14APR97 Search Results

741J

Contextual Info: Temic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number V G S ioff V ) J3 0 8 - I t o - 6 .5 V (B R )G S S M in (V ) g ft Min (mS) -2 5 8 Id ss M in (m A ) 12 J309 —1 t o —4

2N4416

Abstract: SST4416
Contextual Info: Tem ic 2N4416/2N4416A/SST4416 Semiconductors N-Channel JFETs Product Summary P art Number V GS<off V) V (B R )G S S M i n ( V ) 2N 4416 -< 6 -3 0 2N 4416A - 2 .5 t o - 6 SST4416 -£ 6 g ft M in (mS) lo ss (mA) 4 .5 5 -3 5 4 .5 5 -3 0 4 .5 5 Features Benefits

TN0200T

Contextual Info: Tem ic TN0200T/TS Semiconductors N-Channel Enhancement-Mode MOSFET Product Summary I d A r DS(on) (Q ) TN0200T TN0200TS 0.4 @ VGs = 4.5 V 0.73 1.2 0.5 @ Vos = 2.5 V 0.65 1.1 V d s (V ) 20 Features Benefits • • • • • • • • • • Low On-Resistance: 0.29 Q

CR390

Contextual Info: Tem ic CR160 Series S e m i c o n d u c t o r s Current Regulator Diodes CR160 CR220 CR300 CR390 CR180 CR240 CR330 CR430 CR200 CR270 CR360 CR470 Product Summary T y p ip mA M in P o v (V) Part Number Typ Ip (mA) Min P o v (V) CR160 1.60 100 CR300 3.00 100

High-Speed Analog N-Channel DMOS FETs -TO-72

Abstract: sd5000 sd5000 series 51850
Contextual Info: T em ic SD5000/5400 Series Semiconductors N-Channel Lateral DMOS FETs SD5000I SD5000N SD5001N SD5400CY SD5401CY Product Summary P a rt N um ber V BR DS M in (V ) VGS(th) M a x (V) rDscon) M a x (Q ) Crss M a x (p F ) tON M a x (ns) SD5000I 20 1.5 70 @ VGs = 5 V

DPAD50

Abstract: SSTDPAD100 dpad1
Contextual Info: DPAD/SSTDPAD Series Dual Low-Leakage Pico-Amp Diodes DPAD1 DPAD5 DPAD50 SSTDPAD5 SSTDPAD100 Product Summary Part Number IR Max pA DPAD1 –1 DPAD5/SSTDPAD5 –5 DPAD50 –50 SSTDPAD100 –100 Features Benefits Applications D Ultralow Leakage: DPAD1 <1 pA

2N4858A

Abstract: 2N4856A 4857A 2N4857A Siliconix JFET Duals
Contextual Info: 2N4856A/4857A/4858A N-Channel JFETs Product Summary Part Number VGS off (V) V(BR)GSS Min (V) IDSS Min (mA) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N4856A –4 to –10 –40 50 25 5 4 2N4857A –2 to –6 –40 20 40 5 4 2N4858A –0.8 to –4 –40

TN2010T

Contextual Info: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

2410l

Abstract: ND2406 ND2410L BSS129 ND2406L 2410* mosfet nd2410
Contextual Info: ND2406L/2410L, BSS129 N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V BR DSV Min (V) ND2406L rDS(on) Max (W) VGS(off) (V) ID (A) 6 –1.5 to –4.5 0.23 10 –0.5 to –2.5 0.18 20 –0.7 (min) 0.15 240 ND2410L BSS129 230 Features

TN2010T

Abstract: Marking Code For TN2010 R1 MARKING CODE
Contextual Info: TN2010T N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 200 11 0.8 to 3.0 0.12 Features Benefits Applications D D D D D D D D D D D High-Voltage Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Transistors, etc.

GR-1217-CORE

Contextual Info: 4 3 T H IS D R AW IN G IS U N P U B L IS H E D . 2 R E L E A S E D FO R P U B LIC A T IO N L0C ALL RIGHTS R ESER VED . CO PYRIG H T REVISION S D IS T H D E S C R IP T IO N REVISED PER E C O - 1 1 - 0 0 5 0 3 3 A RK HMR 29M AR1 D D A A A A a fl — A xxxx R h nI A T

2N3819 equivalent

Abstract: transistor 2N3819 2N3819
Contextual Info: 2N3819 N-Channel JFET Product Summary VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) v –8 –25 2 2 Features Benefits Applications D Excellent High-Frequency Gain: Gps 11 dB @ 400 MHz D Very Low Noise: 3 dB @ 400 MHz D Very Low Distortion D High ac/dc Switch Off-Isolation

2N5432

Abstract: 2N5434 5433 2N5433
Contextual Info: 2N5432/5433/5434 N-Channel JFETs Product Summary Part Number VGS off (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) 2N5432 –4 to –10 5 10 2.5 2N5433 –3 to –9 7 10 2.5 2N5434 –1 to –4 10 10 2.5 Features Benefits Applications D D D D D D D D

Contextual Info: VCR2N/4N/7N JFET Voltage-Controlled Resistors Product Summary Part Number VGS off Max (V) V(BR)GSS Min (V) rDS(on) Max (W) VCR2N –7 –25 60 VCR4N –7 –25 600 VCR7N –5 –25 8000 Features Benefits Applications D Continuous Voltage-Controlled Resistance

U401

Abstract: U406 SST404 SST406 U404
Contextual Info: SST/U401 Series Monolithic N-Channel JFET Duals SST404 SST406 U401 U404 U406 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IG Typ (pA) jVGS1 – VGS2j Max (mV) U401 –0.5 to –2.5 –40 1 –2 5 SST/U404 –0.5 to –2.5 –40 1

BS250

Abstract: mosfet bs250 VP0610T TP0610L TP0610T VP0610L
Contextual Info: TP0610L/T, VP0610L/T, BS250 Siliconix P-Ch Enhancement-Mode MOSFET Transistors TP0610L TP0610T VP0610L VP0610T BS250 PRODUCT SUMMARY PART NUMBER V BR DSS MIN (V) RDS(ON) MAX (W) VGS(TH) (V) ID (A) TP0610L –60 10 @ VGS = –10 V –1 to –2.4 –0.18 TP0610T

Contextual Info: TN0201L/0401L, VN0300L/M N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0201L 20 1.2 @ VGS = 10 V 0.5 to 2 0.64 TN0401L 40 1.2 @ VGS = 10 V 0.5 to 2 0.64 VN0300L 30 1.2 @ VGS = 10 V

Siliconix J310

Abstract: SST310 Siliconix N-Channel JFETs U309 J308 J309 J310 SST308 SST309 U310
Contextual Info: J/SST/U308 Series N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 –1 to –6.5 J309 –1 to –4 –25 8 12 –25 10 12 J310 –2 to –6.5 –25 8 24

TN2010

Contextual Info: Temic TN2010T S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistor Product Summary V BR DSS M i n (V ) rDS(on) 200 Max (Q) 11 Features V G S< th)(V ) ID (A) 0.8 to 3.0 0,12 Benefits Low On-Resistance: 9.5 Q Secondary Breakdown Free: 220 V

Contextual Info: Temic VQ3001J/3001P S e m i c o n d u c t o r s N-/P-Ch. Enhancement-Mode MOSFET Transistor Arrays Product Summary V BR DSS M in (V ) r o s i » ) M a x (fi) V e s o u ) (V ) I d (A ) N -Channel 30 1 @ VGS = 12 V 0.8 to 2.5 0.85 P-Chan nel -3 0 2 @ V Gs = - 1 2 V

Contextual Info: Temic DPAD/SSTDPAD Series S e m i c o n d u c t o r s Dual Low-Leakage Pico-Amp Diodes DPAD1 DPAD5 DPAD50 SSTDPAD5 SSTDPAD100 Product Summary Part Number I r Max pA DPAD I -1 DPAD5/SSTDPAD5 -5 DPAD50 -5 0 SST D PA D Î00 -1 0 0 Features Benefits Applications

52426

Contextual Info: MIC TN0601L, VN0606L/M, VN66AFD Semiconductors N-Channel Enhancement-Mode MOSFET Transistors Product Summary P art Number ' BR DSS Min (V) rus(on) Max (Q) VGS(th) (V) I d (A) TN0601L 1.8 @ VGS= 10 V 0.5 to 2 0.47 VN0606L 3 @ VGs - 10 V 0.8 to 2 0.33 VN0606M

4856a

Abstract: 2n4856a 2N485
Contextual Info: Tem ic 2N4856A/4857A/4858A S e m i c o n d u c t ors N-Channel JFETs Product Summary Part Number VQS off 2N4856A - 4 to - 10 -4 0 50 25 5 4 2N4857A - 2 to - 6 -4 0 20 40 5 4 2N 4858A -0 .8 to - 4 -4 0 8 60 5 4 (V) loss Min (mA) V(BR)GSS Min (V) Features iDSjon) Max

DD510

Abstract: 211DE SD211 SOT-143 D5
Contextual Info: Tem ic SD211DE/SST211 Series S e m i c o n d u c t o r s N-Channel Lateral DMOS FETs SD211DE SD213DE SD215DE SST211 SST213 SST215 Product Summary Part Number V BR DS Min (V) VcS(th) Max (V) SD2UDE 30 1.5 45 10 V 0.5 2 SD213DE 10 1.5 45 @ VGS = 10 V 0.5 2 SD215DE