12F10
Abstract: 12F100 12F120 12F20 12F40 12F60 12F80 12FR100 12FR120 12FR60
Contextual Info: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-145-58 12F10 diod 100V 12A 70-145-66 12F100 diod 1000V 12A 70-145-74 12F120 diod 1200V 12A 70-145-82 12F20 diod 200V 12A
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12f1012f10012f12012f20+612f6012f8012fr10012f4012fr12012fr60
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145-16NO1
Abstract: ir 145 a 116-16NO1
Contextual Info: VUB 116 / 145 Advanced Technical Information VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t
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b25/50145-16no1ir 145 a116-16no1 |
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vub 70 -16
Abstract: vub 70 S2M-G ixys vub 70 145-16NO1
Contextual Info: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 10+11 12 Type 13 19+20 V 1600 1600 VUB 116-16 NO1 VUB 145-16 NO1 1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t Conditions Rectifier Diodes
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145-16no1vub 70 -16vub 70s2m-g+1ixys vub 70
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vub 70 -16
Abstract: vub 70 145-16NO1 ixys vub 70 s2mg S2M-G tftF0 ixys vub 70 -16
Contextual Info: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 VRRM 13 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t Conditions Rectifier Diodes
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145-16no1vub 70 -16vub 70ixys vub 70+4s2mgs2m-gtftf0ixys vub 70 -16
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vub 70 -16
Abstract: vub 70 145-16NO1 s2mg tftF0
Contextual Info: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System VRRM 10+11 12 Type 13 19+20 V 1600 1600 VUB 116-16 NO1 VUB 145-16 NO1 1 6+7 4+5 2+3 8+9 VRRM IdAVM IFSM I2t Conditions Rectifier Diodes
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145-16no1vub 70 -16vub 70s2mg+1tftf0
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Contextual Info: SKDT 145 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik SEMIPONTTM 5 Bridge Rectifier SKDT 145 Target Data Features
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vub 70
Abstract: 145-16NO1 ixys vub 70 vub 70 -16
Contextual Info: VUB 116 / 145 VRRM = 1600 V IdAVM = 116/145 A Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 10+11 12 VRRM 13 19+20 Type V 1600 1600 1 VUB 116-16 NO1 VUB 145-16 NO1 6+7 4+5 2+3 8+9 18 17 21+22 Pin arrangement see outline drawing
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145-16no120080513bvub 70ixys vub 70+1vub 70 -16
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marking BSs sot-23
Abstract: Q67000-S132 E6327 marking BSs SOT23 MARKING SBs
Contextual Info: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information
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ot-23q67000-s132e6327sep-13-1996+3marking bss sot-23marking bsssot23 marking sbs
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Contextual Info: BSS 145 Infineon t«ehno!ogi6* SIPMOS Small-Signal Transistor • N channel s \A • Enhancement mode 2 • ^GS th = 1 4 -2-3 V 1 Pin 1 Pin 2 Vbs BSS 145 65 V Type BSS 145 Ordering Code Q67000-S132 0.22 A Pin 3 S G Type VPS05557 flDS(on) Package Marking
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q67000-s132vps05557ot-23e6327+6s35bg5q133777sqt-89b535bq5d13377b235bg5
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E6327
Abstract: Q67000-S132 0051A marking BSs
Contextual Info: BSS 145 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • VGS th = 1.4 .2.3 V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 145 65 V 0.22 A 3.5 Ω SOT-23 SBs Type BSS 145 Ordering Code Q67000-S132 D Tape and Reel Information
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ot-23q67000-s132e63270051a+1marking bss
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diode 14512 H
Contextual Info: Li IXYS Mil 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules lC25 = 160 A Short Circuit SOA Capability ^ ces ” ^ Square RBSOA ^CE sat typ. = ^ Mil MID I Ir 7C ^J 6 0 -+ ^ MDI I 11 l. o1 M : : ^ l iïjÔ jj E 72873 Preliminary data Symbol Conditions Maximum Ratings
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d-68623diode 14512 h |
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SOT23 MARKING SBs
Abstract: VPS05557 marking SBs BSS145 SD marking BSs sot23 siemens
Contextual Info: SIEMENS BSS 145 SIPMOS Small-Signal Transistor h • N channel j\/\ • Enhancement mode 2 • ^GSith = 14 •••2-3 v 1 Pin 1 Pin 2 G Type Vos b BSS 145 65 V 0.22 A Type BSS 145 Ordering Code Q67000-S132 ffDS on) 3.5 n VPS05557 Pin 3 S Package Marking
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vps05557ot-23q67000-s132e6327+6bss145gps05557sot23 marking sbsmarking sbsbss145 sdmarking bss sot23 siemens
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vub145-16noxt
