150G Search Results
150G Result Highlights (4)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TN28F010-150-G |
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28F010 - 128K X 8 Flash |
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HM2P07PNK150GFLF |
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Back Plane Connectors,2mm Hard Metric Series,Millipacs, Vertical Header, Type A with Peg 2.5mm, 110 Signal Pin, Press Fit Tail, 250 mating cycles-Rear Plug up and ROHS Compliant | |||
HM2P95PNE150GFLF |
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Back Plane Connectors,2mm Hard Metric Series,Millipacs, Vertical Header, Type DE, 200 Signal Pin, Press Fit Tail, 250 mating cycles-Rear Plug up and ROHS Compliant | |||
HM2P88PNE150GFLF |
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Back Plane Connectors,2mm Hard Metric Series,Millipacs, Vertical Header, Type E, 200 Signal Pin, Press Fit Tail, 250 mating cycles-Rear Plug up and ROHS Compliant |
150G Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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150GC15 | Unknown | The Diode Data Book with Package Outlines 1993 | Scan | 96.11KB | 2 | ||
150GC15 |
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Standard Rectifiers / Fast Recovery Rectifiers / Misc Rectifiers / HEDs | Scan | 102.99KB | 2 | ||
150GC15 |
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150A Iout, 400V Vrrm General Purpose Silicon Rectifier | Scan | 59.71KB | 1 | ||
GD32F150G6U6TR | GigaDevice Semiconductor (Beijing) Inc | 32-bit, Cortex-M3, 72 MHz, 64 KB Flash, 8 KB SRAM, 2.6-3.6 V, -40 to +85 °C, 12-bit ADC/DAC, 2 comp, 6 timers, PWM, 2 SPI/I2C/USART, I2S, HDMI-CEC, TSI, USBD. | Original | ||||
GD32F150G4U6TR | GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Cortex-M3, 72 MHz, 64 KB Flash, 8 KB SRAM, 2.6-3.6 V, -40 to +85 °C, 12-bit ADC/DAC, timers, PWM, SPI, I2C, USART, I2S, HDMI-CEC, TSI, USBD. | Original | ||||
GD32F150G8U6TR | GigaDevice Semiconductor (Beijing) Inc | 32-bit MCU, Arm Cortex-M3, 72 MHz, 64 KB Flash, 8 KB SRAM, 12-bit ADC/DAC, 2 comp, 5x16-bit timers, 32-bit timer, PWM, 2 SPIs, 2 I2Cs, 2 USARTs, I2S, HDMI-CEC, TSI, USBD, 2.6-3.6 V, -40 to +85 °C. | Original |
150G Price and Stock
Kyocera AVX Components KGM15ACG1H150GTCAP CER 15PF 50V C0G/NP0 0603 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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KGM15ACG1H150GT | Digi-Reel | 38,856 | 1 |
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Syfer Technology 111122K00150GQTCAP CER 15PF 2KV C0G/NP0 1111 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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111122K00150GQT | Cut Tape | 22,110 | 1 |
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Cal-Chip Electronics GMC31CG150G100NTCAP1206 COG 15PF 2% 100V |
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GMC31CG150G100NT | Cut Tape | 4,000 | 1 |
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Samtec Inc SLH-030-1.50-G-D-A0.50 MM MICRO BLADE & BEAM ULTRA |
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SLH-030-1.50-G-D-A | Digi-Reel | 1,325 | 1 |
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SLH-030-1.50-G-D-A | 3 Weeks | 1 |
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SLH-030-1.50-G-D-A |
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SLH-030-1.50-G-D-A | 1 |
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KEMET Corporation C0805C150G1GACTUCAP CER 15PF 100V C0G/NP0 0805 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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C0805C150G1GACTU | Cut Tape | 797 | 1 |
