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    152N10NS Search Results

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    152N10NS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC152N10NSFG

    MOSFET N-Channel 100V 9.4A (Ta), 63A (Tc) 8-SON
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    Rochester Electronics BSC152N10NSFG 17,576 1
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    Infineon Technologies AG BSC152N10NSFGATMA1

    Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Vyrian BSC152N10NSFGATMA1 6,580
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    152N10NS Datasheets Context Search

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    BSC152N10NSF

    Abstract: IEC61249-2-21 JESD22
    Contextual Info: 152N10NSF G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • Very low gate charge for high frequency applications R DS on ,max 15.2 mΩ • Optimized for dc-dc conversion ID • N-channel, normal level 63 A PG-TDSON-8 • Excellent gate charge x R DS(on) product (FOM)


    Original
    bsc152n10nsfiec61249-2-21152n10nsjesd22 PDF

    BSC152N10NSF

    Abstract: JESD22
    Contextual Info: 152N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 15.2 mΩ ID 63 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original
    bsc152n10nsf152n10nsjesd22 PDF

    Contextual Info: 152N10NSF G OptiMOS 2 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion V DS 100 V R DS on ,max 15.2 mΩ ID 63 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM)


    Original
    bsc152n10nsf152n10ns PDF