UPC1298V
Abstract: FU-672PDF-V620M03 FU-672PDF-V620M05 FU-672PDF-V620M06
Contextual Info: TZ7-01-304A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-672PDF-V620Mxx • 4ch for 50GHz spacing, 150GHz range thermally wavelength tunable A B x Date 5.Oct.’01 C D
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tz7-01-304afu-672pdf-v620mxx50ghz150ghz+4upc1298vfu-672pdf-v620m03fu-672pdf-v620m05fu-672pdf-v620m06
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150ghz
Abstract: FU-675PDF-V620M03 FU-675PDF-V620M04 FU-675PDF-V620M05 FU-675PDF-V620M06 FU-675PDF-V620M08 FU-675PDF-V620M09 FU-675PDF-V620M10
Contextual Info: TZ7-01-305A 1/6 October 5, 2001 Approved Approved Charged K.Masuda Specification of wavelength monitor integrated DFB-LD module Module type: FU-675PDF-V620Mxx • 4ch for 50GHz spacing, 150GHz range thermally wavelength tunable A B x Date 5.Oct.’01 C D
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tz7-01-305afu-675pdf-v620mxx50ghz150ghz+7fu-675pdf-v620m03fu-675pdf-v620m04fu-675pdf-v620m05fu-675pdf-v620m06fu-675pdf-v620m08fu-675pdf-v620m09fu-675pdf-v620m10
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d 1548
Abstract: transistor d 1557 FU-68PDF-V620M07B FU-68PDF-V620M08B FU-68PDF-V620M09B FU-68PDF-V620M10B FU-68PDF-V620M11B FU-68PDF-V620M12B FU-68PDF-V620M13B FU-68PDF-V620M14B
Contextual Info: TZ7-01-228A 1/6 23 August, 2001 Approved Approved Charged Fujinawa Approved Approved Customer SPECIFICATION PROPOSAL for FU-68PDF-V620MxxB (4ch, 150GHz range temperature tunable, Tc=-20~70degC) A B x Date 24.Aug.’01 C D Approved T.Nambara Mitsubishi Electric Corp. reserves the right to change product design and specification without notice.
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tz7-01-228afu-68pdf-v620mxxb150ghz70degc+10d 1548transistor d 1557fu-68pdf-v620m07bfu-68pdf-v620m08bfu-68pdf-v620m09bfu-68pdf-v620m10bfu-68pdf-v620m11bfu-68pdf-v620m12bfu-68pdf-v620m13bfu-68pdf-v620m14b
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uaf4000
Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
Contextual Info: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに
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20ghzuaf4000toshiba smd marking code transistorsmd code marking wl sot23+7rf lnb c band chipsetm74 markingbfg480wsmd transistor n36vhf amplifier module 2450mhztoshiba diode catalogdiode rf detector
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KGA8010
Contextual Info: GTD-18395 Rev. 5.0 1Electronic Components Preliminary KGA8010 This version: Mar. 25, 2002 Previous version: Jan. 2002 Ultra Broadband Distributed Amplifier DESCRIPTION KGA8010 is a broadband distributed amplifier using 0.1um-gate GaAs P-HEMT and coplaner waveguide
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gtd-18395kga801040gb/s50ghz+112dbm
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NN12
Abstract: P35-5200-000-200 switch 40 GHz
Contextual Info: Data sheet Engineering Datasheet MMIC SPST Switch 1 - 50GHz This P35-5200-000-200 engineering datasheet describes a high performance Gallium Arsenide monolithic single pole single throw broadband RF switch optimised for 20-50GHz operation. It is suitable for use in broadband
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50ghzp35-5200-000-20020-50ghz1-50ghz+3462/sm/xxxxx/200nn12switch 40 ghz
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m1305 transistor
Abstract: w431 MRF1421C Diode LT 4104 NJT1946A 7082a NJT1949 magnetron 2j42 MSF1422B magnetron 5kw
Contextual Info: INTEGRATED CIRCUITS BIPOLAR OPERATIONAL AMPLIFIER TY PE s I N G ¥ D U A L Q u A D H E X D E S C R IP T IO N NJMOP-07 NJM318 NJM741 NJM2107F NJM2130 NJM425# NJM5534 NJM 022 N JM 022B NJM 062 N JM 072B N JM 082B NJM353 NJM1458 NJM2041 NJM2043 NJM2068 NJM2082
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njmop-07njm318njm741njm2107f+16njm2130njm425njm5534njm353njm1458njm2041m1305 transistorw431mrf1421cdiode lt 4104njt1946a7082anjt1949magnetron 2j42msf1422bmagnetron 5kw
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uaf4000
Abstract: BF909AR BFG480W uaf3000 N4 MMIC "BAT17" MMBFJ174 TOSHIBA DIODE CATALOG 2SK163 BBY42
Contextual Info: RF֩!ڼ9Ӳ RFѻકⱘᑨ⫼䆒䅵ݠ 2006ᑈ11᳜ থᏗ᮹ᳳ˖ 2006 ᑈ11᳜ ᭛ӊ乎ᑣো: 9397 750 15817 Henk Roelofsˈࡃᘏ㺕 & ᘏ㒣⧚ RF ѻક ᓩ㿔 ៥Ӏᕜ催݈ℸՓ⫼៥Ӏⱘᮄ݀ৌৡ⿄ક⠠ᙼҟ㒡ϔ⠜RFݠ: ᘽᱎ⌺ञᇐԧ˄NXP
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uaf4000bf909arbfg480wuaf3000+6n4 mmicbat17mmbfj174toshiba diode catalog2sk163bby42
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diode varicap BB 112
Abstract: SMD TRANSISTOR MARKING 02N toshiba smd marking code transistor SOT23-6 MARKING 02n smd code marking NEC rf transistor transistor smd marking CODE Wb smd transistor m29 sot343 UXA23465 RF LNB C band chipset smd transistor M26 sot23
Contextual Info: RFマニュアル第10版 RF製品用のアプリケーションおよび設計マニュアル 2007年9月 はじめに 『RFマニュアル』のスペシャル・エディションへようこそ。 『RFマニュアル』も今回で10版 となりました。
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bfu725fdiode varicap bb 112smd transistor marking 02ntoshiba smd marking code transistor+7sot23-6 marking 02nsmd code marking nec rf transistortransistor smd marking code wbsmd transistor m29 sot343uxa23465rf lnb c band chipsetsmd transistor m26 sot23
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KGA8010
Contextual Info: Electronic Components KGA8010 ODHKGA8010-05 Issue Date: Mar. 25, 2002 Preliminary Ultra Broadband Distributed Amplifier DESCRIPTION KGA8010 is a broadband distributed amplifier using 0.1um-gate GaAs P-HEMT and coplaner waveguide technologies. KGA8010 can be used as a multi-purpose
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kga8010odhkga8010-0540gb/s50ghz+112dbm
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U.C. 2003
Abstract: RESISTOR 0201 footprint dimension Chip Resistors Parasitic capacitance 53RD 0201 footprint frequency response of thin film resistors 0201 digest
Contextual Info: Frequency Response of Thin Film Chip Resistors Robert S Johnson, Charles Wakeman, William Cuviello Vishay Thin Film 2160 Liberty Drive Niagara Falls, NY 14304 phone: 716-283-4025 facsimile: 716-283-5932 e-mail: Robert.Johnson@Vishay.com Abstract. High frequency measurements from 0.1 to 40 GHz were
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u.c. 2003resistor 0201 footprint dimensionchip resistors parasitic capacitance53rd+40201 footprintfrequency response of thin filmresistors 0201digest
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