145NS Search Results

ADSP-1016JD

Abstract: MPY16HJ d64a f64a trw 1016 ADSP-1016JX mpy-16hj1 ADSP-1016SD trw mpy 16 MPY-16HJ
Contextual Info: ANALOG DEVICES □ FEATURES 16 x 16 Parallel Array M u ltip lier 150m W m ax P ow er Dissipation w ith CMOS Technology 145ns M u ltip ly Tim e Im proved M PY-16HJ Second Source T w o's C om plem ent, Unsigned M a gnitud e or M ixed M o d e M ultiplication

pin compatible with maxim

Contextual Info: ADVANCE INFORMATION /l/l/J X I/l/l First Page of Data Sheet in Preparation P recision M in iD IP A nalog S w itc h e s _ Features 4 4 4 4 4 35£i Max r D S O N 145ns Max Switching 0.035mW Max Power Dissipation CMOS Logic Compatible

ixgx120n60b3

Abstract: 120n60 120N60B3 GenX3TM IXGX120N60B PLUS247 IXGK120N60B3
Contextual Info: IXGK120N60B3 IXGX120N60B3 GenX3TM 600V IGBTs VCES IC110 VCE sat tfi(typ) Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching = = ≤£ = 600V 120A 1.8V 145ns TO-264 (IXGK) Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: um LT1311 TECHNOLOGY Q uad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for O ptical Disk Drives F€fflUR€S D € S C R IP T IO n • Four Complete Current-to-Voltage Converters ■ 14-Lead Small Outline Package ■ Accurate Gain: 20mV/|jA, ±4%

1311 amplifier

Abstract: LT1311
Contextual Info: L ir m LT1311 TECHNOLOGY Q u a d 12MHz, 145ns Settling Precision C u rre n t-to -V o lta g e C o n v e rte r fo r O p tic a l Disk Drives FC n T U IK S Four Complete Current-to-Voltage Converters 14-Lead Small Outline Package Accurate Gain: 20mV/|jA, ±4%

Contextual Info: ANALOG DEVICES □ FEATURES 16x16 Parallel Array Multiplier 150mW max Power Dissipation with CM O S Technology 145ns Multiply Time Improved MPY-16HJ Second Source Tw o's Complement, Unsigned Magnitude or Mixed M ode Multiplication Single + 5 Volt Power Supply Operation

120n60b3

Abstract: IXGX120N60B3 PLUS247 IXGK120N60B3 120N60
Contextual Info: Preliminary Technical Information IXGK120N60B3 IXGX120N60B3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) Medium speed low Vsat PT IGBTs for 5-40kHz switching = = ≤£ = 600V 120A 1.8V 145ns TO-264 AA (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C

MXDG417AK

Abstract: MXDG417DJ MXDG417DK MXDG417DY MXDG419 00239-36
Contextual Info: A D V A N C E IN FO R M A T IO N /M/IXI/I/I First Page of Data Sheet in Preparation P re c is io n M in iD IP A n a lo g S w itc h e s _ ♦ ♦ ♦ ♦ ♦ F e a tu r e s 35iJ Max r o s O N 145ns Max Switching 0.035mW Max Power Dissipation

Contextual Info: H a rris D G 411, D G 412 C l4 1 3 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches August 1993 Features Description ON-Resistance < 35i2 Max • Low Power Consumption PD < 35^W • Fast Switching Action • toN <175ns • tgpp<145ns

TMC216HJ3A

Abstract: MPY016H 216HJ3C TMC216HJ3C TMC216H P1FY p2231 MSP A14 MPY016H trw
Contextual Info: TMC 216H T C M O S Multiplier Features 16x16 Bit, 145ns • Fully TTL Compatible ,1 w V • 145ns M ultiply Time Worst Case The T R W T M C 2 1 6 H is a high-speed 1 6 x 1 6 bit parallel m ultip lier w hich operates at a 145ns cycle tim e (6.9M H z • Low Power CMOS Technology

Contextual Info: LT1311 Quad 12MHz, 145ns Settling Precision Current-to-Voltage Converter for Optical Disk Drives U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1311 is a quad current-to-voltage converter designed for the demanding requirements of photo diode

14-5NS

Abstract: MXDG411 MXDG411DJ
Contextual Info: ADVANCE INFORMATION First Page of Data Sheet in Preparation yi/iyixiyi/i Quad SPST Precision Analog Switches _ F eatures ♦ 35n Max ros<ON ♦ ♦ ♦ ♦ 145ns Max Switching 0.035mW Max Power Dissipation CMOS Logic Compatible Operation from Single +5V to +30V) or

