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    "Amplifier Modules"

    Abstract: 27dBmW au81 S-AU81
    Contextual Info: S-AU81 RF Power Amplifier Module S-AU81 Power Amplifier Modules for Domestic cdmaOne Unit: mm • GaAs HBT Micro PA on-chip bias circuit and matching circuit · Output power: Po = 27.0dBmW (min) · Gain: Gp = 28.0dB (typ.) · Total current: It (1) = 385 mA (typ.)


    Original     		s-au8114dbmwamplifier modules27dbmw+1au81 PDF

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Contextual Info: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		3sk1143sk126s12552sc2644+14s-av243sk1153sk291s1256s-av26hfet k161k192atransistor c1923c1923 transistork161 jfetfet k241k161 mosfetc1923 transistor basec2498 transistor PDF

    zg 36

    Abstract: S-AU81
    Contextual Info: S-AU81 RF Power Amplifier Module S-AU81 Power Amplifier Modules for Domestic cdmaOne Unit: mm • GaAs HBT Micro PA on-chip bias circuit and matching circuit • Output power: Po = 27.0dBmW (min) • Gain: Gp = 28.0dB (typ.) • Total current: It (1) = 385 mA (typ.)


    Original     		s-au8114dbmwzg 36 PDF