154 SILICON DIODE Search Results

Contextual Info: SA 154. SA 160 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160  5   0

Contextual Info: SA 154. SA 160 /5 Surface mount diode Fast silicon rectifier diodes SA 154. SA 160  5   0 1 3) 4) 18 7 *. /9 7 4  /* 7 4  (.) ) ( /* 7 4 .   :   Values Units  < - :   . ;$  . // 7 (  ( * ;  <  6 

Contextual Info: SIEMENS Silicon Schottky Diodes BAT 15- . 2 R • Beam lead technology • Low dimension • High performance • Low barrier ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BAT 15-022 R - Q62702-D1265

GBU 08

Abstract: gbu08 gbu BRIDGE RECTIFIER bridge diode 6A
Contextual Info: Bulletin I2718 rev. E 05/02 6GBU Series 6.0 Amps Single Phase Full Wave Bridge Rectifier Features Diode chips are glass passivated Suitable for Universal hole mounting IO AV = 6A VRRM = 50/ 800V Easy to assemble & install on P.C.B. High Surge Current Capability

BB804

Contextual Info: 32E D • ö23bBSG GQ]»bS7fl 3 M S I P Silicon Dual Tuning Diode BB 804 SIEMENS/ SPCLi SEMICONDS • • • • • _ Application In FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform “ square law" C-V characteristics

Contextual Info: . AL LE GR O K r.i' • • MICROSYSTEMS INC 13 D ■ 0SDM33fl D 0 0 3 7 Ô S Ô T -9 1 -0 1 PROCESS TRJ Process TRJ Silicon Rectifier Diode This silicon epitaxial diode is a 200V, 1.0A rectifier designed to m eet 1N4001, 1N 4002, and 1N 4003 specifications.

1N5333B

Abstract: 1N5379B CD5333B CD5334B CD5335B CD5336B CD5337B CD5338B CD5339B CD5340B
Contextual Info: • ZENER DIODE CHIPS CD5333B • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5333B THRU 1N5379B thru CD5379B • 5 WATT CAPABILITY WITH PROPER HEAT SINKING • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES

Contextual Info: SRA1620 - SRA1660 16A Schottky Barrier Rectifiers PRODUCT SUMMARY Voltage range 20 to 60 Volts Single diode in TO-220A package Rated 16.0 Amps at T c=90°C TO-220A .185 4.70 .175(4.44) .412(10.5) MAX FEATURES .113(2.87) .103(2.62) Low forward voltage drop

15KP

Abstract: 15KP36A 15KP17A 15KP18A 15KP20A 15KP22A 15KP24A Watt Axial Leaded Transient Voltage Suppressor
Contextual Info: Silicon Avalanche Diodes 15000 Watt Axial Leaded Transient Voltage Suppressor RoHS 15KP Series The 15KP Series is designed specifically to protect sensitive electronics equipment from voltage transients induced by lightning and other transient voltage events. These devices are

Contextual Info: Central' Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDSH-3 type is a Silicon Schottky Diode, manufactured in a super-mini surface mount package, designed for fast sw itching applications requiring a low forward voltage drop. Marking Code is S1.

15KP

Abstract: 15KP17A 15KP18A 15KP20A 15KP22A 15KP24A
Contextual Info: Silicon Avalanche Diodes 15000 Watt Axial Leaded Transient Voltage Suppressor RoHS 15KP Series The 15KP Series is designed specifically to protect sensitive electronics equipment from voltage transients induced by lightning and other transient voltage events. These devices are

"Power over Ethernet"

Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. BPTD-6000D-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 POWER OVER ETHERNET (PoE) EQUIPMENT PROTECTION 6.0 KP BIPOLAR TRANSIENT VOLTAGE SUPPRESSOR DIODE CELLS MECHANICAL SPECIFICATION

Contextual Info: BAQ133.BAQ135 Vishay Telefunken Silicon Planar Diodes Features • Very low reverse current Applications Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage

Philips fr 153 30

Contextual Info: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.

ntc 100-9

Abstract: vr photo NTC 005 photo devices 201 photo
Contextual Info: Inventory o f discrete standard Types 9.8. Silicon switching diode Type BA 182 A p p lic a tio n Reverse v o lta g e M a x . perm issible fo rw a rd current l r m A ^ (V) 35 V H F -s w itc h in g diode Reverse cu rren t 1R (n A ) 100 <100 9.9. Optoelectronic Semiconductor devices

MBR0520L

Contextual Info: MBR0520L DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.

l4p diode

Contextual Info: M L 4000 SERIES SILICON DIOXIDE PASSIVATED CHIP PIN DIODES The ML 4P 100 Series of passivated PIN diode chips are produced using m odem processing techniques. Each chip type has an optim ally tailored junction profile and sputtered gold metallisation. Im plicit in our processing techniques

Contextual Info: Schottky Devices MONOLITHIC SCHOTTKY DIODES FOR MIXERS TO 26.5 GHz • Low Capacitance. For Applications to 26.5 GHz • Silicon Dioxide / Silicon Nitride Passivation • Monolithic Glass Support Design • Ultra-Low through High - Barrier Heights • Monolithic Design Insures

H11AA814

Abstract: H11AA814A H11A817 H11A817A H11A817B H11A817C H11A817D 14 pin unknown ic
Contextual Info: 4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototransistor in a 4-pin dual in-line package.

Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:

Contextual Info: Schottky Barrier Diodes SBD MA3X703 (MA10703) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5° 1.50+0.25 –0.05 2 1 (0.65) • IF(AV) = 500 mA rectification is possible • Small reverse current IR. (About 1/10 of IR of the ordinary

MRA333

Abstract: MRA333B 300 volts bridge rectifier
Contextual Info: MRA333, MRA333B silicon Multi-Cell n, power rectifier diode circuits designed for high-current rectifier service. The MRA333 is an air-cooled, integral rectifier assembly engineered for optimum diode/heatsink utilization. MAXIMUM DIODE RATINGS PER CIRCUIT LEG

Contextual Info: BAS16M3T5G Preferred Device Silicon Switching Diode Features • This is a Pb−Free Device MAXIMUM RATINGS TA = 25°C Rating http://onsemi.com Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA

Contextual Info: NEW ENGLAND SEMICONDUCTOR 5KP5.0A thru 5KP110A 5000 WATT SILICON VOLTAGE TRANSIENT SUPPRESSOR AVAILABLE IN VOLTAGES FROM 6.7V THRU 128V The NES 5KP5.0 to 5K.P110A series of transient suppressor diodes are designed to protect electronic equipment from failure due to over voltage transients. The devices