14 ON 363 Search Results

R5F21208JFP

Contextual Info: Icc vs Vcc Low-speed on-chip oscillator mode Prepared on : Sep. 14, 2007 * Xin clock off High-speed on-chip oscillator off 25 Low-speed on-chip oscillator on = 125kHz FMR47 = "1" R5F21208JFP Topr = 25 degrees C VCC 600 500 5.5V 413.9 251.1 170.1 129.4 109.0

TDC 310

Abstract: KAD5512P 500MSPS KAD5514P KAD5514P-12 KAD5514P-17 KAD5514P-21 KAD5514P-25 tc4-1w TC4-1W msl
Contextual Info: KAD5514P Data Sheet March 4, 2009 FN6804.1 14-Bit, 250/210/170/125MSPS ADC Features The KAD5514P is a family of low-power, high-performance 14-bit, analog-to-digital converters. Designed with Intersil’s proprietary FemtoCharge technology on a standard

Contextual Info: Dual 14-Bit, 250/200/125 MSPS JESD204B High Speed Serial Output ADC ISLA224S Features The ISLA224S is a series of low-power, high-performance, dual-channel 14-bit, analog-to-digital converters. Designed with FemtoCharge technology on a standard CMOS process,

821KD14J

Abstract: 391KD14 223 Varistor 104271k 271kd14 470KD14 511KD14-j 180kd14 511KD14 VARISTOR 390KD14
Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

471KD14

Abstract: 121KD14
Contextual Info: 14Φ SERIES DATA SHEET ZINC OXIDE VARISTOR – 14 Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 8V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no following-on current.

511KD14 VARISTOR

Abstract: 201KD14 varistor 502 m 431kd14 391KD14 151kd14
Contextual Info: 14Φ SERIES DATA SHEET METAL OXIDE VARISTOR – 14Φ SERIES FEATURE — — — — Wide operating voltage V1mA range from 18V to 1800V. Fast responding to transient over-voltage. Large absorbing transient energy capability. Low clamping ratio and no follow-on current.

ISLA214P50

Abstract: TC4-19G2 orp meter circuit ISLA214P50EVAL 500MSPS ISLA214P20 ISLA214P25 ISLA216P13 ISLA216P20 ISLA216P25
Contextual Info: 14-Bit, 500MSPS ADC ISLA214P50 Features The ISLA214P50 is a 14-bit, 500MSPS analog-to-digital converter designed with Intersil’s proprietary FemtoCharge technology on a standard CMOS process. The ISLA214P50 is part of a pin-compatible portfolio of 12 to 16-bit A/Ds with maximum

Contextual Info: 14-Bit, 500/350 MSPS JESD204B High Speed Serial Output ADC ISLA214S50 Features The ISLA214S50 is a series of low-power, high-performance, 14-bit, analog-to-digital converters. Designed with FemtoCharge technology on a standard CMOS process, the series supports sampling rates of up to 500MSPS. The

Contextual Info: Preliminary Datasheet RJK0657DPA R07DS0343EJ0100 Rev.1.00 Apr 06, 2011 Silicon N Channel Power MOS FET Power Switching Features •    High speed switching Low drive current High density mounting Low on-resistance RDS on = 14 m typ. (at VGS = 10 V)

Contextual Info: Preliminary Datasheet RJK5030DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0227EJ0100 Rev.1.00 Dec 14, 2010 Features • Low on-state resistance RDS on = 1.3  typ. (at ID = 2 A, VGS = 10 V, Ta = 25C)  High speed switching Outline

Contextual Info: Preliminary Datasheet RJK4006DPP-M0 Silicon N Channel MOS FET High Speed Power Switching R07DS0228EJ0100 Rev.1.00 Dec 14, 2010 Features • Low on-resistance RDS on = 0.69  typ. (ID = 4 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching

Contextual Info: Preliminary Datasheet RJL5012DPE R07DS0435EJ0200 Previous: REJ03G1745-0100 Rev.2.00 Jun 14, 2011 Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode  Low on-resistance RDS(on) = 0.56  typ. (at ID = 6 A, VGS = 10 V, Ta = 25 C)

Contextual Info: Preliminary Datasheet RJK1209JPE 120V - 80A - N Channel Power MOS FET High Speed Power Switching R07DS0691EJ0100 Rev.1.00 Mar 08, 2012 Features • • • • For Automotive application AEC-Q101 compliant Low on-resistance : RDS on = 14 mΩ typ. Low input capacitance: Ciss = 4600 pF typ