Contextual Info: VCES IC110 VCE sat tfi(typ) IXGK120N60B3 IXGX120N60B3 GenX3TM 600V IGBTs Medium-Speed-Low-Vsat PT IGBTs for 5-40kHz Switching = = ≤£ = 600V 120A 1.8V 145ns TO-264 (IXGK) Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: ADVANCE INFORMATION First P age o f D ata S heet in P reparation P recision M in iD IP A nalog S w itc h e s _Features ♦ 35£i Max ros ON ♦ 145ns Max Switching ♦ 0.035mW Max Power Dissipation ♦ CMOS Logic Compatible ♦ Operation from Single (+5V to +30V) or

Contextual Info: DG411, DG412 Cl4 7 3 ilS H a r r i s UU S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches May 1994 Features Description ON-Resistance < 35C2 Max • Low Power Consumption P0 < 35|iW • Fast Switching Action • tQ|^ <175ns - topp <145ns

Contextual Info: ill h a r fr is W DG411, DG412 S E M I C O N D U C T O R Monolithic Quad SPST CMOS Analog Switches November 1994 Description Features • ON-Resistance <35£l Max • Low Power Consumption P0 <35|iW • Fast Switching Action • ton <175ns ■ tgpp <145ns

trw 016h

Abstract: p626 p929
Contextual Info: TMC 216 H T R Y w CMOS Multiplier Fe a tu re s 1 6 x 1 6 B it, 1 4 5 ns • Fully TTL Compatible • 145ns M u ltip ly Tim e Worst Case The T R W T M C 21 6 H is a high-speed 1 6 x 1 6 bit parallel • Low Power CM O S Technology m ultiplication rate). The multiplicand and the m ultiplier

DG212

Contextual Info: T D UC EN T PR O LA C EM r a t E T O LE REP rt Cente tsc O B S EN D E D m/ p po MM nical Su tersil.co O C n E ch ww.i DataTeSheet NO R o t ur SI L o r w c a t con -INTER 8 1-88 DG412/883, DG413/883 Monolithic Quad SPST CMOS Analog Switches The DG412-13/883 analog switches feature lower analog

AN6027

Abstract: AN6026 151m75
Contextual Info: In-System Programmable Analog Circuit October 2002 Data Sheet Features Functional Block Diagram • Flexible Interface and Programming Control • • • • Full configuration capability, SPI or JTAG modes Unlimited device updates using SRAM register E2CMOS for non-volatile configuration storage

Contextual Info: ANALOG DEVICES □ CMOS 8-Bit Buffered Multiplying DAC AD7524 FEATURES Microprocessor Com patible 6 8 0 0 ,8 0 8 5 , Z80, etc. TTL/CMOS Com patible Inputs On-Chip D ata Latches End P oint Linearity Low Power Consum ption M onotonicity G uaranteed (Full T em perature Range)

4606 mosfet

Abstract: 4606 MOSFET circuit diagram LTM4606V MOSFET 4606 LT 2262 LTM4606IV
Contextual Info: LTM4606 Ultralow EMI 28VIN, 6A DC/DC µModule Regulator Features Description Complete Low EMI Switch Mode Power Supply Wide Input Voltage Range: 4.5V to 28V 6A DC Typical, 8A Peak Output Current 0.6V to 5V Output Voltage Range EN55022 Class B Certified Output Voltage Tracking and Margining

DG417CJ

Contextual Info: 7907 74; Rev 2; 72/96 > V I> JX I> k l Improved, SPST/SPDT Analog Sw itches General D escription New Features Maxim's redesigned DG417/DG418/DG419 precision, CMOS, monolithic analog switches now feature guar­ anteed on-resistance matching 3i2 max between

amidon T200-2

Abstract: 150w mosfet audio amplifier MUR120T3 150w stereo amplifier PCB layout TA0102A TRIPATH TECHNOLOGY T200-2 "subwoofer amplifiers" Speaker 80W STP19NB20
Contextual Info: TECHNICAL INFORMATION Stereo 80W 4Ω Class-T Digital Audio Amplifier Driver using Digital Power ProcessingTM Technology TA0102A February 1999 – Preliminary General Description The TA0102A is an 80W (4Ω), two channel Amplifier Driver Module which uses Tripath’s

Contextual Info: PM-7524/883 CMOS 8-BIT BUFFERED MULTIPLYING D/A CONVERTER P r e c i s i o n M o n o l i t h i c s Inc. 1.0 SCOPE This specification covers the detail requirements for an 8-bit buffered monolithic multiplying CMOS digital-to-analog converter. The internal latches provide direct interface to most