Abstract: vub 145-16noxt
Contextual Info: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16noxtvub145-16noxte7287320110307a+1vub 145-16noxt
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IXYS DS 145
Abstract: diode 14512 H
Contextual Info: ÖIXYS Mil 145*12 A3 MIO 145*12 A3 U m 145-12 A3 IGBT M odules lC25 = 160 A Short Circuit SOA Capability Square RBSOA ^ ces ” ^ ^ C E s a t t yP. = M il MID I ^ ^-2 V MDI E' : : 60—I- isÖL • i : E 72873 P relim in ary data S ym bo l C o n d itio n s
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60--i-d-68623ixys ds 145diode 14512 h |
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vari-l dbm
Abstract: 180I DBM-145
Contextual Info: DBM-145 Subminiature Flatpack Double Balanced Mixer 10-1500 MHz DESCRI PTiON Vari-l Model DBM-145 is a hig1 perfutm.-=e lubmnalwe double ~ mixer utiUzlng precision ~ beam-le8d ~ barrier diodes. The L and R POfts have a b8OOwidth of 10 MHz to 1500 MHz while
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dbm-145inpu881o-wvund88ir8de8i151+43cd1371o-m-0311vari-l dbm180i
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VUB145-16NOXT
Abstract: fast recovery Diode 1200V 200A
Contextual Info: VUB 145-16NOXT Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16noxtvub145-16noxte7287320110907b+1fast recovery diode 1200v 200a
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VUB145-16NOXT
Contextual Info: VUB 145-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.75 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 2.35 V = 108 A
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145-16noxtvub145-16noxte7287320110907b |
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ixys vub 70 -16no1
Abstract: sensor marking code 145A VUB145-16NOXT
Contextual Info: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
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145-16no1vub145-16no1e7287320101007a+3ixys vub 70 -16no1sensor marking code 145avub145-16noxt
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145-16NO1
Abstract: VUB145-16NO1 vub 70 ic MARKING QG E72873 ixys vub 70 -16no1 vub14516no1 sensor marking code 145A
Contextual Info: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
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145-16no1vub145-16no1e7287320101007a+5vub 70ic marking qgixys vub 70 -16no1vub14516no1sensor marking code 145a
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ixys vub 70 -16no1
Abstract: VUB145 VUB145-16NO1 145-16NO1 VUB145-16NOXT E72873 marking ntc 80 ntc application
Contextual Info: VUB 145-16NO1 Three Phase Rectifier Bridge Rectifier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 145 A VF = 2.76 V IC80 IFSM = 1100 A IFSM = 200 A VCEsat = 3.7 V = 100 A
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145-16no1vub145-16no1e72873powe00+620101007aixys vub 70 -16no1vub145vub145-16noxtmarking ntc 80ntc application
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E72873
Abstract: 0443k ic equivalent MID 400
Contextual Info: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 7 6 3 4 5 2 MDI 1 1 3 4 5 Symbol Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW
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e728730443kic equivalent mid 400 |
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Contextual Info: MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IC25 = 160 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 1 7 6 3 4 5 2 MDI 1 3 4 5 1 7 6 3 2 1 4 5 6 7 3 2 2 E 72873 Preliminary data Symbol Conditions Maximum Ratings
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d-68623 |
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AD8066
Abstract: HRA SOT 103-114 AD8065 AD8065ARZ BJT datasheet with i-v characteristics fet preamp schematics for a PA amplifier 02916-E-032 Crosstalk-AD8066
Contextual Info: High Performance, 145 MHz FastFET Op Amps AD8065/AD8066 FEATURES APPLICATIONS Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth G = +1 180 V/ s slew rate (G = +2) Low noise
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ad8065/ad8066ot-23-5d02916-0-8/10ad8066+9hra sot103-114ad8065ad8065arzbjt datasheet with i-v characteristicsfet preampschematics for a pa amplifier02916-e-032crosstalk-ad8066
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DSAI 130A
Abstract: 2224 sr GFIJ ANI 1015
Contextual Info: User's Manual 32 R32C/142 Group and R32C/145 Group User's Manual: Hardware R32C/142 Group and R32C/145 Group User’s Manual: Hardware RENESAS MCU M16C Family / R32C/100 Series All information contained in these materials, including products and product specifications, represents
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r32c/142r32c/145r32c/100r01uh0218ej0110+4dsai 130a2224 srgfijani 1015
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