14V 10A MOSFET Search Results

Contextual Info: Rev 01c, May/2005 TarzanTM MQ7250SIP/IBA Non-isolated 10~14VDC input, 0.75~5V output, 10A DC-DC Converter FEATURES Wide operating voltage: 10V ~ 14V Output Current up to 10A Output voltage ripple: 20mVPP High Efficiency 95% Overcurrent /shortcircuit protection

Contextual Info: DP7010 10A DC-DC Intelligent dPOL Data Sheet 8V to 14V Input • 0.7V to 5.5V Output Applications • Low voltage, high density systems with Intermediate Bus Architectures IBA • Point-of-load regulators for high performance DSP, FPGA, ASIC, and microprocessor applications

dale r007f

Abstract: SOD123 12V 0.5W 2R5TPE330M9 C0402C103K3RAC irf7832 KEMET guide C0402C101J5GAC C0402C104K8PAC GRP155R71H472K C0402C472K5RAC
Contextual Info: 19-3409; Rev 0; 9/04 MAX5065 Evaluation Kit Features ♦ 10A Output Current ♦ 250kHz Switching Frequency/Phase ♦ Up to 85% Efficiency ♦ +10V to +14V Input Voltage ♦ VOUT Set to +1.3V Adjustable from +0.6V to +3.3V Component List DESIGNATION QTY 1

Contextual Info: S2206 Data Sheet N-channel SiC power MOSFET bare die VDSS 650V RDS on (Typ.) 120mW ID 29A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

Contextual Info: S2301 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS on (Typ.) 80mW ID 40A*1 lFeatures lInner circuit (D) 1) Low on-resistance (G) Gate (D) Drain (S) Source 2) Fast switching speed 3) Fast reverse recovery (G) 4) Easy to parallel *1 Body Diode

SiC POWER MOSFET

Contextual Info: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

sch2080

Abstract: SCH2080KE
Contextual Info: SCH2080KE SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

dc/tx/1/2/PS/SCT2080KE

Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 (1) (2) (3) Inner circuit (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) (1) Gate (2) Drain (3) Source

sct2080ke

Abstract: SCT2080 sct2080k MOSFET 1200V ROHM Solar Charge Controller driver circuits A1412
Contextual Info: SCT2080KE SCT2080KE N-channel SiC power MOSFET Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain

SiC POWER MOSFET

Abstract: SCT2080 MOSFET 1200V ROHM
Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source

Contextual Info: SCT2080KE N-channel SiC power MOSFET Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode

Solar Charge Controller driver circuits

Abstract: sch2080
Contextual Info: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed

Contextual Info: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

SCT2080KE

Abstract: SCT2080
Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET lOutline VDSS 1200V RDS on (Typ.) 80mW ID 35A PD 179W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode

Contextual Info: SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Data Sheet lOutline VDSS 1200V RDS on (Typ.) 80mW ID 40A PD 262W lFeatures TO-247 lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

Contextual Info: SCT2120AF Data Sheet N-channel SiC power MOSFET lOutline VDSS 650V RDS on (Typ.) 120mW ID 29A PD 165W lFeatures TO220AB (1) (2) (3) lInner circuit 1) Low on-resistance (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel

Contextual Info: SCT2120AF Datasheet N-channel SiC power MOSFET Outline VDSS 650V RDS on (Typ.) 120m ID 29A PD 165W TO220AB Inner circuit Features (2) 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel

Contextual Info: SCH2080KE Datasheet N-channel SiC power MOSFET co-packaged with SiC-SBD Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed 3) Fast reverse recovery

sch2080

Abstract: SCH2080KE SiC POWER MOSFET Solar Charge Controller driver circuits MOSFET 1200V ROHM
Contextual Info: SCH2080KE SCH2080KE N-channel SiC power MOSFET co-packaged with SiC-SBD Datasheet Outline VDSS 1200V RDS on (Typ.) 80m ID 35A PD 179W TO-247 (1) (2) (3) Inner circuit Features 1) Low on-resistance D(2) (1) Gate (2) Drain (3) Source 2) Fast switching speed

Contextual Info: SCT2080KE Datasheet N-channel SiC power MOSFET Outline VDSS 1200V RDS on (Typ.) 80m ID 40A PD 262W Features TO-247 Inner circuit 1) Low on-resistance (2) 2) Fast switching speed 3) Fast reverse recovery *1 (1) Gate (2) Drain (3) Source (1) 4) Easy to parallel

relay 5 pin 12v 6a

Abstract: 14v 10A mosfet regulator 12v with stand by OM9307SP5 OM9307SS OM9308SP5 OM9308SS OM9309SP5 OM9309SS
Contextual Info: Preliminary Data Sheet OM9307SP5 OM9309SP5 OM9308SP5 POWER MOSFET DUAL, HIGH-CURRENT DRIVER MCM IN A PLASTIC AND METAL PACKAGE Versatile, Dual Output Multi-Chip-Modules MCM’s Provide High-Current/High-Voltage Driver Capability In Power SIP FEATURES •

MPS 1213

Abstract: MPS 1213 Integrated Circuit MPS 0826 Si7336A 1RFH7932P6F 3A/MPS 0826 mp8652
Contextual Info: MP8652 15A, 14V, High Frequency Step-Down Converter with Synchronous Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP8652 is a monolithic step-down switch mode converter with a built in internal power MOSFET. It achieves 15A continuous output

lp2937

Abstract: IRF6609 IRF6633 LM2745 MBRS0520 AN-1573
Contextual Info: National Semiconductor Application Note 1573 Ricardo Capetillo May 2007 Introduction Note, increasing the switching frequency results in a lower inductor current ripple and input and output voltage ripple if the component values are kept the same . Monitor the MOSFET junction temperature since switching losses will increase, and do not exceed the maximum junction temperature of the MOSFET. Refer to the MOSFET manufacturer

lp2937

Abstract: mbrs0520 sanyo capacitor 6SVPC220M GRM319R71H104KA01 sl22-E3/2C lp293 IRF6609 IRF6633 LM2747 CRCW060310R0
Contextual Info: National Semiconductor Application Note 1641 Ricardo Capetillo May 2007 Introduction Note, increasing the switching frequency results in a lower inductor current ripple and input and output voltage ripple if the component values are kept the same . Monitor the MOSFET junction temperature since switching losses will increase, and do not exceed the maximum junction temperature of the MOSFET. Refer to the MOSFET manufacturer