1486 DIODE Search Results

74AC11013

Abstract: 74AC11013D 74AC11013N 74ACT11013D 74ACT11013N AC11013 ACT11013
Contextual Info: Philips Components— Signetics Document No. 853-1486 ECN No. 00730 Date of Issue O ctober 17, 1990 Status Product Specification AC11013: Product Specification ACT11013: Objective Specification Dual 4-input NAND Schmitt-trigger ACL Products QUICK REFERENCE DATA

thd300

Abstract: MAX104 MAX106 MAX106CHC MAX108 ierc heatsink
Contextual Info: 19-1486; Rev 0; 7/99 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The MAX106 PECL-compatible, 600Msps, 8-bit analog-todigital converter ADC allows accurate digitizing of analog signals with bandwidths to 2.2GHz. Fabricated on

Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

sparkle

Abstract: thd300
Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

SFDR12

Abstract: MAX106 MAX106CHC MAX108 MAX104 SNR125
Contextual Info: 19-1486; Rev 1; 11/01 ±5V, 600Msps, 8-Bit ADC with On-Chip 2.2GHz Bandwidth Track/Hold Amplifier The innovative design of the internal T/H, which has an exceptionally wide 2.2GHz full-power input bandwidth, results in high, 7.6 effective bits performance at the

1486 DIODE

Abstract: P32 23 smd smD SCHOTTKY DIODE P6 p28 smd smd schottky diode s4 p35 smd smd schottky diode s4 53 smd p17 smd schottky diode s4 33 smd transistor p17
Contextual Info: ISL6263AEVAL1Z, ISL6263BEVAL1Z Evaluation Boards User Guide Application Note August 11, 2009 AN1486.0 Introduction Interface Connections The ISL6263AEVAL1Z and ISL6263BEVAL1Z evaluation boards demonstrate the performance of the ISL6263A and ISL6263B respectively. The ISL6263A and ISL6263B are

XP1059-BD

Abstract: XP1059 XP1059-BD-EV1 BD 583 DM6030HK
Contextual Info: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD January 2010 - Rev 04-Jan-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

XP1059-BD

Abstract: BD 875 DM6030HK XP1059-BD-EV1
Contextual Info: 13.5-15.0 GHz GaAs MMIC Power Amplifier P1059-BD August 2010 - Rev 26-Aug-10 Features Chip Device Layout 5W Power Amplifier Dual Sided Bias Architecture 28.0 dB Small Signal Gain +36.0 dBm P1dB Compression Point +38.0 dBm Pulsed Saturated Output Power +46.0 dBm Output Third Order Intercept

K0,05F

Abstract: 1398 DIODE 914 TA 685 T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Anschlußspannung 1800 Veff Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Satzstrom Id Verlustl. P d Luftmen. v L Schaltung pro KB Diode D Thyristor T [°C] [A] [W] 25 474 818 1303 840 1219

727 thyristor

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung + 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl

T 455 THYRISTOR

Abstract: 1055 Datasheet kb 778 LTR-S T1059N T1589N T2159N T308N T458N T459N
Contextual Info: Koppel - Thyristor + Gleichspannung 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl

12f 565

Abstract: DIODE 914 T1059N T1589N T2159N T308N T458N T709N T 455 THYRISTOR
Contextual Info: Koppel - Thyristor + Gleichspannung + 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für verstärkte Luftkühlung Temp. tA Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro Anzahl

727 thyristor

Abstract: T1929N T380N T869N
Contextual Info: Koppel - Thyristor + Gleichspannung + 1800 V Sperrspannung Bauelement VDRM/RRM 3600 V - Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro

stripline directional couplers

Abstract: MRFP36030 MRF5S9080NB NONLINEAR MODEL LDMOS MRF377HR5 Product Selector Guide MRF1511NT1 ESD MC13820 MRF377HR3 MRF6S9045NBR1
Contextual Info: RF and IF Quarter 3, 2005 SG1009Q32005 Rev 0 What’s New! Market Product GSM/GPRS Cellular MMM6025 Cellular, GPS, ISM MC13820 TV Broadcast MRF377HR3, MRF377HR5 900 MHz Cellular Base Station MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MRF6S9125NR1, MRF6S9125NBR1, MRF6S9130HR3, MRF6S9130HSR3,

D1809N

Abstract: D1069N D269N D3301N D749N D849N 836 DIODE
Contextual Info: M2 - Schaltung ~ M2K ~ Anschlußspannung 1000 Veff Bemessungs-Gleichspannung Sperrspannung Bauelement n. VDE 0558 VRRM 440 V 3600 V + Kühlblöcke für Luftselbstkühlung Temp. tA Satzstrom Id [°C] [A] Verlustl. P d Luftmen. v L Schaltung pro KB [W] Diode

T1059N

Abstract: T1589N T308N T458N T459N T709N k0 358
Contextual Info: Koppel - Thyristor + Gleichspannung 1100 V Sperrspannung Bauelement VDRM/RRM 2200 V - Kühlblöcke für Luftselbstkühlung Temp. tA [°C] Gleichstrom Verlustl. P d Luftmen. v L Id Schaltung pro KB [A] [W] Diode D Thyristor T Kühlblock KB [ltr/s] Anzahl KB pro

Contextual Info: 10-FZ06NBA110FP-M306L28 target datasheet flowBoost0 600V/110A PS* Features flow0 12mm housing ● *PS: 2x 110A parallel switch 100A IGBT and 99mΩ MOSFET ● high speed IGBT with C6 MOSFET and SiC buck diodes ● high efficiency dual booster ● ultra fast switching frequency

10PZ12B

Contextual Info: 10-PZ12B2A040MR01-M330L68Y target datasheet flowBOOST 0 SiC 1200V/ 40mΩ Features flowBOOST 0 SiC TM ● Rohm SiC-Power MOSFET´s and Schottky Diodes ● Dual Boost Topology ● Ultra Low Inductance with Integrated DC-capacitors ● Extremely Fast Switching with No "Tail" Current

Contextual Info: F106R6A050SB target datasheet flowPACK 1 600V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT3 technology Target Applications Schematic ● Power Regeneration Types ● 10-F106R6A050SB-M435E08 ● 10-F106R6A050SB01-M435E18

Contextual Info: F112R6A050SC target datasheet flowPACK 1 1200V/50A Features flow1 housing ● Inverter, blocking diodes ● Very compact housing, easy to route ● IGBT4 technology Target Applications Schematic ● Power Regeneration Types ● 10-F112R6A050SC-M430E08 ● 10-F112R6A050SC01-M430E18

a3546

Abstract: Si4662DY V536
Contextual Info: SPICE Device Model Si4662DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A11A1SR is a P-channel Power MOSFET with low