150TT Search Results

S60SC4M

Contextual Info: y j y 2 a / a y h + - K U 7 S W - I * Schottky Barrier Diode Twin Diode O UTLINE D IM E N S IO N S S60SC4M V'J i • Prrsm 77 • lo-o.i -, 4>33±0-2 ^+0.5 5.0 ±0-3 2.2 ±0-5 n-^bgÖT? #i| Date code 40V 60A • T jl5 0 ° C U n it • m m Package I MTO-3P

F30SC3L

Abstract: A27AM
Contextual Info: Schottky Barrier Diode Twin Diode O U T L IN E D IM E N S IO N S SF30SC3L Package I FTO -220 1 0 ±0.2 ^3.2-ai Unit • mm 2.7 ±a: (M Date code 30V 30A an ^3_ Type No. e ' i c 0181 v F30S(C3L M • T jl5 0 ° C Polarity • 1 £ V f = 0.45 V # Prrsm t j ^ y ' j i f f i l i

A79T

Contextual Info: THIS DRAWING CONTAINS INFORMATION PROPRIETARY TO ADVANCED INTERCONNECTIONS CORPORATION. ANY REPRODUCTION, DISCLOSURE OR USE OF THIS DRAWING IS EXPRESSLY PROHIBITED EXCEPT A S ADVANCED INTERCONNECTIONS CORPORATION MAY OTHERWISE AGREE IN WRITING. DETAIL FOR KI5

Contextual Info: Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS SF30SC4 40V 30A • T jl5 0 ° C • P rrsm 77 V J' i f f i t l • * e » E 2kVffiE m m •S R S Ü n y jK — P • D C /D C •W M , tf- h s OAHtg •£ < § . RATINGS Absolute Maximum Ratings a Item

Contextual Info: S/as/h=*P- AUT' Schottky Barrier Diode OUTLINE DIMENSIONS DF30SC4M U n it • m m Package I STO-220 I n 9 ±0.5 nyH B -^ W 40V 30A >SM D >Tjl50°C y 'j i >Prrsm tj ^ ffiti n m -x m z a m m >SRS;H iD C /D C n y jK -z (2 )@ (D m m s t f - h s o A H tg l i S f e s 7tt—

Contextual Info: S /avM *- KU7 S W - I * Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D5SC4MR 40V 5A > T jl 50°C Prrsm 77 >7,llÆ -,lbK V 'J i ffill > S R S ;H > D C /D C m m s t f - h s o A H tg ijife s 7t RATINGS Absolute Maximum Ratings a Item 5 Symbol Conditions

westinghouse transistors

Abstract: westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470 2N3470-73 2N2226
Contextual Info: 13 O e : rn m x H 'ZL n ! ! i Page 1 S ilico n P ow er T ra n s is to rs U ltra-H igh G ain J E D E C T y p e s 2N2226-33 2N3470-77 Wesîinghouse -J IM vO O IM 10 Amperes, 150 Watts Collector-to-Emitter Voltage 50 to 200 Volts Ap p licatio n Therm al C h a ra cteristics

Schottky Diode Marking UX

Abstract: AX057 TVR 06 diode D1NS4
Contextual Info: 5 /a s /h = * P - A U T ' S H '* ^ Schottky Barrier Diode n r S / V J L ' & ' i ’X — F Axial Diode OUTLINE DIMENSIONS D1NS4 Unit • mm Package I AX057 40V 1A r ^2 11 - If 1 </>2.6± • T jl5 0 ° C • P rrsm I 7

Contextual Info: n - n x — K ïÎ'n .— i> Diode Module V 'C X - Y - Super Fast Recovery Diode OUTLINE DIMENSIONS D 2 4 0 L C 4 0 400V 240 A >trr 150 ns > F A s D 7 t t 'iy h RATINGS Absolute Maximum Ratings a a Item Storage Temperature Operating Junction Temperature Maximum Reverse Voltage

Contextual Info: n - n x V 'C X - Y - Super Fast Recovery Diode Single Diode OUTLINE DIMENSIONS D10L20U 200V 10A • tr r 3 5 n s • 7 ,llÆ - ,lb K m m •SRSÎÜ • 7 5 - r jn - f- ju •^ B s O A .P ,^ • il i â s FA RATINGS Absolute Maximum Ratings a Item a V rm Average Rectified Forward Current

Contextual Info: S IL IC O N M O N O L IT H IC B IP O L A R D IG IT A L IN T E G R A T E D C IR C U IT TD62307P/F 7CH LOW SATURATION SINK DRIVER The TD62307P, TD62307F are comprised of seven NPN low saturation drivers. All units feature integral clamp diodes for switching

F11201

Abstract: lf13331n LF13201 LF11331D lf13331
Contextual Info: 2 3 National Semiconductor Quad SPST JFET Analog Switches LF11331, LF13331 LF11332, LF13332 LF11333, LF13333 LF11201, LF13201 LF11202, LF 13202 4 Normally Open Switches with Disable

Contextual Info: y j y 2 /a y h + - KU7 S W - I * a Schottky Barrier Diode Tw in D io d e OUTLINE DIMENSIONS D4SC6M 60V 4A • T jl5 0 ° C • Prrsm 77 V 'J i ffiti m •S R S Ü • D C / D C n y j { — $> • W M , t f - h s O A H tg •£ < § . RATINGS • $ É ÌÌIi;£ / E !Ì&