142T Search Results

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

Contextual Info: 7=12=1237 002^201 T • T -3»3 -Z P \ SGS-THOMSON poæiItLgOTiMOi TIP140T/141T/142T TIP145T/146T/147T S 6 S-TH0MS0N 3DE » LOW VOLTAGE HIGH CURRENT POWER DARLINGTON ADVANCE DATA ■ MONOLITHIC DARLINGTON CONFIGURA­ TION ■ LOW VOLTAGE « HIGH CURRENT ■ HIGH GAIN

tip141 equivalent

Abstract: TIP140 TIP141 TIP142 TIP145T TIP146T TIP147T tip142 equivalent
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

147T

Abstract: TIP147T "Darlington Transistor" TIP146T darlington power transistor 10a pnp darlington to-220 10a TIP145T
Contextual Info: TIP145T/146T/147T PNP Epitaxial Silicon Darlington Transistor Monolithic Construction With Built In Base-Emitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T Equivalent Circuit

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T 1 TO-220 PNP Epitaxial Silicon Darlington Transistor

TIP 41 transistor

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN-MIN hFE=1000 @ Vce=4V, lc = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C om plem ent to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS

tip142

Abstract: TIP140T TIP141T TIP142T 141T
Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

GE636

Contextual Info: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145T/146T/147T HIGH DC CURRENT GAIN-MIN hFE=1000 @ V ce = -4 V , lc = - 5 A T O -2 2 0 MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS DINDUSTRIAL USE C o m p le m e n t to TIP140T/141T/142T

Contextual Info: NPN EPITAXIAL SILICO N DARLINGTON T R A N SIST O R T IPI 40T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 5 T /1 4 6 T /1 4 7 T

NPN Transistor TO220 VCEO 60V IC 5a

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A TO-220 MONOLITHIC CONSTRUCTION IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Complement to TIP145T/146T/147T ABSOLUTE MAXIMUM RATINGS Characteristic

35x08

Abstract: 80028 I34T PZ-8142 bb819 22-I8 AA-8137-032T AZ81 7.5x0.5
Contextual Info: 10 12 13 LOOSE PIECE MATERI AL NUMBE R CONTINUOUS STRIP TAPE MOUNTED ENGINEERI NG MATERI AL ENGINEERI NG NUMB E R NUMB E R NUMB E R 180180012 AA-8I40 180180013 180180031 BB-8I4I 180180033 180180052' P - 8 142 C- 8143 180180054 180180038 5 142T C - 8 I43T

10A5002

Abstract: TIP142T TIP140T TIP141T NPN Transistor VCEO 80V 100V hfe 100
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTO R T IP I 40T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 5 T /1 4 6 T /1 4 7 T

T1P142T

Contextual Info: NPN EPITAXIAL SILICO N DARLINGTON TRAN SISTO R TIP140T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E Complement to TIP145T/146T/147T

142T

Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T 1 TO-220 NPN Epitaxial Silicon Darlington Transistor

TIP146T

Contextual Info: PNP EPITAXIAL SILICO N DARLINGTON TRANSISTO R TIP145T/146T/147T HIGH DC CU RREN T GAIN - MIN hFE = 1000 @ Vce = -4V, IC = -5 A TO-220 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S I S T O R S IN D U S T R IA L U S E Com plem ent to T IP140T/141T/142T

142T

Abstract: SC-75
Contextual Info: BCR 142T NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=22kΩ, R 2=47kΩ 2 C 3 1 R1 VPS05996 R2 1 2 B E EHA07184 Type Marking BCR 142T WZs Pin Configuration 1=B 2=E Package

N Type Clamp Connector RG8

Abstract: CPN-68-RA-1 CPN-8 Belden Wire CPN-68-28 CPN-69-BM-2 RG-450 CP-AD801 CPN-16 CPN-17
Contextual Info: N Connectors INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST Adapters 6 CP-AD800 6 CP-AD801 5 CP-AD803 6 CP-AD812 6 CP-AD850 6 CP-AD851 6 CP-ETN-TF 6 CP-ETN-TM 6 CPFI-ETN-22 4 CPFI-ETN-23 4 CPFI-N-8 4 CPN-1 4 CPN-142T 4 CPN-16 4 CPN-17 4 CPN-2 4

milliohm

Abstract: RG-142 RG 142 connector
Contextual Info: INCHES MILLIMETERS CUSTOMER DRAWINGS AVAILABLE UPON REQUEST Type N Straight Crimp Type Plug - 120 Second Termination - 3 Piece PART NUMBER CPN-142T CABE TYPE RG-142 TFE “A” 1.455 (36.96) CONTACT I.D. .044 (1.12) BODY I.D. .125 (3.18) FERRULE I.D. .220 (5.59)

Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40T/141T/142T HIGH DC CURRENT GAIN - MIN hFE = 1000 @ VCE = 4V, IC = 5A T O -2 2 0 M O N O L IT H IC C O N S T R U C T IO N IN B A S E -E M IT T E R S H U N T R E S IS T O R S IN D U S T R IA L U S E C o m p le m e n t to T IP 1 4 5 T /1 4 6 T /1 4 7 T

142T

Abstract: 141T TIP120 TIP121 TIP122 TIP140T TIP141T TIP142T
Contextual Info: TIP140T/141T/142T TIP140T/141T/142T ◎ SEMIHOW REV.A0,Oct 2007 TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In Base-Emitter Shunt Resistors PNP Epitaxial Silicon Darlington Transistor - High DC Current Gain : hFE=1000 @ VCE= 2V, IC= 5A Min.

Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

NPN Transistor VCEO 80V 100V

Abstract: tip141 equivalent TIP140 TIP140T TIP141 TIP141T TIP142 TIP142T tip142 equivalent
Contextual Info: TIP140T/141T/142T TIP140T/141T/142T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A Min. • Industrial Use • Complement to TIP145T/146T/147T TO-220 1 1.Base 2.Collector 3.Emitter

TIP145T

Abstract: TIP146T TIP147T
Contextual Info: TIP145T/146T/147T TIP145T/146T/147T Monolithic Construction With Built In BaseEmitter Shunt Resistors • High DC Current Gain : hFE = 1000@ VCE = - 4V, IC = - 5A Min. • Industrial Use • Complement to TIP140T/141T/142T TO-220 1 1.Base 2.Collector 3.Emitter

7555-T

Abstract: M1FM3
Contextual Info: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct