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    onsemi

    onsemi MC14069UBDR2G

    Hex Inverter
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    Master Electronics MC14069UBDR2G 5,000
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    Avnet Americas () MC14069UBDR2G Tape & Reel 15,000 10 Weeks 2,500
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    MC14069UBDR2G Ammo Pack 1
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    Mouser Electronics MC14069UBDR2G 18,897
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    Newark () MC14069UBDR2G Cut Tape 800 1
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    MC14069UBDR2G Tape & Reel 800 100
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    MC14069UBDR2G Cut Tape 2,500
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    MC14069UBDR2G Tape & Reel 2,500
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    MC14069UBDR2G 230 1
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    Rochester Electronics MC14069UBDR2G 7,500 1
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    ComSIT USA MC14069UBDR2G 2,155
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    Avnet Silica MC14069UBDR2G 32,500 12 Weeks 2,500
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    EBV Elektronik MC14069UBDR2G 92,500 13 Weeks 2,500
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    Maritex MC14069UBDR2G 6,251 1
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    onsemi NLV14069UBDTR2G

    Hex Inverter
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    Master Electronics NLV14069UBDTR2G
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    Avnet Americas () NLV14069UBDTR2G Tape & Reel 5,000
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    NLV14069UBDTR2G Tape & Reel 29 Weeks 7,500
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    Mouser Electronics NLV14069UBDTR2G 2,542
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    Newark NLV14069UBDTR2G Tape & Reel 2,500
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    Flip Electronics NLV14069UBDTR2G 7,500
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    onsemi MC14069UBDG

    Hex Inverter
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    Master Electronics MC14069UBDG
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    Avnet Americas MC14069UBDG Tube 2,879 10 Weeks 55
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    Mouser Electronics MC14069UBDG 2,156
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    Newark () MC14069UBDG Bulk 3,530 5
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    MC14069UBDG Bulk 1,210
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    RS MC14069UBDG Bulk 1
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    Bristol Electronics MC14069UBDG 55
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    Rochester Electronics MC14069UBDG 41,374 1
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    TME MC14069UBDG 94 1
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    Avnet Asia MC14069UBDG 10 Weeks 6,270
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    Avnet Silica MC14069UBDG 3,355 12 Weeks 55
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    EBV Elektronik MC14069UBDG 660 13 Weeks 55
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    Vyrian MC14069UBDG 7,986
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    onsemi NLV14069UBDR2G

    - Tape and Reel (Alt: NLV14069UBDR2G)
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    Avnet Americas () NLV14069UBDR2G Tape & Reel 7,500
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    NLV14069UBDR2G Tape & Reel 10 Weeks 7,500
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    Mouser Electronics NLV14069UBDR2G 868
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    Newark NLV14069UBDR2G Tape & Reel 2,500
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    ComSIT USA NLV14069UBDR2G 1,311
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    EBV Elektronik NLV14069UBDR2G 13 Weeks 2,500
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    Flip Electronics NLV14069UBDR2G 20,000
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    onsemi MC14069UBD

    Inverter 6-Element CMOS 14-Pin SOIC Rail - Rail/Tube (Alt: MC14069UBD)
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    Component Electronics, Inc MC14069UBD 75
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    14069U Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CI4069B

    Abstract: HD14069 CI406 HD14069UB
    Contextual Info: H D 14069U B H ex I n v e r t e r PIN ARRANGEMENT FEATURES Quiescent Current - 0.5nA typ/pkg @5V Noise Im m unity = 45% of V pf typ Capable of Driving One Low-power Schottky TTL Load Over the Rated Temperature Range Pin-for Pin Replacements for CD4069B and M CI4069B Series


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    hd14069ubcd4069bci4069bhd14069+1ci406 PDF

    14069U motorola

    Abstract: 14069U 74HCU04 st 74HCU04M motorola 14069u
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HCU04 Hex U nbuffered Inverter H igh Perform ance Silicon-Gate C M O S The M C 5 4 /7 4 H C U 0 4 is identical in pinout to the L S 0 4 and the M C 14069U B . The SmBH tTTa 14 li II II II “ J SUFFIX CERAMIC CASE 632-08


    OCR Scan
    mc54/74hcu0414069uhcu041/6hcu04+414069u motorola74hcu04 st74hcu04mmotorola 14069u PDF

    14069U

    Abstract: MC14069UBCP MC14069UB CD4069UB MC14069UBD MC14069UBDR2 MC14069UBDT MC14069UBDTEL
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubmc14069ubcpr14525+6mc14069ub/d14069umc14069ubdmc14069ubdr2mc14069ubdtmc14069ubdtel PDF

    14069ug

    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubmc14069ub/d14069ug PDF

    14069U motorola

    Abstract: mc14069ub motorola 14069u 14028B
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14028B BCD-To-Decimal Decoder Binary-To-Octal Decoder L SUFFIX CERAM IC CASE 620 The MC14028B decoder is constructed so that an 8421 BCD code on the four inputs provides a decimal o n e -o f-te n decoded output, while a 3 -b it


    OCR Scan
    mc14028bmc14028b/dc14028b/d14069u motorola+3mc14069ub motorola14069u14028b PDF

    14069U

    Abstract: MC14069UBCP CD4069UB
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubpdip-14mc14069ubcp+2soic-1414069u PDF

    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubpdip-14soic-1414069ug+3mc14069ubcpcd4069ubmc14069ub/d PDF

    14069UG

    Abstract: MC14069UBCP MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubsoic-1414069ug+4mc14069ubcpmc14069ubcpgmc14069ubdmc14069ubdg PDF

    14069U

    Abstract: MC14069UBD MC14069UBFL1 MC14069UB gate no MC14069UBCP Enhancemen to-92
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubmc14069ubcpmc14069ubfel+7mc14069ubfl1mc14069ubd51a-03mc14069ubdr214069umc14069ub gate noenhancemen to-92 PDF

    14069ug

    Abstract: 14069ug datasheet MC14069UBCP 14069u MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG 14069
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubsoic-14mc14069ub/d+814069ug14069ug datasheetmc14069ubcp14069umc14069ubcpgmc14069ubdmc14069ubdg14069 PDF

    14538B MOTOROLA

    Abstract: ON Semiconductor CMOS Logic Data 14541b IC 74175 MC14001 cd4000 Przedpelski mc14538bcp equivalent MC14024BCP AA aiken segment
    Contextual Info: DL131/D Rev. 4, Mar-2000 ON Semiconductor CMOS Logic Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    dl131/dmar-2000r14525dl131+1014538b motorolaon semiconductor cmos logic data14541bic 74175mc14001cd4000przedpelskimc14538bcp equivalentmc14024bcp aaaiken segment PDF

    14069UG

    Abstract: MC14069UBCP MC14069UBCPG MC14069UBDG CD4069UB MC14069UB MC14069UBD
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubsoic-1414069ug+4mc14069ubcpmc14069ubcpgmc14069ubdgmc14069ubd PDF

    D4515

    Abstract: d4518bc 74c920 74C929 4031B JRC 4069UBF D4518 74ls247 fairchild linear integrated circuits 74c14
    Contextual Info: o #1 ’ FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C a lifo rn ia 9 4 0 4 2 ‘ 1977 F a irch ild C am era and In stru m e n t C o rp o ra tio n /4 6 4 E llis S treet. M o u n ta in View. C a lifo rn ia 94042 / 4 15 9 6 2-5 0 1 1/TW X 910-3


    OCR Scan
    24-pind4515d4518bc74c920+774c9294031b jrc4069ubfd451874ls247fairchild linear integrated circuits74c14 PDF

    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubmc14069ub/d PDF

    14049U

    Abstract: 14069U UPD4021 upd4051 HD14584B 7-stage frequency divider hd14011b hd14052b harris CD4538B UPD4030
    Contextual Info: TOSHIBA [11 [1 1 ] ] TC4000B/TC4500B V U -X ^l ^pnp ^ ms: HARRIS M O T O R O LA □3 un&mm FAIRCHILD Q U A D 2 INPUT NOR GATE TC4001B CD4001B MC14001B HD14001B CD4001B ¿¿PD4001B Q U A D 2 INPUT N A N D GATE TC4011B CD4011B MC14011B HD14011B CD4011B ¿¿PD4011B


