1419C Search Results

HL6312G

Abstract: HL6335G HL6336G Hitachi DSA0064
Contextual Info: HL6335G/36G Circular Beam Low Operating Current ADE-208-1419C Z Rev.3 Mar. 2002 Description The HL6335/36G are 0.63 µm band AlGaInP laser diodes can be operated with low operating current. These products were designed by self aligned refractive index (SRI) active layer structure. These are

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

Contextual Info: a FINAL Advanced Micro Devices Am27C64 64 Kilobit 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Fast access time — 45 ns ■ High noise immunity ■ Low power consumption — 20 nA typical CMOS standby current

A769

Abstract: d772 d772 transistor a737 A772 rst SCAC a768 d480 D772 SPECIFICATION A431
Contextual Info: 1. Features • • • • • • • • • • • 1K X 1 Serial EEPROM with Security Logic Two Application Zones Stores and Validates Security Codes Maximum of Four Incorrect Security Code Attempts Provides Transport Code Security Low Voltage Operation: 2.7V to 5.5V

AM27C64

Contextual Info: a Advanced Micro Devices Am27C64 64 Kilobit 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS Latch-up protected to 100 mA from -1 V to • Fast access time V cc + 1 V — 45 ns High noise immunity Versatile features for simple interfacing ■ Low power consumption