14070 Search Results

RF Transistors

Abstract: NY 716
Contextual Info: RF SMRF1812S Q CURVE 100 1.0uH 82uH 90 8.2uH 80 .18uH 70 390uH Q 60 50 40 30 20 10 0.1 1 10 100 1000 Frequency in MHz One Magnetics Pkwy, Gowanda, NY 14070 • t 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

100uH

Abstract: RF Transistors 10uH 15uH ny transistor
Contextual Info: RF SML32 Q CURVE 90 80 .01uH 70 60 10uH 1.2uH Q 50 .15uH 40 100uH 30 20 10 0.1 1 10 100 1000 Frequency in MHz One Magnetics Pkwy, Gowanda, NY 14070 • t 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

Contextual Info: Doc No. TT4-EA-14070 Revision. 5 Product Standards Zener Diode DE2707500L DE2707500L Silicon epitaxial planar type Unit: mm 0.6 For ESD protection 0.13 2 • Features 1.0 1.4  High ESD  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

Contextual Info: Feed-through terminal block - MBK-FS - 1407013 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

Contextual Info: Feed-through terminal block - MBK-FS BU - 1407097 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid

10uH

Abstract: 47uh RF Transistors ny transistor 39uH
Contextual Info: RF SMRF2007 Q CURVE Q VS FREQUENCY 350 300 10uH 250 200 Q 3.9uH 150 47uH 100 1.0uH 50 .47uH .10uH 1 10 100 FREQUENCY IN MHz One Magnetics Pkwy, Gowanda, NY 14070 • t 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

Contextual Info: Extract from the online catalog MBK-FS BU Order No.: 1407097 Feed-through modular terminal block, Connection method: Special and hybrid connection, Cross section: 0.2 mm² - 2.5 mm²,

Contextual Info: Extract from the online catalog MBK-FS Order No.: 1407013 Feed-through modular terminal block, Type of connection: Special and hybrid connection, Cross section: 0.2 mm² - 2.5 mm², AWG 24 - 14,

Contextual Info: POWER INDUCTORS - SURFACE MOUNT Mulitplier from Rated Current SMP1210S Series Derating Curve Ambient Temperature C One Magnetics Pkwy, Gowanda, NY 14070 • (t) 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

Contextual Info: Doc No. TT4-EA-14070 Revision. 6 Product Standards Zener Diode DE2707500L DE2707500L Silicon epitaxial planar type Unit: mm For ESD protection DE2S075 in SSSMini2 type package 0.6 0.13 2 • Features 1.0 1.4  High ESD  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant

ic 14070b

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 14070B M C 14077B CMOS SSI Quad Exclusive “OR” and “NOR” Gates The M C 14070B quad e x c lu s iv e OR gate and the M C 14077B quad exclusive NOR gate are constructed with MOS P-channel and N -channel e n h a n c e m e n t m ode d e v ic e s in a s in g le m o n o lith ic s tru c tu re . These

100uH

Abstract: frequency Magnetics
Contextual Info: RF SML32S Q CURVE Q VS FREQUENCY 80 70 .82uH 60 100uH 50 Q 0.1uH 40 30 10uH 1.2uH 20 10 0.1 1 10 100 FREQUENCY MHz One Magnetics Pkwy, Gowanda, NY 14070 • t 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

diode 716

Abstract: ny transistor RF Transistors Magnetics
Contextual Info: RF SM3 Q CURVE Q VS FREQUENCY 90 80 .01uH 70 0.1uH 60 Q 50 40 1.0uH 30 20 10uH 47uH 10 1 10 100 1000 FREQUENCY MHz One Magnetics Pkwy, Gowanda, NY 14070 • t 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

Contextual Info: Applications Engineer Elgin, IL USA - 140701-NHD Company Overview Newhaven Display is a leading global display company that produces electronic display products for a wide variety of markets and applications. Our products include cutting edge LCD, VFD and OLED technologies.

Contextual Info: RF SMRF5025 Q CURVE 120 100 470uH 1000uH .33uH 80 Q 10uH 60 1.0uH 40 20 0.1 1 10 100 1000 Frequency in MHz One Magnetics Pkwy, Gowanda, NY 14070 • t 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

3300uH

Contextual Info: RF SMRF5025S Q CURVE 120 3300uH 100 470uH 80 .39uH Q 220uH 60 40 3.3uH 20 0.1 1 10 100 1000 Frequency in MHz One Magnetics Pkwy, Gowanda, NY 14070 • t 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

Contextual Info: RF SMRF3013 Q CURVE 120 100 .15uH 1000uH 80 Q 10uH 60 1.0uH 40 180uH 20 0.1 1 10 100 1000 Frequency in MHz One Magnetics Pkwy, Gowanda, NY 14070 • t 716-532-2234 • (f) 716-532-2702 • sales@gowanda.com www.gowanda.com

Contextual Info: Product Number: 1407-0-15-01-11-02-10-0 Description: 1407 - Receptacle With No Tail Accepts .015-.020 diameter leads. Packaging: Packaged in Bulk Mill-Max Part Number Shell Plating Contact Plating 1407-0-15-01-11-02-10-0 200 - 300 " Tin/Lead over Nickel

Cx2829

Abstract: ,national semiconductor Linear brief lb-3
Contextual Info: CX28250 ATM Physical Interface PHY Devices The CX28250 is an ATM-SONET Physical Layer (PHY) device with an integrated, PLL clock and data recovery (CDR) circuit. This device has optimized SONET framer functions for mapping ATM cells to SONET payloads for edge switch applications, and

Contextual Info: 2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 Previous: ADE-208-571B Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.2 Ω typ. (VGS = 4 V, ID = 500 mA) • 2.5 V gate drive devices. • Small package (MPAK)

Contextual Info: 2SK3390 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0208-0400 Rev.4.00 Nov 08, 2007 Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60% min. f = 836 MHz • Compact package capable of surface mounting

Contextual Info: FX30KMJ-06 High-Speed Switching Use Pch Power MOS FET REJ03G1446-0200 Previous: MEJ02G0276-0101 Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : –60 V rDS(ON) (max) : 54 mΩ ID : –30 A Integrated Fast Recovery Diode (TYP.) : 55 ns

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: 2SK2144 Silicon N Channel MOS FET REJ03G1001-0200 Previous: ADE-208-1349 Rev.2.00 Sep 07,2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No Secondary Breakdown Suitable for switching regulator, DC-DC converter