    OCR Scan
    tc4000b/tc4500btc4001btc4011btc4013b+16tc4015btc4017btc4020btc4021btc4024btc4027b14049u14069uupd4021upd4051hd14584b7-stage frequency dividerhd14011bhd14052bharris cd4538bupd4030 PDF

    14069u

    Abstract: MC14069UBCP MC14069U MC14069UB MC14069UBD MC14069UBDR2 MC14069UBDT CD4069UB
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubmc14069ubcpr14525+6mc14069ub/d14069umc14069umc14069ubdmc14069ubdr2mc14069ubdt PDF

    UAA2001

    Abstract: MC8500 micromodule m68mm19 1N9388 74ALS643 2N6058 MC145026 2N5160 MOTOROLA MC3340 equivalent pn3402
    Contextual Info: MOTOROLA Semiconductors THE EUROPEAN MASTER SELECTION 1982 The total num ber of standard Sem iconductor products available from M otorola ex­ ceeds 15 0 0 0 device types. To most of our custom ers this total presents an overw helm ing choice. The European Master Selection lists approxim ately 4 0 0 0 preferred devices that re­


    OCR Scan
    0hf400hf600hf806fp10+126f10070hf10uaa2001mc8500micromodule m68mm191n938874als6432n6058mc1450262n5160 motorolamc3340 equivalentpn3402 PDF

    14069U

    Abstract: MC14069UBCP MC14069UBCPG CD4069UB MC14069UB MC14069UBD MC14069UBDG
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubpdip-14mc14069ub/d+514069umc14069ubcpmc14069ubcpgmc14069ubdmc14069ubdg PDF

    14069U

    Abstract: KBR-455 avx CAPA KBR455BK
    Contextual Info: ¿WM KyoEERa AVX/Kyocera Ceramic Resonators GENERAL DESCRIPTION resonance frequency depends on the vibration mode as shown in Figure 1. A basic feedback circuit is shown in Figure 2. It consists of an am plifier with a 180' phase shift and attenuator. A negative polar output volt is obtained with an amplitude


    OCR Scan
    14069ukbr-455avx capakbr455bk PDF

    14069UG

    Abstract: MC14069UBCPG 14069u MC14069UBC MC14069U
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P−channel and N−channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubpdip-14soic-1414069ug+7mc14069ubcpcd4069ubmc14069ub/dmc14069ubcpg14069umc14069ubcmc14069u PDF

    14541b

    Abstract: 14093b 14504B 14053b hef4026 mc140106 14052B 14051b 14584B 14050B
    Contextual Info: HC Portfolio Comparison PART # 14000B 14001B 14001UB 14002B 14006B 14007UB 14008B 14009UB 14010B 14011B 14011UB 14012B 14013B 14014B 14015B 14016B 14017B 14018B 14019B 14020B 14021B 14022B 14023B 14024B 14025B 14026B 14027B 14028B 14029B 14030B 14031B 14032B


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    14000b14001b14001ub14002b+1614006b14007ub14008b14009ub14010b14011b14541b14093b14504b14053bhef4026mc14010614052b14051b14584b14050b PDF

    14069U

    Abstract: MC14069UBCP CD4069UB MC14069U MC14069UB MC14069UBD MC14069UBDR2 MC14069UBDT
    Contextual Info: 14069UB Hex Inverter The 14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six


    Original
    mc14069ubcd4069ubmc14069ubcpr14525+6mc14069ub/d14069umc14069umc14069ubdmc14069ubdr2mc14069ubdt PDF

    logos 4012B

    Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
    Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX


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    tda1510tda1510alogos 4012b1lb553+8rauland ets-003silec semiconductorsmcp 78334057atransistor sr5274c9121tk55274s485 PDF