifier c HIGH PERFORMANCE ANALOG INTEGRATEDCIRCUITS G eneral D escription Features • • • • • • • • • The EL2224 monolithic dual operational amplifier is an exten­

smd transistor 6c

Contextual Info: SflE D 312^357 □ □ □ 2 5 tiö TTT B E L A EN2016 â b fltK EN2016 F asi QuadNPN A rray äm äB äw äsR M B . 'M3-ZS ELANTEC INC F eatu res G eneral D escrip tion • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis­