1486 DIODE Search Results

thd300

Abstract: MAX104 MAX106 MAX106CHC MAX108 ierc heatsink
Contextual Info: 19-1486; Rev 0; 7/99 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The MAX106 PECL-compatible, 600Msps, 8-bit analog-todigital converter ADC allows accurate digitizing of analog signals with bandwidths to 2.2GHz. Fabricated on

Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

SFDR12

Abstract: MAX106 MAX106CHC MAX108 MAX104 SNR125
Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

XP1059-BD

Abstract: XP1059 XP1059-BD-EV1 BD 583 DM6030HK
Contextual Info: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

XP1059-BD

Abstract: BD 875 DM6030HK XP1059-BD-EV1
Contextual Info: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD August 2010 - Rev 26-Aug-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

727 thyristor

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung + 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl

T 455 THYRISTOR

Abstract: 1055 Datasheet kb 778 LTR-S T1059N T1589N T2159N T308N T458N T459N
Contextual Info: Koppel - Thyristor + Gleichspannung 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl

12f 565

Abstract: DIODE 914 T1059N T1589N T2159N T308N T458N T709N T 455 THYRISTOR
Contextual Info: Koppel - Thyristor + Gleichspannung + 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl

K0,05F

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro

727 thyristor

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung + 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro

stripline directional couplers

Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,

D1809N

Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

Contextual Info: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency

Contextual Info: F112R6A050SC target datasheet flowPACK 1 1200V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A050SC-M430E08 ● 10-F112R6A050SC01-M430E18

a3546

Abstract: Si4662DY V536
Contextual Info: SPICE Device Model Si4662DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A11A1SR is a P-channel Power MOSFET with low

SSOT-25

Abstract: XC74UL00AA
Contextual Info: ◆CMOS 2-Input NAND Gate ◆High Speed Operation : tpd = 2.6ns TYP. ◆Operating Voltage Range : 2V ~ 5.5V ◆Low Power Consumption : 1 A (MAX.) •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XC74UL00AA is a 2-input CMOS NAND Gate, High Speed Operation

s8059

Abstract: Si7166DP si7166
Contextual Info: SPICE Device Model Si7166DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

E0C63158

Abstract: E0C63256 E0C63358 S1C63158 IOC41
Contextual Info: MF1085-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63158 Technical Manual S1C63158 Technical Hardware NOTICE No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any

Contextual Info: MF1085-03 CMOS 4-BIT SINGLE CHIP MICROCOMPUTER S1C63158 Technical Manual S1C63158 Technical Hardware Evaluation board/kit and Development tool important notice 1. This evaluation board/kit or development tool is designed for use for engineering evaluation, demonstration,

SUB60N06-18

Abstract: SUP60N06-18
Contextual Info: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)

6B1 zener diode

Abstract: 5- pin smd IC 775 transistor 335 smd smd transistor 6b-1 SMD 6 PIN IC 2N2222 2n2222 smd transistor transistor 2N2222 SMD configuration transistor 2N2222 SMD smd transistor 3j L05 SMD diode
Contextual Info: SIEMENS LH 1485 OPTICALLY COUPLED HIGH SPEED MOSFET DRIVERS OPTOCOUPLER FEATURES • Fast Turn On • Fast Turn Off • Low Input Current • Isolation Test Voltage, 5300 VACrMS Dimensions in inches mm Pin One ID. 131 [21 f f l .248^(6.30) .256 (6.50) APPLICATIONS