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    14JAN2011 Search Results

    14JAN2011 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 BY - 2 3 1 20 LOC REVISIONS DIST HM ALL RIGHTS RESERVED. 00 P LTR DESCRIPTION F G H DATE DWN APVD REV ECO-11-000935 14JAN2011 LH RA REV ECO-11-010380 20MAY2011 LH RA 10FEB14 JB RA REV PER ECO-14-001886


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    eco-11-000935eco-11-01038014jan201120may2011+510feb14eco-14-00188601oct9626sep9610sep96 PDF

    WJA58

    Abstract: TMS320 TMS320C203 TMS320C209 TMS320C25 TMS320F206 C203 F206 SPRS050 WJ-A58
    Contextual Info: TMS320F206 DIGITAL SIGNAL PROCESSOR SPRS050A - NOVEMBER 1996 - REVISED APRIL 1998 D High-Performance Static CMOS Technology D Includes the T320C2xLP Core CPU D TMS320F206 is a Member of the TMS320C20x Generation, Which Also Includes the TMS320C203, and TMS320C209 Devices


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    tms320f206sprs050at320c2xlptms320c20x+10tms320c203tms320c209tms320c25tms320c5xwja58tms320c203f206sprs050wj-a58 PDF

    SSG4990N

    Abstract: MosFET
    Contextual Info: SSG4990N 10 A, 100 V, RDS ON 81 m Dual-N Channel Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to


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    ssg4990n14-jan-2011mosfet PDF

    SSG9435P

    Contextual Info: SSG9435P -6.5 A, -30 V, RDS ON 49 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to


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    ssg9435p14-jan-2011 PDF

    SSTE32882

    Abstract: dimm pcb layout DDR3 layout TI DDR3 DIMM pinout TE32882
    Contextual Info: SN74SSQE32882 www.ti.com . SCAS857A – MARCH 2008 – REVISED OCTOBER 2008 28-BIT TO 56-BIT REGISTERED BUFFER WITH ADDRESS PARITY TEST


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    sn74ssqe32882scas857a28-bit56-bit+5sste32882dimm pcb layoutddr3 layout tiddr3 dimm pinoutte32882 PDF

    TPS65950A3

    Abstract: C021 TPS65950 microphone capacitor TPS65950 battery charge schematics TPS65950A2 ac overvoltage protection CEA-936A MINI-USB ANALOG CARKIT INTERFACE SPECIFICATION at11dn
    Contextual Info: TPS65950 Integrated Power Management/Audio Codec Silicon Revision 1.2 Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


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    tps65950swcs032etps65950a3c021+6microphone capacitortps65950 battery charge schematicstps65950a2ac overvoltage protectioncea-936a mini-usb analog carkit interface specificationat11dn PDF

    Contextual Info: SN74AHCT1G86Q-Q1 www.ti.com SCLS721 – DECEMBER 2010 SINGLE 2-INPUT EXCLUSIVE-OR GATE Check for Samples: SN74AHCT1G86Q-Q1 FEATURES 1 • • • • • • DCK PACKAGE TOP VIEW Qualified For Automotive Applications Operating Range of 4.5 V to 5.5 V Max tpd of 8 ns at 5 V


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    sn74ahct1g86q-q1scls72110-masn74ahct1g86 PDF

    TO-3PF package

    Abstract: ADS4126 ADS4129 ADS4146 ADS4149 QFN-48 AZ4149
    Contextual Info: ADS4126, ADS4129 ADS4146, ADS4149 www.ti.com SBAS483G – NOVEMBER 2009 – REVISED JANUARY 2011 12-/14-Bit, 160/250MSPS, Ultralow-Power ADC Check for Samples: ADS4126, ADS4129, ADS4146, ADS4149 FEATURES DESCRIPTION • • The ADS412x/4x are a family of 12-bit/14-bit


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    ads4126ads4129ads4146ads4149+6sbas483g12-/14-bit160/250mspsto-3pf packageqfn-48az4149 PDF

    43-m diode

    Contextual Info: SMG2305PE -4.5 A, -20 V, RDS ON 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to


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    smg2305pesc-5914-jan-201143-m diode PDF

    SSD70N04-06D

    Abstract: MosFET
    Contextual Info: SSD70N04-06D 75A, 40V, RDS ON 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power


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    ssd70n04-06do-25200a/us14-jan-2011+1mosfet PDF

    SSY5829P

    Abstract: MosFET Schottky Diode 5V 6A 1206-8CF
    Contextual Info: SSY5829P -2.5 A, -20 V, RDS ON 0.110  P-Channel Enhancement MOSFET With Schottky Diode Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION 1206-8CF The miniature surface mount MOSFETs utilize a


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    ssy5829p1206-8cf14-jan-2011mosfet+1schottky diode 5v 6a PDF

    Contextual Info: SN54LV595A, SN74LV595A 8-BIT SHIFT REGISTERS WITH 3-STATE OUTPUT REGISTERS SCLS414O − APRIL 1998 − REVISED JANUARY 2011 2 15 3 14 4 13 5 12 6 11 7 10 8 9 VCC QA SER OE RCLK SRCLK SRCLR QH′ QC QD QE QF QG QH 16 QC QB 1 15 2 3 14 4 13 5 12 6 11 7 10 8


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    sn54lv595asn74lv595ascls414o000-v+2a114-aa115-a PDF

    Contextual Info: UCC27321-Q1, UCC27322-Q1 SLUSA13B – FEBRUARY 2010 – REVISED FEBRUARY 2011 www.ti.com SINGLE 9-A HIGH-SPEED LOW-SIDE MOSFET DRIVER WITH ENABLE Check for Samples: UCC27321-Q1, UCC27322-Q1 FEATURES 1 • • • • • • • • Qualified for Automotive Applications


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    ucc27321-q1ucc27322-q1slusa13b20-ns+215-ns10-nf PDF

    Contextual Info: PACKAGE OPTION ADDENDUM www.ti.com 14-Jan-2011 PACKAGING INFORMATION Orderable Device Status 1 Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp (3) Samples (Requires Login) UCC2570D OBSOLETE SOIC D 14 TBD Call TI


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    14-jan-2011ucc2570ducc2570dg4ucc2570dtr+6ucc2570dtrg4ucc2570nucc2570ng4ucc3570ducc3570dg4ucc3570dtr PDF

    STW82100

    Contextual Info: STW82100B RF down converter with embedded integer-N synthesizer Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB ■ RF range: 1620 MHz to 2400 MHz


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    stw82100bstw82100 PDF

    STW82100

    Abstract: 7783 STW8210 cmos mixer "CMOS mixer" JC JB jt
    Contextual Info: STW82100B RF down converter with embedded integer-N synthesizer Preliminary data Features • High linearity: – IIP3: +25.5 dBm – 2FRF-2FLO spurious rejection: 77 dBc ■ Noise figure: – NF: 10.5 dB Applications ■ Conversion gain – CG: 8 dB ■ RF range: 1850 MHz to 2400 MHz


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    stw82100bstw821007783stw8210+2cmos mixerjc jb jt PDF

    Contextual Info: UCC2305-Q1 www.ti.com SLUSA23 – DECEMBER 2009 HID LAMP CONTROLLER Check for Samples: UCC2305-Q1 FEATURES 1 • • • • • • • • • • Qualified for Automotive Applications Regulates Lamp Power Compensates For Lamp Temperature Fixed Frequency Operation


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    ucc2305-q1slusa23 PDF

    Contextual Info: SMG2301P -2.6 A, -20 V, RDS ON 130 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure


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    smg2301psc-59sc-59e14-jan-2011 PDF

    SSG4942N

    Abstract: MosFET
    Contextual Info: SSG4942N Dual N-Channel Mode Power MOSFET 4.4 A, 40 V, RDS ON 75 m Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to


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    ssg4942n14-jan-2011mosfet PDF

    SSD70N03-04D

    Abstract: MosFET
    Contextual Info: SSD70N03-04D 75A, 30V, RDS ON 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power


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    ssd70n03-04do-252o-252dth14-jan-2011+1mosfet PDF

    2SA1980

    Abstract: 2SA1980Y 2SA1980G transistor 2sa1980 2SC5343 2SC5343G
    Contextual Info: 2SA1980 -150 mA, -50 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Low collector saturation voltage: VCE sat =-0.3V(Max.) Low output capacitance : Cob=4pF (Typ.)


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    2sa19802sc53432sa1980-o2sa1980-y+92sa1980-g2sa1980-l-100ma-10ma14-jan-20112sa1980y2sa1980gtransistor 2sa19802sc5343g PDF

    DAC56701

    Contextual Info: DAC5670 www.ti.com SGLS394A – MARCH 2010 – REVISED JANUARY 2011 14-BIT 2.4-GSPS DIGITAL-TO-ANALOG CONVERTER Check for Samples: DAC5670 FEATURES • 1 • • 2 • • 14-Bit Resolution 2.4-GSPS Maximum Update Rate Digital to Analog Converter Dual Differential Input Ports


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    dac5670sgls394a14-bitdac56701 PDF

    voice PCM

    Abstract: TPS65950A3ZXN 333 045
    Contextual Info: TPS65950 Integrated Power Management/Audio Codec Silicon Revision 1.2 Data Manual PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not


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    tps65950swcs032evoice pcmtps65950a3zxn+1333 045 PDF

    Sharp GP2D12 distance measuring sensor

    Abstract: GP2D12 of GP2D12 sensor 13 L GP2D12J0000F
    Contextual Info: high performance low power computing Oak Dist Infrared Distance Measuring Sensor Datasheet Revision history Date Doc. Rev. Changes 21-Jun-2011 Rev. 1.4 Disclaimer Update 14-Jan-2011 Rev. 1.3 Modified sample rate range and resolution 29-Oct-2010 Rev. 1.2 Added Operating Temperature Range


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    21-jun-201114-jan-201129-oct-201030-sep-2010+828-feb-200826-june-20072/95/ecsharp gp2d12 distance measuring sensorgp2d12of gp2d12sensor 13 lgp2d12j0000f PDF