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150G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SWT-S1HM-2245Contextual Info: 1 2 3 4 5 6 7 8 9 A A SPECIFICATIONS Contact Resistance: Insulation Resistance: Withstanding: Operating Force: Durability: Operating Temp: Processing Temp: B 70mΩ max 100MΩ min AC 500V for 1 minute 200gf± 150gf 10,000 Cycles Min -10˚C to +60˚C 265˚C for 3 seconds |
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200gf 150gf 469-19esistance: SWT-S1HM-2245 SWT-S1HM-2245 | |
Contextual Info: SKiM 150GD128D Absolute Maximum Ratings Symbol Conditions IGBT 1 2 ( (78 12 : !" 1 SKiM 4 . */0( $ . */ !64" 0( . 3 >= ( 3 = % %78 . */ !64" 0( . 3 %8 . 34 @ =@ : . 3/4 0( |
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150GD128D | |
Contextual Info: SKM 150GB12T4G 27 8& $ / Absolute Maximum Ratings Symbol Conditions IGBT , ; 27 8 ; 6>7 8 @+ 6233 223 - ?3 8 6>3 - 73 - B 23 63 E 27 8 6?3 - ?3 8 6A7 - 73 - ?'3 - 733 - 9 3 :6>7 8 9 3 :627 |
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150GB12T4G | |
Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. LDT—M 3 6 0 4 R I ELECTRO-OPTICAL CHARACTERISTICS Ta =25T PARAMETER MIN PEAK WAVELENGTH 2.1 [0 ,8 8 6 ] 2.5 150G EMITTED COLOR: RED FACE COLOR: GRAY SEGMENT COLOR: WHITE DIFFUSED UNITS TEST COND nm 5.0 AXIAL INTENSITY |
OCR Scan |
100fjA DECL05URE | |
EP2034-150G1Contextual Info: EP2034-150G1 Ver A/0 Enhanced Power LED Revolutionary Light Source Module e-mail:e-power@para.com.tw http://www.para.com.tw FEATURES Conventional LED design : Simple to use High Flux and Low Cost : More competitive advantages in the LED industry Special body frame : Excellent transiting heat from LED chip operating under 150mA. |
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EP2034-150G1 150mA. 150mA 100mA) 150mA) 525nm DS-51-03-0018 EP2034-150G1 | |
Contextual Info: 14.5 1.5*o.i HOLE LAYOUT I W 05 TOP VIEW CIRCUIT DIAGRAM c c C: COMMON PIN Specifications: 0.1A, 30V DC 20mOhm max. lOOMOhm min. at 500V DC for 1 minute 500V AC 50/60Hz, 2mA for 1 minute -10°C to +60°C 10 000 cycles a-b c-b: 220gf +/-10Ogf b-a b-c: 300gf +/-150gf |
OCR Scan |
20mOhm 50/60Hz, 220gf /-10Ogf 300gf /-150gf C5210, | |
A 472GContextual Info: RF INDUCTORS - SURFACE MOUNT SM3G Temperature Stable Tight Tolerance RF Inductors PART L µH ±2% @ MHz NUMBER SM3-100G SM3-120G SM3-150G SM3-180G SM3-220G SM3-270G SM3-330G SM3-390G SM3-470G SM3-560G SM3-680G SM3-820G SM3-101G SM3-121G SM3-151G SM3-181G SM3-221G |
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SM3-100G SM3-120G SM3-150G SM3-180G SM3-220G SM3-270G SM3-330G SM3-390G SM3-470G SM3-560G A 472G | |
F43D
Abstract: F43KU F44D F44KU IEC62
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IEC62 20/box F43D F43KU F44D F44KU | |
VX553
Abstract: 100PPM 25PPM
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HV52-150G HV51-xxxG HV52-xxxG HV53-xxxG 50Vdc. Vx553 VX553 100PPM 25PPM | |
diode A23Contextual Info: SKM 150GB124D Absolute Maximum Ratings Symbol Conditions IGBT %.8 . .; %!8 ? % SEMITRANSTM 3 Low Loss IGBT Modules SKM 150GB124D , 5 13 D BD ? 5 163 7. Characteristics Symbol Conditions IGBT %.8 Typical Applications |
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150GB124D diode A23 | |
Contextual Info: SKM 150GB123D Absolute Maximum Ratings Symbol Conditions IGBT *5 &* &*8 95 SKM 150GB123D 1<58+1& = 1 Typical Applications # 4* /300 & &(8 1 2 /3 70 4* 2 . &( 2 .0 A ?A 1; 2 .30 4* .30 .00 /00 |
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150GB123D 150GB123D 150GAL123D | |
Contextual Info: SKiM 150GD126D Absolute Maximum Ratings Symbol Conditions IGBT ./ 5 ./( 8 SKiM 4 Values * #+ 31 , * #+ 31 ,- * 0 & & ;: & ! . * #+ ,- ! - 0 &: < <5 * 9 5 * #+ 31 , |
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150GD126D 150GD126D | |
151F2FM
