1557 TRANSISTOR Search Results

r58 ah16

Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208
Contextual Info: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's

EL2018CN

Abstract: metal detector plans metal detector plans schematic EL2018 EL2018CH EL2018CJ MIL-I-45208A R2KN
Contextual Info: ELANTEC INC Ifl D E | 312=1557 □□□□574 7 HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Fast, High Voltage Comparator with Transparent latch Features General Description • Fast response tim e -2 0 ns • Wide input differential voltage range —24 V on ± 15 V

metal detector plans

Abstract: metal detector plans schematic el2019h/883b EL2019CH EL2019CN EL2019H flipflop application TI5C
Contextual Info: E L A N T E C INC ìfl"" Ì>E| 315=1557 GDOOSflM □ HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Fast, High Voltage Comparator with Master Slave Flip-Flop F e a tu re s G eneral D escription • Comparator cannot oscillate • Fast response - 5 ns data to

Contextual Info: 19-1557; Rev 0; 10/99 +2.7V to +5.5V, Low-Power, Quad, Parallel 8-Bit DAC with Rail-to-Rail Voltage Outputs The MAX5100 provides double-buffered logic inputs: four 8-bit buffer registers followed by four 8-bit DAC registers. This keeps the DAC outputs from changing

Contextual Info: 19-1557; Rev 0; 10/99 +2.7V to +5.5V, Low-Power, Quad, Parallel 8-Bit DAC with Rail-to-Rail Voltage Outputs Features ♦ +2.7V to +5.5V Single-Supply Operation The MAX5100 provides double-buffered logic inputs: four 8-bit buffer registers followed by four 8-bit DAC

Contextual Info: EN2016D 312=1557 OOQllGa M SÔE D ELANTEC INC EN20J6D Die Fast QuadNPN Array A b s o lu te M a xim u m R a tin g s w T~</3 -as t a = 25°c> Pd Power Dissipation Each Transistor 500 mW (T^ = 25°C Ta Operating Temperature Range —55°Cto+125°C Ts Storage Temperature

zener 4b7

Contextual Info: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,

74LS138C

Abstract: metal detector plans schematic metal detector diagram PI metal detector plans q815 EL2018CH EL2018CJ EL2018CN EL2018H 0DD25
Contextual Info: 312*1557 0DD25D7 ^SD MIELA SÖE D ia n t e c EL2018/EL2018 C Fast, High Voltage Comparator with Transparent Latch HIGH PERFORMANCE ANALOG INTEGR/TEC CIRCUITS •■ ELANTEC INC F eatu res G eneral D escrip tion • F ast response time—20 ns • Wide input differential voltage

SRF 3775

Abstract: EL2041CG pot 100K smd smd diode JC 7K EL2041CJ EL2041G EL2041J HA2541 zener 4b7
Contextual Info: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,

basic circuit diagram of AC servo motor

Abstract: 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram
Contextual Info: ELANTEC 4 IE D INC 315=1557 Servo Motor Drivers G0017B3 b ÜELA " T S ¿ -i V 2 S F e a tu r e s G e n e ra l D e sc r ip tio n • No crossover distortion • Low output offset current • Maximum output swing • Short circuit protected • Programmable park voltage

1557 b transistor

Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Contextual Info: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s

EL2070

Abstract: EL2070CN EL2070CS MIL-I-45208A 7710 8 pin dip
Contextual Info: SflE D 312=1557 0002147 S03 « E L A HlGH PERfORMAf^CE ANALOG INTEGRATED CIRCUITS EL2070/EL2070C 200 MHz Current Feedback Am plifier ELANTEC INC F e a tu r e s G e n e ra l D e s c rip tio n • 200 M Hz —3 dB bandwidth, The EL2070 is a wide bandwidth, fast settling monolithic am­

SD1557

Abstract: 2804lSL CB-50 SD1513
Contextual Info: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS RÆD [^ ô [i[L[!(g¥(H3(Q)R0[(gS RF & MICROWAVE TRANSISTORS < .400 X .500 2LFL HERM .280 4LSL (A) .400 SQ 2WL FL HERM .250 SQ 2LFL .280 2LFL (A) 960 . 1220 MHz Package Type Config. Vcc CLASS C PULSE FOR DME / IFF / TACAN

transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly

2N6547

Abstract: 2N6546
Contextual Info: s G S-THOHSON - D7E D | 7 ^ 5 3 7 . : 6 -7 C- 1 5 5- 7 1 D OQlTBia"!] 1" - / S ’- T^- 2N6546 IVIULTIEPITAXIAL MESA NPN H IG H V O L T A G E , H IG H C U R R E N T P O W E R SW IT C H The 2N6546 and 2N6547 are multiepitaxial mesa NPN transistors in Jedec TO-3

Contextual Info: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

transistor d 1557

Contextual Info: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.

Contextual Info: ELANTEC la n te c HIGH PERFORMANCE ANAUQGINTEGSMÊO CIRCUITS D • 312TSS7 Dual Fast Single-Supply Decompensated Op Amp 0000054 E ■ "7- "7 T ~ /Q ' F eatu res G eneral D escrip tion • Inputs and outputs operate at negative supply rail • Gain bandw idth

t559

Contextual Info: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: ELANTEC 3129557 ELANTEC INC Tfl » E j 312TSS7 DDDD5S2 INC fl 98° 00 55 2 D ~}' 7 ^ - / 5 ^ EL2 O04:/EL,20O4C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS 350M H z FET Buffer M C O O w oo c F i- Features General Description • • • • • • • The EL2004 is a very high-speed, FET input buffer/line driver de­

transistor d 1557

Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
Contextual Info: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.

M74 marking

Abstract: BSS83 M74 MARKING J1A 50J2 BSS83 m74 lg
Contextual Info: 71 lOfl2b 001^570 bS3 • P H I N B SS8 3 7 V . MOSFET N-CHANNEL ENHANCEMENT S W I T C H IN G TRA N S IS TO R S ym m etrical insulated-gate silicon MOS fie ld -e ffe c t transistor o f the N-channel enhancem ent m ode type. The tran sisto r is sealed in a S O T 143 envelope and features a lo w ON resistance and lo w capacitances.

transistor D 1557

Abstract: d 1556 transistor transistor d 1556 1557 b transistor transistor 1555
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC

current mirrors wilson

Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair
Contextual Info: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance