150MA Search Results

ST NE556

Abstract: NES56 NE556J NE556 applications NE555
Contextual Info: NES56, SA556, SE556, SE556C DUAL PRECISION TIMERS SLFS023A - A P R IL 1978 - REVISED O CTO BER 1992 • Two Precision Timing Circuits per Package • Astable or Monostable Operation • TTL-Compatible Output Can Sink or Source Up to 150mA • Active Pullup or Pulldown

UM61256FK-15

Abstract: um61256fs 15 UM61256FS-15 um61256f um61256fk15 UM61256FK UM61256FM-25 um61256 UM61256FK-12 um61256fs
Contextual Info: UM61256F Seríes 32K X a High Speed CMOS SRAM Features • * ■ ■ ■ Single +5V power supply ■ Access times: 12 /15/2 5 ns max. ■ Current: Operating: 150mA (max.) Standby: 12mA (max.) ■ Full static operation, no clock o r refreshing required Directly TTL compatible: All inputs and outputs

Contextual Info: T O SH IB A 2SC4738 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC4738 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V C E O = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (I q = 0.1mA) / hpg (I q = 2mA) = 0.95 (Typ.)

Contextual Info: TD62007P TD62007P DAR LINGTON BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC D R IV E R Features • • • • Output Rating . 22v/150mA Output Clamp Diodes Inputs Compatible with 9 % 15V P-MOS, C-MOS Protective Diodes Against a Negative Input Voltage

Contextual Info: 2SC4116 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 16 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AM PLIFIER APPLICATIONS. • High Voltage and High Current : VcEO = 50V, Ic = 150mA (Max.) Excellent hpg Linearity : hpE (Ic = 0.1mA) / hpg (Ic = 2mA) = 0.95 (Typ.)

8 pin ic 3773

Abstract: C 5763 transistor
Contextual Info: ◆Low Power Consumption : 25 A TYP. ◆Dropout Voltage : 30mA @ 60mV : 100mA @ 200mV ◆Maximum Output Current : 150mA (300mA=XC6209 E to H Types) ◆Highly Accurate :±2% (±30mV less than 1.5V) ◆Output Voltage Range : 0.9V ~ 6.0V (50mV Increments)

LBR2012T100K

Contextual Info: Spec Sheet INDUCTORS Wire-wound Chip Inductors LB series LBR2012T100K Features Item Summary 10 H(±10%), 150mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions

Contextual Info: LP3990 www.ti.com SNVS251H – MAY 2004 – REVISED OCTOBER 2008 LP3990 150mA Linear Voltage Regulator for Digital Applications Check for Samples: LP3990 FEATURES APPLICATIONS • • • • • • • 1 2 1% Voltage Accuracy at Room Temperature Stable with Ceramic Capacitor

B941

Abstract: B 941 2SD1224
Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SD1224 PULSE MOTOR DRIVE, HAMMER DRIVE APPLICATIONS. SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm &8MAX. FEATURES : 1 . High DC Current Gain : hpE=¿*000(Min.) (Vc e =2V, Ic=150mA) . Low Saturation Voltage

75V 150mA Diode

Contextual Info: COMPUTER DIODE 1c i r 150mA Switching Diode vy i" 1N4153, JAN, JANTX & JANTXV I N 4153 1N4534, JAN, JANTX & JANTXV 1N4534 FEATURES • • • • DESCRIPTION This device is particularly suited to applications where tightly controlled forward characteristics and fast recovery

Contextual Info: FS8832<Preliminary> 150 mA Low Noise LDO Linear Regulator General Description The FS8832 is a low-noise, low-dropout linear regulator that operates from 2.5V to 6.5V input voltage range and delivers up to 150mA output current. Typical output noise for the device is just

SOT23-6 MARKING pg

Abstract: ADVANCED COMMUNICATION DEVICES AAT3210-3214 aat3214 analogic device power supply AAT3214IGU-T1 SOT23-6 Marking TM sot-23-6 REGULATOR voltage regulator "sot-23-6" a1sb
Contextual Info: AAT3214 150mA CMOS LDO Adjustable Linear Regulator General Description Features The AAT3214 Low Dropout Linear Regulator is ideal for portable applications where extended battery life is critical. It features low quiescent current 30µA typ , and low dropout voltage

TA78L008AP

Abstract: A78L05 A78L 78LXX
Contextual Info: Voltage Regulators 1C 3-Terminal Regulators 1 Function Type No. TA78DS05BP 5 TA78DS06BP 6 TA78DS08BP TA78DS09BP TA78DS10BP Low output current Low dropout 8 9 TA78DS12BP 12 TA78DS15BP 15 TA78DS05F 5 TA78DS06F 6 TA78DS08F Low output current 8 TA70DSO9F Low dropout

Contextual Info: GaAÄAs IRED a PHOTO-MOS FET TLP595G TELECOMMUNICATION Unit in m m DATA ACQUISITION MEASUREMENT INSTRUMENTATION The T O S H I B A T L P 5 9 5 G condists of an a l u m i n u m g alium ar s e n i d e infra red e m i tting diode o p t i c a l l y coupled to a p h o t o - M O S FET in a eight lead plastic D IP

2SC503

Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Contextual Info: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.

ua723c fairchild

Abstract: A723C A723M NPN 2N 2219 UA723C D1063
Contextual Info: UA723M, UA723C PRECISION VOLTAGE REGULATORS D1063, AUGUST 1972-REVISED OCTOBER 1988 • 150-mA Load Current Without External Power Transistor • Typically 0.0 2% Input Regulation and 0.0 3% Load Regulation uA723M • Adjustable Current Limiting Capability

2N4403

Contextual Info: TOSHIBA 2N4403 Transistor Silicon PNP Epitaxial Type For General Purpose Switching and Amplifier Applications Features • Low Leakage Current - ICEV = -100nA Max. , IBEV = 100nA (Max.) @ VCE = -35V, VBE = 0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage

RJ635

Contextual Info: TOSHIBA GaAs IRED & PHOTO-THYRISTOR TLP741J Office Machine Household Use Equipment Solid State Relay Switching Power Supply The Toshiba TLP741J consists of a photo-thyristor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.

ic 4PC

Abstract: 115b1
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP320,-2,-4 TENTATIVE DATA T L P 3 2 0 U nit in mm T E L E C O M M U N IC A T IO N TLP320 OFFICE M A C H IN E ~ A T ELEP H O N E USE E Q U IP M E N T 3 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.

UM614256

Abstract: HC 3102
Contextual Info: UM614256 Seríes 2 5 6 K X 4 , 3.3V I/O High Speed CMOS SRAM Features • Single +5V power supply 3.3V I/O compatible All inputs and outputs directly TTL com patible Comm on I/O using three-state output Data retention voltage: 3V min. Available in 28-pin SOJ package

Contextual Info: PHOTO RELAY TLP595G T L P 5 9 5 G TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595G consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package.

MG150Q2YS40

Abstract: CV200
Contextual Info: MG150Q2YS40 U nit in mm HIGH POW ER SW ITCHING APPLICATION S. « FAST on T»b# 110 M OTOR CO N TR O L APPLICATION S. • • • • • • High Input Impedance High Speed tf=0.5//s M ax. trr = 0.5/iS(Max.) Low Saturation Voltage : v CE(sat) = 4.0V (Max.)

Contextual Info: TD62307P BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC U n i t in nun TD62 3 0 7 P LOW SATURATION DRIVER _ Features • Low Saturation Outputs VcE sat = 0 - M a x . @ I O U T “1 2 0 m A • O u t p u t R a t i n g .

la 4508 ic pin diagram

Abstract: la 4508 ic diagram LM 4747
Contextual Info: TOKO 1C Data Sheet Inc. TK716xx TK716XXS V O L T A G E R E G U L A T O R W ITH ON/OFF S W IT C H FEATURES Available battery back-up. Internal Reverse Bias Protection High Precision output Voltage ±2% or ±60mV Standard device (±1% or ±40mV) High grade device