Abstract: 151F3FM 150MLAB160 150FC15 150GC15 150JC15 150LC15 150LD11 B2000 150MLAB180
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OCR Scan |
150FC15 150GC15 150JC15 150LC15 150LD11 /VG-216Â 150LD13 150MLAB160 203PJU180 203PJLA200 151F2FM 151F3FM 150FC15 150LC15 150LD11 B2000 150MLAB180 | |
Contextual Info: High Voltage Voltage Film Resistors Resistors Thick Film Welwyn Components F Series F Series Working voltage voltage up up to to 28kV 28kV • Working Resistance up to 150G up to 150G • Resistance Termination variants • Termination Sets suppliedvariants |
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IEC62 20/box | |
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SKM150GB128DContextual Info: SKM 150GB128D - ." ' Absolute Maximum Ratings Symbol Conditions IGBT / )- . % / 1-* . %45 1)* )* & 2* . 13* & )* & 7 )* 1* ; )- . 1-* & 2* . 1* & )* & 11* & -* & 3*= @ 1-* |
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150GB128D SKM150GB128D | |
RLT780-150GSContextual Info: RLT780-150GS TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: single mode Peak Wavelength : typ. 780 nm Optical Output Power: 150 mW Package: 9 mm Electrical Connection Pin Configuration Bottom View n-type PIN |
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RLT780-150GS RLT780-150GS | |
RLT915_150GSContextual Info: RLT915-150GS TECHNICAL DATA High Power Infrared Laser Diode Lasing mode structure: single mode Lasing wavelength: typ. 915 nm Max. optical power: 150 mW Package: 9 mm SOT-148 PIN CONNECTION: 1) Laserdiode anode 2) Laserdiode cathode and photodiode cathode |
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RLT915-150GS OT-148) rlt915 150gs RLT915_150GS | |
S109-M
Abstract: DO-214BA
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OCR Scan |
SG104 SG145 SG150 MSG105 DLSR105 MSG108 SG109 S109-M DO-214BA | |
Contextual Info: VATC233A Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.0p C1/C2 Min. Capacitance Ratio4.6 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.0k f(co) Min. (Hz) Cut-off freq.150G P(D) Max. (W) Semiconductor MaterialSilicon Package StyleN/A |
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VATC233A Voltage30 | |
Contextual Info: VAT233BN18 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.2.2p C1/C2 Min. Capacitance Ratio3.9 V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min.3.0k f(co) Min. (Hz) Cut-off freq.150G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePill-C |
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VAT233BN18 Voltage30 | |
Contextual Info: MA44906B Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.425f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage6.0 Q Factor Min. f(co) Min. (Hz) Cut-off freq.150G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS |
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MA44906B | |
Contextual Info: MA4967D Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.600f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage30 Q Factor Min. f(co) Min. (Hz) Cut-off freq.150G P(D) Max. (W).60 Semiconductor MaterialSilicon Package StyleStR-10 |
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MA4967D Voltage30 StyleStR-10 | |
Contextual Info: SKM 150GB173D Absolute Maximum Ratings Symbol Conditions IGBT *9 &* &*< =9 SKM 150GB173D 6 7 02 ;1 8* 7 . & 7 .1 C 5C 6? 7 .21 8* Typical Applications +* 232 ' 321 +* ,* " 321 ' .011 ,* 4 " |
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150GB173D | |
UPC1298V
Abstract: FU-672PDF-V620M03 FU-672PDF-V620M05 FU-672PDF-V620M06
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TZ7-01-304A FU-672PDF-V620Mxx 50GHz 150GHz FU-672PDF-V620Mxx UPC1298V FU-672PDF-V620M03 FU-672PDF-V620M05 FU-672PDF-V620M06 |