Contextual Info: Preliminary Data Sheet NP28N10SDE R07DS0507EJ0100 Rev.1.00 Sep 16, 2011 MOS FIELD EFFECT TRANSISTOR Description The NP28N10SDE is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on 1 = 52 mΩ MAX. (VGS = 10 V, ID = 14 A)

Contextual Info: Preliminary Data Sheet NP33N06YDG R07DS0015EJ0100 Rev.1.00 Jul 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The NP33N06YDG is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS on = 14 mΩ MAX. (VGS = 10 V, ID = 16.5 A)

Contextual Info: Preliminary Datasheet RJL5013DPP-E0 500 V - 14 A - MOS FET High Speed Power Switching R07DS1121EJ0100 Rev.1.00 Sep 20, 2013 Features • Built-in fast recovery diode • Low on-resistance RDS on = 0.42 Ω typ. (at ID = 7 A, VGS = 10 V, Ta = 25°C) • Low leakage current

ELKA ELST 4012 PG9

Abstract: 933 325-021 933 175-100 276-041 led 276-041 4412 LED 5m transistor c 933 elwika 4012 pg7 p933
Contextual Info: E Series M12 IEC 60947-5-2 Cable sockets and plugs with molded-on lead 12 14.5 M 12 12 l 9.7 10.4 36.5 47 14 Ø 4.5 27.5 Ø 4.5 14 38.2 1.2 12.5 l 9.7 10.4 7.2 12.5 Ø 4.5 Ø 15 1.2 26.5 7.2 15.5 Ø 4.5 M 12 Ø 14.5 15.5 M 12 48.6 M 12 l Ø 14.5 l ELKA-KV…

Contextual Info: MKF NON RESETTABLE FUSES Surface Mount Fuse, 7 x 2.54 mm UL 248-14 • 125 VAC · 125 VDC · Quick-Acting F Description Applications - High Breaking Capacity - Directly solderable on printed circuit boards - Telecom - Industrial electronic - Household appliances

Contextual Info: INDEX BY TYPES | INDEX BY ORDER NUMBERS NON RESETTABLE FUSES MKF UL 248-14 • 125 VAC/DC · Quick-Acting F Describtion References - High Breaking Capacity - Directly solderable on printed circuit boards General Product Information Time-Current Curves see last page

ICS98ULPA877A

Abstract: ICSSSTUAF32866C IDTCSPUA877A
Contextual Info: DATASHEET ICSSSTUAF32866C 25-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2 Description design of the ICSSSTUAF32866C must ensure that the outputs will remain low, thus ensuring no glitches on the output. This 25-bit 1:1 or 14-bit 1:2 configurable registered buffer is

7120

Abstract: ICS98UAE877A IDT74SSTUAE32866A Q11A
Contextual Info: DATASHEET IDT74SSTUAE32866A 25-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2 Description outputs will remain low, thus ensuring no glitches on the output. This 25-bit 1:1 or 14-bit 1:2 configurable registered buffer is designed for 1.425V to 1.575V VDD operation.

ICS98ULPA877A

Abstract: IDT74SSTUBF32866B IDTCSPUA877A Q11A
Contextual Info: DATASHEET 25-BIT CONFIGURABLE REGISTERED BUFFER FOR DDR2 Description CONFIDENTIAL IDT74SSTUBF32866B design of the IDT74SSTUBF32866B must ensure that the outputs will remain low, thus ensuring no glitches on the output. This 25-bit 1:1 or 14-bit 1:2 configurable registered buffer is

Marconi 2030 service manual

Abstract: marconi 2030 operating manual marconi 2030 unlocking utility code marconi 2051 C3198 transistor Marconi 2050 service manual Marconi 2032 service manual c3198 rohde UPA audio analyzer rohde Schwarz UPA3
Contextual Info: DIGITAL & VECTOR SIGNAL GENERATOR 2050T SERIES Operating Manual Document part no. 46892/296 Issue 14 15 May 2007 DIGITAL & VECTOR SIGNAL GENERATORS 2050T SERIES 2050T 10 kHz to 1.35 GHz 2051T 10 kHz to 2.7 GHz 2052T 10 kHz to 5.4 GHz Includes information on: